TPWR8503NL
Toshiba Electronics Europe
Toshiba N-Channel MOSFET, 300 A, 30 V, 8-Pin DSOP TPWR8503NL, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 1.3 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.3V, Minimum Gate Threshold Voltage: 1.3V, Maximum Power Dissipation: 142 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±20 V, Forward Diode Voltage: 1.2V
$1.01 - $1.70Distributors
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Technical Specifications
| ROHS Compliance | Not Compliant |


