The HMC6380LC4B is a wideband MMIC VoltageControlled Oscillator which incorporates the resonator,negative resistance device, and varactor diode. Outputpower and phase noise performance are excellentover temperature due to the oscillator?s monolithicconstruction. The Vtune port accepts an analog tuningvoltage from 0 to +23V. The HMC6380LC4B VCOoperates from a single +5V supply, consumes only75 mA of current, and is housed in a RoHS compliantSMT package. This wideband VCO uniquely combinesthe attributes of ultra small size, low phase noise, lowpower consumption, and wide tuning range.Applications Industrial/Medical EquipmentMeasurement EquipmentSatcomMilitary Radar, EW, & ECM

The HMC453QS16G(E) is a high dynamic range GaAs InGaP Heterojunction Bipolar Transistor (HBT) 1.6 watt MMIC power amplifier operating between 0.4 and 2.2 GHz. Packaged in a miniature 16 lead QSOP plastic package, the amplifier gain is typically 21.5 dB at 0.4 GHz and 8 dB at 2.1 GHz. Utilizing a minimum number of external components and a single +5V supply, the amplifier output IP3 can be optimized to +47 dBm at 0.4 GHz or +51 dBm at 2.1 GHz. The power control (VPD) can be used for full power down or RF output power/current control. The high output IP3 and PAE make the HMC453QS16G(E) ideal power amplifier for Cellular/ PCS/3G, WLL, ISM and Fixed Wireless applications.Applications GSM, GPRS & EDGE? CDMA & W-CDMA? CATV/Cable Modem? Fixed Wireless & WLL

The HMC534LP5(E) is a GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCO. The HMC534LP5(E) integrates resonators, negative resistance devices, varactor diodes and feature half frequency and divide-by-4 outputs. The VCO?s phase noise performance is excellent over temperature, shock, and process due to the oscillator?s monolithic structure. Power output is +11 dBm typical from a +5V supply voltage. The prescaler and RF/2 functions can be disabled to conserve current if not required. The voltage controlled oscillator is packaged in a leadless QFN 5x5 mm surface mount package, and requires no external matching components.APPLICATIONS Point-to-Point/Multi-point Radio Test Equipment & Industrial Controls SATCOM Military End-Use

The HMC632LP5(E) is a GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCO. The HMC632LP5(E) integrates resonators, negative resistance devices, varactor diodes and features half frequency and divide-by-4 outputs. The VCO?s phase noise performance is excellent over temperature, shock, and process due to the oscillator?s monolithic structure. Power output is +9 dBm typical from a +5V supply voltage. The prescaler and RF/2 functions can be disabled to conserve current if not required. The voltage controlled oscillator is packaged in a leadless QFN 5x5 mm surface mount package, and requires no external matching components.APPLICATIONS Point to Point/Multipoint Radio Test Equipment & Industrial Controls SATCOM Military End-Use

The HMC734 is a GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCO. The HMC734 integrates a resonator, negative resistance device, varactor diode and features a divide-by-4 frequency output. The VCO's phase noise performance is excellent over temperature, shock, and process due to the oscillator's monolithic structure. Power output is +18 dBm typical from a +5V supply voltage. The prescaler function can be disabled to conserve current if not required. The voltage controlled oscillator is packaged in a leadless QFN 5?5 mm surface mount package, and requires no external matching components.APPLICATIONS Point-to-Multi-Point Radios Test Equipment & Industrial Controls SATCOM Military End-Use

The HMC738 is a GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCO. The HMC738 integrates a resonator, negative resistance device, varactor diode and divide-by-16 prescaler. The VCOs phase noise performance is excellent over temperature, shock, and process due to the oscillator's monolithic structure. Power output is +9 dBm typical from a 5V supply voltage. The voltage controlled oscillator is packaged in a low cost leadless QFN 4x4 mm surface mount package.APPLICATIONS Point-to-Point Radios Point-to-Multi-Point Radios/LMDS VSAT

The HMC3653LP 3BE is a HBT Gain Block MMI Camplifier covering 7 GHz to 15 GHz and packagedin a 3x3 mm plastic QFN SM T package. This versatileamplifier can be used as a cascadable IF or RF gainstage in 50 Ohm applications. The HMC3653LP 3BEdelivers 15 dB gain, and +15 dBm output P1dB withonly 4 dB noise figure.Applications Point-to-Point Radios Point-to-Multipoint Radios VSAT LO Driver for HMC Mixers Military EW & ECM

The HMC542BLP4E is a broadband 6-bit GaAs IC digital attenuator with a CMOS compatible serial to parallel driver in low cost leadless surface mount package. This serial control digital attenuator incorporates off chip AC ground capacitors for near DC operation, making it suitable for a wide variety of RF and IF applications. Covering DC to 4 GHz, the insertion loss is 1.7 dB and the attenuator bit values are 0.5 (LSB), 1, 2, 4, 8, and 16 dB for a total attenuation of 31.5 dB. Attenuation accuracy is excellent at ?0.25 dB typical step error with an IIP3 of +50 dBm. Six bit serial control words are used to select each attenuation state. A single VCC bias of +5V is required.APPLICATIONS Cellular/PCS/3G Infrastructure ISM, MMDS, WLAN, WiMAX, & WiBro Microwave Radio & VSAT Test Equipment and Sensors

The HMC311SC70(E) is a GaAs InGaP Heterojunction Bipolar Transistor (HBT) Gain Block MMIC SMT DC to 8 GHz amplifier. Packaged in an industry standard SC70, the amplifier can be used as either a cascadable 50 Ohm gain stage or to drive the LO port of HMC mixers with up to +15 dBm output power. The HMC311SC70(E) offers 15 dB of gain and an output IP3 of +30 dBm while requiring only 54 mA from a +5V supply. The Darlington topology results in reduced sensitivity to normal process variations, and yields excellent gain stability over temperature while requiring a minimal number of external bias components.Applications Cellular / PCS / 3G WiBro / WiMAX / 4G Fixed Wireless & WLAN CATV, Cable Modem & DBS Microwave Radio & Test Equipment

The HMC646LP2(E) is an SPDT switch in a leadless DFN surface mount plastic package for use in transmit / receive and LNA protection applications which require very low distortion and high power handling of up to 40 watts with less than 10% duty cycle. This robust switch can control signals from 100 - 2100 MHz* and is ideal for TD-SCDMA / 3G repeaters, PMR, automotive telematics, and satellite subscriber terminal applications. The design provides exceptional P0.1 dB of +46 dBm and +74 dBm IIP3 on the Transmit (Tx) port. The failsafe topology provides a low loss path from Tx to RFC, when no DC power is available.APPLICATIONS LNA Protection & T/R Switching TD-SCDMA / 3G Infrastructure Satellite Subscriber Terminals Private Mobile Radio & Public Safety Handsets Automotive Telematics