The ADP8860SHIELD-EVALZ and the ADP8861SHIELD-EVALZ incorporate light emitting diodes (LEDs) for quick and easy evaluation of the ADP8860 and the ADP8861. Note that only the ADP8860SHIELD-EVALZ has dual light intensity sensors. The ADP8860SHIELD-EVALZ and the ADP8861SHIELD-EVALZ follow the form factor of a regular Arduino® shield to allow compatibility with microcontroller boards that use the same interface. These evaluation boards also incorporate a separate header dedicated to I2C communications. The ADP8860 and the ADP8861 are 7-channel LED drivers that utilizes a charge pump with selective gain for maximum efficiency. The LEDs driven by either device are programmable for maximum current and fade in and out times via the I2C interface. Only the ADP8860 has a programable light intensity threshold that can be set via the I2C interface of the device. Each channel can handle up to 30 mA (typical), except for the seventh channel, which can handle 60 mA (typical). Each channel can be unified to have the same fade in time and fade out time, or each channel can have an individual fade in time and fade out time for greater flexibility. For full details on the ADP8860 and the ADP8861, see the ADP8860 and the ADP8861 data sheets, which should be consulted in conjunction with the user guide when using these evaluation boards.

The ADPA1105 is a gallium nitride (GaN), broadband power amplifier that delivers 46 dBm (40 W) with 60% typical power added efficiency (PAE) across a bandwidth of 0.9 GHz to 1.4 GHz. The ADPA1105 provides ?0.5 dB gain flatness across a bandwidth of 0.9 GHz to 1.4 GHz. The ADPA1105 is ideal for pulsed applications such as wireless infrastructure, radar, public mobile radio, and general-purpose amplifications. The ADPA1105 comes in a 32-lead, lead frame chip scale package, premolded cavity (LFCSP_CAV).APPLICATIONSWeather radarMarine radarMilitary radar

The ADPA1107 is a gallium nitride (GaN), broadband power amplifier, delivering 45.0 dBm (35 W) with 56.5% typical power added efficiency (PAE) across a bandwidth of 4.8 GHz to 6.0 GHz. The ADPA1107 provides ?0.5 dB gain flatness from 5.4 GHz to 6.0 GHz.The ADPA1107 is ideal for pulsed applications such as radar, public mobile radio, and general-purpose amplification.The ADPA1107 is housed in a 40-lead, 6 mm ? 6 mm, lead frame chip scale package (LFCSP).APPLICATIONSWeather radarsMarine radarsMilitary radars

ADPA7005AEHZThe ADPA7005 is a gallium arsenide (GaAs), pseudomorphic high electron mobility transfer (pHEMT), monolithic microwave integrated circuit (MMIC), 32 dBm saturated output power (PSAT), >1 W, power amplifier, with an integrated temperature compensated, on-chip power detector that operates between 18 GHz and 44 GHz. The ADPA7005 provides 15.5 dB of small signal gain and approximately 32 dBm of PSAT at 32 GHz from a 5 V supply (see Figure 26 in the data sheet). The ADPA7005 has an output IP3 of 40 dBm between 24 GHz to 34 GHz and is ideal for linear applications such as electronic countermeasure and instrumentation applications requiring >30 dBm of efficient PSAT. The RF input and outputs are internally matched and dc blocked for ease of integration into higher level assemblies. The ADPA7005 is packaged in a 7 mm ? 7 mm, 18?terminal ceramic leadless chip carrier with heat sink (LCC_HS) that exhibits low thermal resistance and is compatible with surface-mount manufacturing techniques.ADPA7005CHIPThe ADPA7005CHIP is a gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT), monolithic microwave integrated circuit (MMIC), distributed power amplifier that operates from 20 GHz to 44 GHz. The amplifier provides 17 dB of small signal gain, 31 dBm output power for 1 dB compression (P1dB), and a typical output third-order intercept (IP3) of 41 dBm. The ADPA7005CHIP requires 1200 mA from a 5 V supply on the supply voltage (VDD) and features inputs and outputs that are internally matched to 50 ?, facilitating integration into multichip modules (MCMs). All data is taken with the chip connected via two 0.025 mm wire bonds that are at least 0.31 mm long.Applications Military and space Test instrumentation Communications

The ADRF5045 is a general-purpose, single-pole, four-throw (SP4T) switch manufactured using a silicon process. It comes in a 24-terminal land grid array (LGA) package and provides high isolation and low insertion loss from 9 kHz to 30 GHz.This broadband switch requires dual supply voltages, +3.3 V and ?3.3 V, and provides complementary metal-oxide semiconductor (CMOS)/low voltage transistor-transistor logic (LVTTL) logiccompatible control.Applications Test instrumentation Microwave radios and very small aperture terminals (VSATs) Military radios, radars, and electronic counter measures (ECMs) Broadband telecommunications systems

The ADRF5047 is a reflective, single-pole, four-throw (SP4T) switch manufactured in the silicon process.The ADRF5047 operates from 9 kHz to 44 GHz with an insertion loss of lower than 2.7 dB and an isolation of higher than 31 dB. The device has a radio frequency (RF) input power handling capability of 26.5 dBm for both through path and hot switching.The ADRF5047 draws a low current of 3 ?A on the positive supply of +3.3 V, and ?110 ?A on the negative supply of ?3.3 V. The device provides complementary metal-oxide semiconductor (CMOS)-/low voltage transistor-transistor logic (LVTTL)-compatible controls.The ADRF5047 is pin-compatible with the ADRF5046 fast switching version, which operates from 100 MHz to 44 GHz.The ADRF5047 comes in a 20-terminal, 3 mm ? 3 mm, RoHS-compliant, land grid array (LGA) package and operates from ?40?C to +105?C.Applications Industrial scanner Test instrumentation Cellular infrastructure?mmWave 5G Military radios, radars, and electronic counter measures (ECMs) Microwave radios and very small aperture terminals (VSATs)

The ADRF5141 is a reflective, single pole double-throw (SPDT) switch manufactured in the silicon process. It is used in transmit-receive (T/R) applications with an integrated power limiter at the receive side. The ADRF5141 operates from 8 GHz to 12 GHz. The RX arm with the integrated power limiter has a limiting capability of 18 dBm output power (TBC) with a low insertion loss of 1.3 dB at 10 GHz while the TX arm has an insertion loss of 0.9 dB at 10 GHz. The ADRF5141 draws a low current of 13 ?A on the positive supply of +3.3 V and 360 ?A on negative supply of ?3.3 V. The device employs complementary metal-oxide semiconductor (CMOS)-/low voltage transistor to transistor logic (LVTTL)-compatible controls. The ADRF5141 requires no additional driver circuitry, making it an ideal alternative to GaN and PIN diode-based switches. The ADRF5141 comes in a 20-lead, 3.0 mm ? 3.0 mm, RoHS-compliant, land grid array (LGA) package and can operate from ?40?C to +85?.APPLICATIONSElectronic warfareMilitary radios, radars, and electronic counter measuresGaN and PIN diode replacement

The ADRF5250 is a general-purpose, single-pole, five-throw (SP5T), nonreflective switch manufactured using a silicon process. The ADRF5250 is available in a 4 mm ? 4 mm, 24-lead lead frame chip scale package (LFCSP) and provides high isolation and low insertion loss from 100 MHz to 6 GHz.The ADRF5250 incorporates a negative voltage generator to operate with a single positive supply voltage from 3.3 V to 5 V applied to the VDD pin when the VSS pin is connected to ground. The negative voltage generator can be disabled when an external negative supply voltage of ?3.3 V is applied to the VSS pin. The ADRF5250 provides a 1.8 V logic-compatible, 3-pin control interface.Applications Cellular/4G infrastructure Wireless infrastructure Mobile radios Test equipment

The ADRF5300 is a reflective, SPDT switch manufactured in the silicon process.The ADRF5300 is developed for 5G applications ranging from 24 GHz to 32 GHz. The ADRF5300 has a low insertion loss of 1.1 dB, a high isolation of 38 dB, and an RF input power handling capability of 28 dBm average and 36 dBm peak.The ADRF5300 incorporates a negative voltage generator (NVG) to operate with a single positive supply of 3.3 V (VDD) applied to the VDD pin. The device employs CMOS- and low voltage transistor to transistor logic (LVTTL)-compatible controls.The ADRF5300 is packaged in a 20-terminal, 3 mm ? 3 mm, RoHS-compliant, land grid array (LGA) package and can operate from ?40?C to +105?C.APPLICATIONSIndustrial scannerTest instrumentationCellular infrastructure: 5G millimeter waveMilitary radios, radars, electronic counter measures (ECMs)Microwave radios and very small aperture terminals (VSATs)

The ADRF5345 is a high linearity, reflective, single-pole, four-throw (SP4T) switch manufactured in the silicon process.The ADRF5345 operates from 1.8 GHz to 3.8 GHz with a typical insertion loss lower than 0.40 dB and a typical input IP3 of 84 dBm. The device has an RF input power handling capability of 39 dBm for continuous wave signals and 39 dBm average and 49 dBm peak for long-term evolution (LTE) signals.The ADRF5345 incorporates an integrated negative voltage generator (NVG) to operate with a single positive supply of 5 V (VDD) applied to the VDD pin drawing a 2 mA supply current. The device employs low voltage complementary metal-oxide semiconductor (LVCMOS)-/low voltage transistor to transistor logic (LVTTL)- compatible controls.The ADRF5345 comes in a 4 mm ? 4 mm, 22-terminal, RoHS-compliant, land grid array (LGA) package and operates between ?40?C to +105?C.APPLICATIONS5G antenna tiltingWireless infrastructureMilitary and high reliability applicationsTest equipmentPin diode replacement