|
|
onsemi
LM358N
|
Texas Instruments
LM358BIDR
|
| Price |
|
|
|
| RoHS |
|
Compliant |
See ti.com |
| Lead Status |
|
|
See ti.com |
| Features |
|
|
Cost Optimized,EMI Hardened |
| Package Group |
|
|
SOIC|8 |
| Architecture |
|
|
Bipolar |
| Slew Rate(Typ)(V/us) |
|
|
0.5 |
| GBW(Typ)(MHz) |
|
|
1.2 |
| Operating Temperature Range(C) |
|
|
-40 to 85 |
| Vn at 1kHz(Typ)(nV/rtHz) |
|
|
40 |
| Rating |
|
|
Catalog |
| Total Supply Voltage(Min)(+5V=5, +/-5V=10) |
|
|
3 |
| Rail-to-Rail |
|
|
In to V- |
| Vos (Offset Voltage @ 25C)(Max)(mV) |
|
|
3 |
| Input Bias Current(Max)(pA) |
|
|
100000 |
| CMRR(Min)(dB) |
|
|
75 |
| Package Size |
|
|
mm2 |
| Offset Drift(Typ)(uV/C) |
|
|
4 |
| Output Current(Typ)(mA) |
|
|
30 |
| Iq per channel(Max)(mA) |
|
|
0.5 |
| Number of Channels(#) |
|
|
2 |
| Approx. price(US$) |
|
|
0.07 | 1ku |
| CMRR(Typ)(dB) |
|
|
100 |
| Iq per channel(Typ)(mA) |
|
|
0.3 |
| Total Supply Voltage(Max)(+5V=5, +/-5V=10) |
|
|
36 |
