The HMC346ALP3E is an absorptive Voltage Variable Attenuator (VVA) in low cost leadless surface mount plastic package operating from DC - 14 GHz. It features an on-chip reference attenuator for use with an external op-amp to provide simple single voltage attenuation control, 0 to -5V. The device is ideal in designs where an analog DC control signal must control RF signal levels over a 30 dB amplitude range.Applications Basestation Infrastructure Fiber Optics & Broadband Telecom Microwave Radio & VSAT Military Radios, Radar, & ECM Test Instrumentation

The HMC392ALC4 is a GaAs MMIC Low NoiseAmplifier which operates between 3.5 and 8.0GHz. Housed in a leadless 4x4 mm SMT package,this amplifier provides 17 dB of gain, 1.8 dB noisefigure and 34.5 dBm IP3 from a +5V supply voltage.HMC392ALC4 functions well as a low noise front endor as a driver amplifier. The RF Input and Output pinsare DC blocked and matched to 50 Ohms for easeof use. The HMC392ALC4 allows the use of surfacemount manufacturing techniques and is suitablefor high reliability military, industrial and spaceapplications.Applications Point-to-point radios VSAT LO driver for HMC mixers Military EW, ECM, C3I Space

The HMC412BMS8GE is a passive double-balancedmixer that operates from 8 to 16 GHz. TheHMC412BMS8GE operates with LO drive levelsbetween 9 to 15 dBm and provides 8 dB of conversionloss across the entire specified frequency band. Thismixer requires no external components or bias.Applications Long Haul Radio Platforms Microwave Radio VSAT

The HMC424ALH5 is a broadband 6-bit GaAs MMIC digital attenuator housed in a hermetic SMT leadless package. Covering DC to 13 GHz, the insertion loss is less than 3.5 dB typical. The attenuator bit values are 0.5 (LSB), 1, 2, 4, 8, and 16 dB for a total attenuation of 31.5 dB. Attenuation accuracy is excellent at ?0.5 dB typical step error with an IIP3 of +34 dBm. Six control voltage inputs, toggled between 0 and -5V, are used to select each attenuation state. A single Vee bias of -5V allows operation at frequencies down to DC. The HMC424ALH5 is compatible with standard and lead free surface mount manufacturing techniques and is suitable for high reliability military, industrial and space applications.Applications Telecom Infrastructure Military Radio, Radar & ECM Space Systems Test Instrumentation

The HMC424ALP3E is a broadband, 6-bit, gallium arsenide (GaAs), digital attenuator in low cost, leadless surface-mount package with a 31.5 dB attenuation control range in 0.5 dB steps.The HMC424ALP3E offers excellent attenuation accuracy of ?(0.2 dB + 4% of attenuation state) and high input linearity with a typical insertion loss of less than 4 dB over the specified frequency range from 0.1 GHz to 13.0 GHz. The attenuator bit values are 0.5 dB (LSB), 1 dB, 2 dB, 4 dB, 8 dB, and 16 dB for a total attenuation of 31.5 dB with a ?0.5 dB typical step error.The device allows a user to program the attenuation state via six parallel control inputs toggled between 0 V and VEE.The HMC424ALP3E operates with a single negative supply voltage from ?3 V to ?5 V, and requires an external level shifter to interface with a CMOS/transistor to transistor logic (TTL) interface.The HMC424ALP3E comes in a RoHS compliant, compact, 3 mm ? 3 mm, 16-lead lead frame chip scale package (LFCSP).Applications Cellular infrastructure Microwave radios and very small aperture terminals (VSATs) Test equipment and sensors Intermediate frequency (IF) and RF designs Military and space

The HMC468ALP3E is a broadband 3-bit GaAs IC digital attenuators in a low cost leadless surface mount package. Covering DC to 6.0 GHz, the insertion loss is less than 1 dB typical up to 4 GHz. The attenuator bit values are 1 (LSB), 2 and 4 dB for a total attenuation of 7 dB. Attenuation accuracy is excellent at ?0.4 dB typical step error with an IIP3 of +55 dBm. Three control voltage inputs, toggled between 0 and +5V, are used to select each attenuation state. A single Vdd bias of +5V is required.APPLICATIONS Cellular; UMTS/3G Infrastructure? Fixed Wireless & WLL? Microwave Radio & VSAT? Test Equipment

The HMC525ALC4 is a compact gallium arsenide (GaAs), monolithic microwave integrated circuit (MMIC), in phase quadrature (I/Q) mixer in a 24-terminal, RoHS compliant, ceramic leadless chip carrier (LCC) package. The device can be used as either an image reject mixer or a single sideband (SSB) upconverter. The mixer uses two standard double balanced mixer cells and a 90? hybrid fabricated in a GaAs, metalsemiconductor field effect transistor (MESFET) process. The HMC525ALC4 is a much smaller alternative to a hybrid style image reject mixer and a SSB upconverter assembly. The HMC525ALC4 eliminates the need for wire bonding, allowing the use of surface-mount manufacturing techniques. Applications Microwave and very small aperture terminal radios Test equipment Point to point radios Military electronic warfare; electronic countermeasure; and command, control, communications, and intelligence

The HMC554ALC3B is a general-purpose, double balanced mixer in a leadless RoHS compliant leadless chip carrier (LCC) package that can be used as an upconverter or downconverter between 10 GHz and 20 GHz. This mixer is fabricated in a gallium arsenide (GaAs) metal semiconductor field effect transistor (MESFET) process and requires no external?components or matching circuitry. The HMC554ALC3B provides excellent local oscillator (LO) to RF and LO to intermediate frequency (IF) isolation due to optimized balun structures. The RoHS compliant HMC554ALC3B eliminates the need for wire bonding and is compatible with high volume surface-mount manufacturing techniques.Applications Microwave and very small aperture terminal (VSAT) radios Test equipment Military electronic warfare (EW); electronic countermeasure (ECM); and command, control, communications and intelligence (C3I)

The HMC5805ALS6 is a GaAs pHEMT MMIC Distributed Power Amplifier which operates between DCand 40 GHz. The amplifier provides 11.5 dB of gain,29 dBm output IP3 and +24 dBm of output power at1 dB gain compression while requiring 175 mA froma +10 V supply. The HMC5805ALS6 is ideal for EW,ECM, Radar and test equipment applications. TheHMC5805ALS6 amplifier I/Os are internally matchedto 50 Ohms and the 6x6 mm SMT package is wellsuited for automated assembly techniques.Applications Test instrumentation Microwave radio and VSAT Military and space Telecom infrastructure Fiber optics

The HMC6505A is a compact gallium arsenide (GaAs),pseudomorphic (pHEMT), monolithic microwave integratedcircuit (MMIC) upconverter in a RoHS compliant package thatoperates from 5.5 GHz to 8.6 GHz. This device provides a smallsignal conversion gain of 15 dB with 22 dBc of sidebandrejection. The HMC6505A uses a variable gain amplifier (VGA)preceded by an in-phase and quadrature (I/Q) mixer that isdriven by an active local oscillator (LO). The IF1 and IF2 mixerinputs are provided, and an external 90? hybrid is needed toselect the required sideband. The I/Q mixer topology reducesthe need for filtering of unwanted sideband. The HMC6505Ais a smaller alternative to hybrid style single sideband (SSB)upconverter assemblies, and it eliminates the need for wirebonding by allowing the use of surface-mount manufacturingtechniques.The HMC6505A is available in 5 mm ? 5 mm, 32-terminalleadless chip carrier (LCC) package and operates over a ?40?Cto +85?C temperature range. An evaluation board for theHMC6505A is also available upon request. Applications Point to point and point to multipoint radios Military radars, electronic warfare (EW), and electronic intelligence (ELINT) Satellite communications Sensors