Analog Devices Inc.

The HMC815B is a compact gallium arsenide (GaAs),pseudomorphic high electron mobility transistor (pHEMT),monolithic microwave integrated circuit (MMIC) upconverterin a RoHS compliant package that operates from 21 GHz to27 GHz. This device provides a small signal conversion gain of12 dB and a sideband rejection of 20 dBc. The HMC815Butilizes a driver amplifier proceeded by an in phase/quadrature(I/Q) mixer where the LO is driven by an active 2? multiplier.IF1 and IF2 mixer inputs are provided, and an external 90?hybrid is needed to select the required sideband. The I/Q mixertopology reduces the need for filtering of unwanted sideband.The HMC815B is a smaller alternative to hybrid style singlesideband (SSB) downconverter assemblies, and it eliminates theneed for wire bonding by allowing the use of surface-mountmanufacturing techniques.The HMC815B is available in 4.90 mm ? 4.90 mm, 32-terminalceramic LCC package and operates over the ?40?C to +85?Ctemperature range. An evaluation board for the HMC815B isalso available upon request.Applications Point to point and point to multipoint radios Military radars, electronic warfare, and electronic intelligence Satellite communications Sensors

$330.37