The ADL5504 is a TruPwr? mean-responding (true rms) power detector for use in high frequency receiver and transmitter signal chains from 450 MHz to 6000 MHz. Requiring only a single supply between 2.5 V and 3.3 V, the detector draws less than 1.8 mA. The input is internally ac-coupled and has a nominal input impedance of 500 ?. The rms output is a linear-responding dc voltage with a conversion gain of 1.87 V/V rms at 900 MHz.The ADL5504 is a highly accurate, easy to use means of determining the rms of complex waveforms. It can be used for power measurements of both simple and complex waveforms but is particularly useful for measuring high crest factor (high peak-to-rms ratio) signals, such as W-CDMA, CDMA2000, WiMAX, WLAN, and LTE waveforms.The on-chip modulation filter provides adequate averaging for most waveforms. For more complex waveforms, an external capacitor at the FLTR pin can be used for supplementary signal demodulation. An on-chip, 100 ? series resistance at the output, combined with an external shunt capacitor, creates a low-pass filter response that reduces the residual ripple in the dc output voltage.The ADL5504 offers excellent temperature stability across a 30 dB range and near 0 dB measurement error across temperature over the top portion of the dynamic range. In addition to its temperature stability, the ADL5504 offers low process variations that further reduce calibration complexity.The power detector operates from ?40?C to +85?C and is available in a 6-ball, 0.8 mm ? 1.2 mm, wafer level chip scale package. It is fabricated on a high fT silicon BiCMOS process.Applications Power measurement of W-CDMA, CDMA2000, QPSK-/QAM-based OFDM (LTE and WiMAX), and other complex modulation waveforms RF transmitter or receiver power measurement

The ADL5511 is an RF envelope and TruPwr? rms detector. The envelope output voltage is presented as a voltage that is proportional to the envelope of the input signal. The rms output voltage is independent of the peak-to-average ratio of the input signal.The rms output is a linear-in-V/V voltage with a conversion gain of 1.9 V/V rms at 900 MHz. The envelope output has a conversion gain of 1.46 V/V at 900 MHz and is referenced to an internal 1.1 V reference voltage, which is available on the EREF pin.The ADL5511 can operate from dc to 6 GHz on signals with envelope bandwidths up to 130 MHz.The extracted envelope can be used for RF power amplifier (PA) linearization and efficiency enhancements and the rms output can be used for rms power measurement. The high rms accuracy and fast envelope response are particularly useful for envelope detection and power measurement of broadband, high peak-to-average signals that are used in CDMA2000, W-CDMA, and LTE systems.The ADL5511 operates from ?40?C to +85?C and is available in a 16-lead, 3 mm ? 3 mm LFCSP package.APPLICATIONS RMS power and envelope detection of W-CDMA, CDMA2000, LTE, and other complex waveforms Drain modulation based power amplifier linearization Power amplifier linearization employing envelope-tracking methods

The ADL5530 is a broadband, fixed-gain, linear amplifier that operates at frequencies up to 1000 MHz. The device can be used in a wide variety of wired and wireless devices, including cellular, broadband, CATV, and LMDS/MMDS applications.The ADL5530 provides a gain of 16.5 dB, which is stable over frequency, temperature, power supply, and from device to device. It achieves an OIP3 of 37 dBm with an output compression point of 21.8 dB and a noise figure of 3 dB.This amplifier is single-ended and internally matched to 50 ? with an input return loss of 11 dB. Only input/output ac-coupling capacitors, a power supply decoupling capacitor, and an external inductor are required for operation.The ADL5530 operates with supply voltages of 3 V or 5 V with a supply current of 110 mA.The ADL5530 is fabricated on a GaAs pHEMPT process. The device is packaged in a 3 mm ? 2 mm LFCSP that uses an exposed paddle for excellent thermal impedance. It operates from ?40?C to +85?C. A fully populated evaluation board is also available.Applications VCO buffers General purpose Tx/Rx amplification

The ADL5536 is a 20 dB linear amplifier that operates atfrequencies up to 1 GHz. The device can be used in a widevariety of cellular, CATV, military, and instrumentationequipment.The ADL5536 provides the highest dynamic range availablefrom an internally matched IF gain block. This is accomplishedby providing extremely low noise figures and very high OIP3specifications simultaneously across the entire 1 GHz frequencyrange. The ADL5536 also provides extremely flat gain and P1dBover frequency, which are stable over temperature, power supply,and from device to device.The device is internally matched to 50 ? at the input and output,making the ADL5536 very easy to implement in a wide varietyof applications. Only input/output ac coupling capacitors, powersupply decoupling capacitors, and an external inductor arerequired for operation.The ADL5536 is fabricated on a GaAs HBT process and has anESD rating of ?2 kV (Class 2). The device is assembled in anMSL-1 rated SOT-89 package that uses an exposed paddle forexcellent thermal impedance.The ADL5536 consumes only 105 mA on a single 5 V supplyand is fully specified for operation from ?40?C to +85?C.The ADL5536 is also pin-compatible with the 16 dB gainADL5535. Fully populated evaluation boards are availablefor each amplifier.

The ADL5541 is a broadband 15 dB linear amplifier that operates at frequencies up to 6 GHz. The device can be used in a wide variety of CATV, cellular, and instrumentation equipment. The ADL5541 provides a gain of 15 dB, which is stable over frequency, temperature, power supply, and from device to device. The device is internally matched to 50 ? with an input return loss of 10 dB or better up to 6 GHz. Only input/output ac coupling capacitors, power supply decoupling capacitors, and an external inductor are required for operation. The ADL5541 is fabricated on an InGaP HBT process and has an ESD rating of 1 kV (Class 1C). The device is packaged in a 3 mm ? 3 mm LFCSP that uses an exposed paddle for excellent thermal impedance. The ADL5541 consumes 90 mA on a single 5 V supply and is fully specified for operation from ?40?C to +85?C. A fully populated RoHS-compliant evaluation board is available. The ADL5542 is a companion part that offers a gain of 20 dB in a pin-compatible package.?

The ADL5723 is a narrow-band, high performance, low noise amplifier (LNA) targeting microwave radio link receiver designs. The monolithic silicon germanium (SiGe) design is optimized for microwave radio link bands ranging from 10.1 GHz to 11.7 GHz. The unique design offers a single-ended 50 ? input impedance and provides a 100 ? balanced differential output that is ideal for driving Analog Devices, Inc., differential downconverters and radio frequency (RF) sampling analog-to-digital converters (ADCs). This LNA provides noise figure performance that, in the past, required more expensive three-five (III-V) compounds process technology to achieve.The ADL5721 and ADL5723 to ADL5726 family of narrow-band LNAs are each packaged in a tiny, thermally enhanced, 2.00 mm ?2.00 mm LFCSP package. The ADL5721 and ADL5723 to ADL5726 family operates over the temperature range of ?40?C to +85?C.Applications Point to point microwave radios Instrumentation Satellite communications (SATCOM) Phased arrays

The ADL5724 is a narrow-band, high performance, low noise amplifier (LNA) targeting microwave radio link receiver designs. The monolithic silicon germanium (SiGe) design is optimized for microwave radio link bands ranging from 12.7 GHz to 15.4 GHz. The unique design offers a single-ended 50 ? input impedance and provides a 100 ? balanced differential output that is ideal for driving Analog Devices, Inc., differential downconverters and radio frequency (RF) sampling analog-to-digital converters (ADCs). This LNA provides noise figure performance that, in the past, required more expensive three-five (III-V) compounds process technology to achieve.The ADL5721 and ADL5723 to ADL5726 family of narrow-band LNAs are each packaged in a tiny, thermally enhanced, 2.00 mm ? 2.00 mm LFCSP package. The ADL5721 and ADL5723 to ADL5726 family operates over the temperature range of ?40?C to +85?C.Applications Point to point microwave radios Instrumentation Satellite communications (SATCOM) Phased arrays

The ADL5726 is a narrow-band, high performance, low noise amplifier (LNA) targeting microwave radio link receiver designs. The monolithic silicon germanium (SiGe) design is optimized for microwave radio link bands ranging from 21.2 GHz to 23.6 GHz. The unique design offers a single-ended 50 ? input impedance and provides a 100 ? balanced differential output that is ideal for driving Analog Devices, Inc., differential downconverters and radio frequency (RF) sampling analog-to-digital converters (ADCs). This LNA provides noise figure performance that, in the past, required more expensive three-five (III-V) compounds process technology to achieve.The ADL5721 and ADL5723 to ADL5726 family of narrow-band LNAs are each packaged in a tiny, thermally enhanced, 2.00 mm ? 2.00 mm LFCSP package. The ADL5721 and ADL5723 to ADL5726 family operates over the temperature range of ?40?C to +85?C.Applications Point to point microwave radios Instrumentation Satellite communications (SATCOM) Phased arrays

The ADL8142 is a gallium arsenide (GaAs), monolithic microwave integrated circuit (MMIC), pseudomorphic high electron mobility transistor (pHEMT), low noise wideband amplifier that operates from 23 GHz to 31 GHz. The ADL8142 provides a typical gain of 27 dB, a 1.6 dB typical noise figure, and a typical output third-order intercept (OIP3) of 29 dBm at 27 GHz to 31 GHz, requiring only 25 mA from a 2 V supply voltage. Note that the OIP3 can be improved with larger drain currents. The ADL8142 also features inputs and outputs that are ac-coupled and internally matched to 50 ?, making it ideal for high capacity microwave radio applications.The ADL8142 is housed in a RoHS-compliant, 2 mm ? 2 mm, 8-lead LFCSP.APPLICATIONSSatellite communicationTelecommunicationsCivilian radar

The ADL8150 is a self biased gallium arsenide (GaAs), monolithic microwave integrated circuit (MMIC), heterojunction bipolar transistor (HBT), low phase noise amplifier that operates from 6 GHz to 14 GHz. The amplifier provides 12 dB of typical signal gain, 18 dBm output power at 1 dB gain compression (OP1dB), and a typical output third-order intercept (OIP3) of 30 dBm. The amplifier requires 74 mA from a 5 V collector supply voltage. The ADL8150 also features inputs and outputs (I/Os) that are internally matched to 50 ?, and facilitates integration into multichip modules (MCMs). Note that throughout the data sheet, multifunction pins, such as RFOUT/VCC, are referred to either by the entire pin name or by a single function of the pin, for example, RFOUT, when only that function is relevant.Applications Military and space Test instrumentation Communications