The HMC311LP3(E) is a GaAs InGaP Heterojunction Bipolar Transistor (HBT) Gain Block MMIC SMT DC to 6 GHz amplifiers. This 3 ? 3mm QFN packaged amplifier can be used as either a cascadable 50 ? gain stage or to drive the LO of HMC mixers with up to +17 dBm output power. The HMC311LP3(E) offers 14.5 dB of gain and an output IP3 of +32 dBm while requiring only 56 mA from a +5V supply. The Darlington feedback pair used results in reduced sensitivity to normal process variations and yields excellent gain stability over temperature while requiring a minimal number of external bias components.Applications Cellular / PCS / 3G Fixed Wireless & WLAN CATV & Cable Modem Microwave Radio

The HMC441LM1 is a broadband 7 to 15.5 GHz GaAs PHEMT MMIC Medium Power Amplifier in an SMT leadless chip carrier package. The amplifier provides 15 dB of gain, 21.5 dBm of saturated power at 27% PAE from a +5V supply voltage. An optional gate bias is provided to allow adjustment of gain, RF output power, and DC power dissipation. This 50 Ohm matched amplifier does not require any external components making it an ideal linear gain block or driver for HMC SMT mixers.Applications Point-to-Point Radios Point-to-Multi-Point Radios VSAT LO Driver for HMC Mixers Military EW & ECM

The HMC375LP3(E) is a high dynamic range GaAs PHEMT MMIC Low Noise Amplifier are ideal for GSM & CDMA cellular basestation front- end receivers operating between 1.7 and 2.2 GHz. This LNA has been optimized to provide 0.9 dB noise figure, 17 dB gain and +33 dBm output IP3 from a single supply of +5V @ 136mA. Input and output return losses are 14 dB typical with the LNA requiring minimal external components to optimize the RF input match, RF ground and DC bias.Applications GSM, GPRS & EDGE CDMA & W-CDMA DECT

The HMC447LC3 is a low noise Divide-by-4 Regenerative Divider utilizing InGaP GaAs HBT technology. This wideband divider operates with input frequencies from 10 to 26 GHz, and accepts a very wide range of input power levels. THe HMC447LC3 exhibits a very low SSB Phase Noise of -150 dBc/Hz at 100 kHz offset, making it ideal for use in high frequency Phase Locked Loops (PLL), and in Local Oscillator (LO) distribution applications where fundamental and divided LO frequencies are required within a system.This versatile divider consumes only 96 mA from a single positive supply of +5V, and delivers very flat output power across the rated bandwidth. The HMC447LC3 is housed in a RoHS compliant, 3x3 mm leadless SMT package with an exposed ground paddle.APPLICATIONS Point-to-Point/Multi-Point Radios? VSAT Radios? Fiber Optic? Test Equipment? Military

The HMC870LC5 is a GaAs MMIC pHEMT Distributed Driver Amplifier packaged in a leadless 5x5 mm surface mount package which operates between DC and 20 GHz. The amplifier provides 17 dB of gain, 8Vp-p saturated output swing and features output swing cross point adjustment. Gain flatness is excellent at ?0.5 dB as well as very low additive RMS jitter of 300 fs for 10 Gbps operation.The HMC870LC5 provides Metro and Long Haul designers with scalable power dissipation for varying output drive requirements. (<0.4W at VOUT = 3.6VP-P and <1W at VOUT = 8.5VP-P) The HMC870LC5 has a very wide supply (VDD) operating range from +3.3V to +7V, and the RF I/Os are internally matched to 50 Ohms.APPLICATIONS 10 Gbps NRZ MZ &?Low V Modulator Driver 10 Gbps RZ Transmission 40 Gbps DQPSK Broadband Gain Block for?Test & Measurement Equipment Military & Space

The HMC409LP4(E) is a high efficiency GaAs InGaP HBT MMIC Power amplifier operating from 3.3 to 3.8 GHz. The amplifier is packaged in a low cost, leadless SMT package. Utilizing a minimum of external components the amplifier provides 31 dB of gain and +32.5 dBm of saturated power from a +5V supply voltage. The power control (Vpd) can be used for full power down or RF output power/current control. For +22 dBm OFDM output power (64 QAM, 54 Mbps), the HMC409LP4(E) achieves an error vector magnitude (EVM) of 2%, meeting WiMAX 802.16 linearity requirements.Applications WiMAX 802.16 Fixed Wireless Access Wireless Local Loop

The HMC510LP5(E) is a GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCO. The HMC510LP5(E) integrates resonators, negative resistance devices, varactor diodes and feature half frequency and divide-by-4 outputs. The VCO?s phase noise performance is excellent over temperature, shock, and process due to the oscillator?s monolithic structure. Power output is +13 dBm typical from a +5V supply voltage. The prescaler and RF/2 functions can be disabled to conserve current if not required. The voltage controlled oscillator is packaged in a leadless QFN 5?5 mm surface mount package, and requires no external matching components.APPLICATIONS Point-to-Point/Multi-Point Radio? Test Equipment & Industrial Controls? SATCOM? Military End-Use

The HMC512LP5(E) is a GaAs InGaP Herterojunction Bipolar Transistor (HBT) MMIC VCOs. The HMC512LP5(E) integrates resonators, negative resistance devices, varactor diodes and feature half frequency and divide-by-4 outputs. The VCO's phase noise performance is excellent over temperature, shock and process due to the oscillator's monolithic structure. Power output is +9 dBm typical from a +5V supply voltage. The prescaler and RF/2 functions can be disabled to conserve current if not required. The voltage cont-rolled oscillator is packaged in a leadless QFN 5x5 mm surface mount package, and requires no external matching components.APPLICATIONS Point-to-Point Radios? Point-to-Multi-Point Radios Test Equipment & Industrial Controls? SATCOM Military End-Use

The HMC584LP5(E) is a GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCO. The HMC584LP5(E) integrates resonators, negative resistance devices, varactor diodes and feature half frequency and divide-by-4 outputs. The VCO?s phase noise performance is excellent over temperature, shock, and process due to the oscillator?s monolithic structure. Power output is +10 dBm typical from a +5V supply voltage. The prescaler and RF/2 functions can be disabled to conserve current if not required. The voltage controlled oscillator is packaged in a leadless QFN 5x5 mm surface mount package, and requires no external matching components.APPLICATIONS Point to Point/Multipoint Radio Test Equipment & Industrial Controls SATCOM Military End-Use

The HMC376LP3 & HMC376LP3E are GaAs PHEMT MMIC Low Noise Amplifiers that are ideal for GSM & CDMA cellular basestation front-end receivers operating between 700 and 1000 MHz. The amplifier has been optimized to provide 0.7 dB noise figure, 15 dB gain and +36 dBm output IP3 from a single supply of +5V. The HMC376LP3(E) feature an externally adjustable supply current which allows the designer to tailor the linearity performance of the LNA for each application. For applications which require improved noise figure, please see the HMC617LP3(E).Applications Cellular/3G Infrastructure Base Stations & Repeaters CDMA, W-CDMA, & TD-SCDMA Private Land Mobile Radio GSM/GPRS & EDGE UHF Reallocation Applications