The HMC784AMS8GE is a high power SPDT switch inan 8-lead MSOPG package for use in transmit-receiveapplications which require very low distortion athigh input signal power levels. The device can controlsignals from DC to 4 GHz. The design providesexceptional intermodulation performance; > +60 dBmthird order intercept at +5V bias. RF1 and RF2 arereflective shorts when ?OFF?. On-chip circuitry allowssingle positive supply operation from +3 Vdc to +8 Vdcat very low DC current with control inputs compatiblewith CMOS logic families.Applications Cellular/4G Infrastructure WiMAX, WiBro & Fixed Wireless Automotive Telematics Mobile Radio Test Equipment

The HMC798ALC4 is a 24 GHz to 34 GHz subharmonically pumped (?2) MMIC mixer with an integrated LO amplifier housed in a leadless, RoHS compliant LCC package. The HMC798ALC4 can be used as an upconverter or downconverter between 24 GHz and 34 GHz. The 2 ? LO to radio frequency (RF) isolation is typically 30 dB in a 24 GHz to 30 GHz frequency range and 36 dB in a 30 GHz to 34 GHz frequency range, eliminating the need for additional filtering. The LO amplifier is single bias at a 5 V dc with a typical 4 dBm LO drive level requirement The HMC798ALC4 eliminates the need for wire bonding, allowing use of surface-mount technology (SMT) manufacturing techniques.Applications Microwave and very small aperture terminal (VSAT) radios Test equipment Point to point radios Satellite communications (SATCOM) Military electronic warfare (EW), electronic countermeasure (ECM), and command, control, communications and intelligence (C3I)

The HMC812ALC4 is an absorptive Voltage Variable Attenuator (VVA) which operates from 5 - 30 GHz and is ideal in designs where an analog DC control signal must be used to control RF signal levels over a 30 dB amplitude range. It features two shunt-type attenuators which are controlled by two analog voltages, Vctrl1 and Vctrl2. Optimum linearity performance of the attenuator is achieved by first varying Vctrl1 of the 1st attenuation stage from -5V to 0V with Vctrl2 fixed at -5V. The control voltage of the 2nd attenuation stage, Vctrl2, should then be varied from -5V to 0V, with Vctrl1 fixed at 0V. The HMC812ALC4 is housed in a RoHS compliant 4x4 mm QFN leadless ceramic package.Furthermore, if the Vctrl1 and Vctrl2 pins are connected together it is possible to achieve the full analog attenuation range with only a small degradation in input IP3 performance. Applications include AGC circuits and temperature compensation of multiple gain stages in microwave point-to-point and VSAT radios.Applications Point-to-Point Radio VSAT Radio Test Instrumentation Microwave Sensors Military, ECM & Radar

The HMC815B is a compact gallium arsenide (GaAs),pseudomorphic high electron mobility transistor (pHEMT),monolithic microwave integrated circuit (MMIC) upconverterin a RoHS compliant package that operates from 21 GHz to27 GHz. This device provides a small signal conversion gain of12 dB and a sideband rejection of 20 dBc. The HMC815Butilizes a driver amplifier proceeded by an in phase/quadrature(I/Q) mixer where the LO is driven by an active 2? multiplier.IF1 and IF2 mixer inputs are provided, and an external 90?hybrid is needed to select the required sideband. The I/Q mixertopology reduces the need for filtering of unwanted sideband.The HMC815B is a smaller alternative to hybrid style singlesideband (SSB) downconverter assemblies, and it eliminates theneed for wire bonding by allowing the use of surface-mountmanufacturing techniques.The HMC815B is available in 4.90 mm ? 4.90 mm, 32-terminalceramic LCC package and operates over the ?40?C to +85?Ctemperature range. An evaluation board for the HMC815B isalso available upon request.Applications Point to point and point to multipoint radios Military radars, electronic warfare, and electronic intelligence Satellite communications Sensors

The HMC8410 is a gallium arsenide (GaAs), monolithic microwave integrated circuit (MMIC), pseudomorphic high electron mobility transistor (pHEMT), low noise wideband amplifier that operates from 0.01 GHz to 10 GHz. The HMC8410 provides a typical gain of 19.5 dB, a 1.1 dB typical noise figure, and a typical output IP3 of 33 dBm, requiring only 65 mA from a 5 V supply voltage. The saturated output power (PSAT) of up to 22.5 dBm enables the low noise amplifier (LNA) to function as a local oscillator (LO) driver for many of Analog Devices, Inc., balanced, I/Q or image rejection mixers.The HMC8410 also features inputs/outputs (I/Os) that are internally matched to 50 ?, making it ideal for surface-mounted technology (SMT)-based, high capacity microwave radio applications.The HMC8410 is housed in a RoHS-compliant, 2 mm ? 2 mm, LFCSP package.Multifunction pin names can be referenced by their relevant function only.APPLICATIONS Software defined radios Electronics warfare Radar applications

The HMC849ALP4CE is a high isolation non-reflective DC to 6 GHz GaAs pHEMT SPDT switch in a low cost leadless surface mount package. The switch is ideal for cellular/WiMAX/4G Infrastructure applications yielding up to 60 dB isolation, low 0.8 dB insertion loss and +52 dBm input IP3. Power handling is excellent up through the 5 - 6 GHz WiMAX band with the switch offering a P1dB compression point of +31 dBm. On-chip circuitry allows a single positive voltage control of 0/+3V or 0/+5V at very low DC currents. An enable input (EN) set to logic high will put the switch in an 'all off' state.APPLICATIONS Cellular/4G Infrastructure WiMAX, WiBro & Fixed Wireless Automotive Telematics Mobile Radio Test Equipment

The HMC891ALP5E is a monolithic microwave integrated circuit (MMIC) band-pass filter that features a user-selectablepass band frequency. The 3 dB filter bandwidth is approximately 9% and the 20 dB filter bandwidth is approximately 23%. Thecenter frequency (fCENTER) can be varied between 1.95 GHz and 3.4 GHz by applying an analog tune voltage between 0 V and 14 V.This tunable filter can be used as a smaller alternative to physically large switched filter banks and cavity tuned filters.The HMC891ALP5E has excellent microphonics due to the monolithic design, and provides a dynamically adjustablesolution in advanced communications applications.ApplicationsTesting and measurement equipmentMilitary radar and electronic warfare/electronic counter measure (ECM)Satellite communication and spaceIndustrial and medical equipment

Reaching speeds of up to 1 GHz, the ADSP-2159x processors are members of the SHARC? family of products. The ADSP-2159x processor is a dual-SHARC+? core DSP that doubles the audio performance of its single-SHARC+ core ADSP-2156x predecessor while maintaining pin-compatibility to it in the BGA package, providing design scalability from 400 MHz (ADSP-21566) to 2 GHz (ADSP-21593).The ADSP-2159x SHARC processors are members of the SIMD SHARC family of digital signal processors (DSPs) that feature Analog Devices, Inc., Super Harvard Architecture. These 32-bit/40-bit/64-bit floating-point processors are optimized for high performance audio/floating-point applications with large on-chip static random-access memory (SRAM), multiple internal buses that eliminate input/output (I/O) bottlenecks, and innovative digital audio interfaces (DAI). New additions to the SHARC+ core include cache enhancements and branch prediction, while maintaining instruction set compatibility to previous SHARC products.By integrating a rich set of industry-leading system peripherals and memory (see Table 1 in the data sheet), the SHARC+ processor is the platform of choice for applications that require programmability similar to reduced instruction set computing (RISC), multimedia support, and leading edge signal processing in one integrated package. These applications span a wide array of markets, including automotive, professional audio, and industrial-based applications that require high floating-point performance.APPLICATIONS Automotive: audio amplifier, head unit, ANC/RNC, rear seat entertainment, digital cockpit, ADAS Consumer & Professional Audio: speakers, sound bars, AVRs, conferencing systems, mixing consoles, microphone arrays, headphones

The HMC1122 is a 6-bit digital attenuator operating from 0.1 GHz to 6 GHz with a 31.5 dB attenuation control range in 0.5 dB steps.The HMC1122 is implemented in a silicon process, offering very fast settling time, low power consumption, and high ESD robustness. The device features safe state transitions and optimized for excellent step accuracy and high linearity over frequency and temperature range. The RF input and output are internally matched to 50 ? and do not require any external matching components. The design is bidirectional; therefore, the RF input and output are interchangeable.The HMC1122 operates on a single supply ranging from 3.3 V to 5 V with no performance change due to an on-chip regulator.The device incorporates a driver that provides both serial and parallel control of the attenuator. The device also features a user-selectable power-up state and a serial output port for cascading other serial controlled components.The HMC1122 comes in a RoHS compliant, compact, 4 mm ? 4 mm LFCSP package, and is pin compatible to the HMC624A.A fully populated evaluation board is available. Applications Cellular infrastructure Microwave radios and very small aperture terminals (VSATs) Test equipment and sensors IF and RF designs

The HMC618ALP3E is a GaAs pHEMT MMIC Low Noise Amplifier that is ideal for Cellular/3G and LTE/WiMAX/4G basestation front-end receivers operating between 1.2 - 2.2 GHz. The amplifier has been optimized to provide 0.75 dB noise figure, 19 dB gain and +36 dBm output IP3 from a single supply of +5V. Input and output return losses are excellent and the LNA requires minimal external matching and bias decoupling components. The HMC618ALP3E shares the same package and pinout with the HMC617LP3E 0.55 - 1.2 GHz LNA. The HMC618ALP3E can be biased with +3V to +5V and features an externally adjustable supply current which allows the designer to tailor the linearity performance of the LNA for each application. The HMC618ALP3E offers improved noise figure versus the previously released HMC375LP3(E) and the HMC382LP3(E).Applications Cellular/3G and LTE/WiMAX/4G BTS & Infrastructure Repeaters and Femto Cells Public Safety Radio