The HMC444LP4(E) is an active miniature x8 frequency multiplier utilizing InGaP GaAs HBT technology in 4x4 mm leadless surface mount package. Power output is +6 dBm typical from a 5V supply voltage and varies little vs. input power, temperature and supply voltage.Suppression of undesired fundamental and sub-harmonics is >25 dBc typical with respect to output signal level. The low additive SSB phase noise of -136 dBc/Hz at 100 kHz offset helps the user maintain good system noise performance. The HMC444LP4(E) is ideal for use in LO multiplier chains allowing reduced parts count vs. traditional approaches.APPLICATIONS Fiber Optic Point-to-Point Radios Military Radar

The HMC369LP3(E) is an active miniature x2 frequency multiplier utilizing InGaP GaAs HBT technology in a 3x3 mm leadless QFN surface mount package. Power output is +4 dBm typical from a single +5V supply and varies little vs. input power, temperature and supply voltage. Suppression of undesired fundamental and sub-harmonics is 30 dBc typical with respect to output signal level.The low additive SSB phase noise of -142 dBc/Hz at 100 kHz offset helps the user maintain good system noise performance. The HMC369LP3(E) is ideal for use in LO multiplier chains allowing reduced parts count versus traditional approaches. The HMC369LP3(E) is also useful for OC-192 clock recovery. The application of 10 GBPS data to the input generates a -7 dBm clock tone at the output with spurious signals suppressed by 25 dB.APPLICATIONS OC-192 Clock Recovery Microwave Radio & VSAT Military Radios, Radar & ECM Test Instrumentation

The HMC454ST89(E) is a high dynamic range GaAs InGaP Heterojunction Bipolar Transistor (HBT) 1?2 watt MMIC amplifier operating between 0.4 and 2.5 GHz. Packaged in a low cost industry standard SOT89, the amplifier gain is typically 17.8 dB from 0.8 to 1.0 GHz and 12.5 dB from 1.8 to 2.2 GHz. Utilizing a minimum number of external components and a single +5V supply, the amplifier output IP3 can be optimized to +40 dBm at 0.9 GHz or +42 dBm at 2.0 GHz. The high output IP3 and PAE makes the HMC454ST89(E) an ideal driver amplifier for Cellular/PCS/3G, WLL, ISM and Fixed Wireless applications.Applications GSM, GPRS & EDGE? CDMA & W-CDMA? CATV/Cable Modem? Fixed Wireless & WLL

The HMC586LC4B is a wideband GaAs InGaP Voltage Controlled Oscillator which incorporates the resonator, negative resistance device, and varactor diode. Output power and phase noise performance are excellent over temperature due to the oscillator?s monolithic construction. The Vtune port accepts an analog tuning voltage from 0 to +18V. The HMC586LC4B VCO operates from a single +5V supply, consumes only 55 mA of current, and is housed in a RoHS compliant SMT package. This wideband VCO uniquely combines the attributes of ultra small size, low phase noise, low power consumption, and wide tuning range.APPLICATIONS Industrial/Medical Equipment Test & Measurement Equipment Military Radar, EW & ECM

The HMC733LC4B is a wideband MMIC Voltage Controlled Oscillator which incorporates the resonator, negative resistance device, and varactor diode. Output power and phase noise performance are excellent over temperature due to the oscillator?s monolithic construction. The Vtune port accepts an analog tuning voltage from 0 to +22V. The HMC733LC4B VCO operates from a single +5V supply, consumes only 70 mA of current, and is housed in a RoHS compliant SMT package. This wideband VCO uniquely combines the attributes of ultra small size, low phase noise, low power consumption, and wide tuning range.APPLICATIONS Industrial/Medical Equipment Test & Measurement Equipment Military Radar, EW & ECM

The HMC453ST89(E) is a high dynamic range GaAs InGaP HBT 1.6 Watt MMIC power amplifier operating from 0.4 to 2.2 GHz and packaged in industry standard SOT89 packages. Utilizing a minimum number of external components and a single +5V supply, the amplifier output IP3 can be optimized to +47 dBm at 0.4 GHz or +49 dBm at 2.1 GHz. The high output IP3 and PAE make the HMC453ST89(E) ideal power amplifier for Cellular/ PCS/3G and Fixed Wireless applications.Applications GSM, GPRS & EDGE? CDMA & W-CDMA? CATV/Cable Modem? Fixed Wireless

The HMC508LP5(E) is a GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCO. The HMC508LP5(E) integrates resonators, negative resistance devices, varactor diodes and feature a half frequency output. The VCO?s phase noise performance is excellent over temperature, shock, and process due to the oscillator?s monolithic structure. Power output is +15 dBm typical from a +5V supply. The voltage controlled oscillator is packaged in a leadless QFN 5x5 mm surface mount package, and requires no external matching components.APPLICATIONS VSAT Radio? Point-to-Point/Multi-Point Radio? Test Equipment & Industrial Controls? Military End-Use

The HMC530LP5(E) is a GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCOs. The HMC530LP5(E) integrates resonators, negative resistance devices, varactor diodes and feature half frequency and divide-by-4 outputs. The VCO's phase noise performance is excellent over temperature, shock and process due to the oscillator's monolithic structure. Power output is +11 dBm typical from a +5V supply voltage. The prescaler and RF/2 functions can be disabled to conserve current if not required. The voltage controlled oscillator is packaged in a leadless QFN 5x5 mm surface mount package, and requires no external matching components.APPLICATIONS Point-to-Point Radios Point-to-Multi-Point Radios Test Equipment & Industrial Controls SATCOM Military End-Use

The HMC583LP5(E) is a GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCO. The HMC583LP5(E) integrates resonators, negative resistance devices, varactor diodes and feature half frequency and divide-by-4 outputs. The VCO?s phase noise performance is excellent over temperature, shock, and process due to the oscillator?s monolithic structure. Power output is +11 dBm typical from a +5V supply voltage. The prescaler and RF/2 functions can be disabled to conserve current if not required. The voltage controlled oscillator is packaged in a leadless QFN 5?5 mm surface mount package, and requires no external matching components.APPLICATIONS Point to Point/Multipoint Radio Test Equipment & Industrial Controls SATCOM Military End-Use

The HMC453QS16G(E) is a high dynamic range GaAs InGaP Heterojunction Bipolar Transistor (HBT) 1.6 watt MMIC power amplifier operating between 0.4 and 2.2 GHz. Packaged in a miniature 16 lead QSOP plastic package, the amplifier gain is typically 21.5 dB at 0.4 GHz and 8 dB at 2.1 GHz. Utilizing a minimum number of external components and a single +5V supply, the amplifier output IP3 can be optimized to +47 dBm at 0.4 GHz or +51 dBm at 2.1 GHz. The power control (VPD) can be used for full power down or RF output power/current control. The high output IP3 and PAE make the HMC453QS16G(E) ideal power amplifier for Cellular/ PCS/3G, WLL, ISM and Fixed Wireless applications.Applications GSM, GPRS & EDGE? CDMA & W-CDMA? CATV/Cable Modem? Fixed Wireless & WLL