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		ON Semiconductor LM358DR2	onsemi LM358DR2G
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# Series Cells 6

Absolute Vin (safety rating)(Max)((V)) 6

Additional Features 119

Approx. Price (US$) 97

Architecture 147

Battery Charge Voltage(V) 6

CM (Min)(dB) 6

CM (Typ)(dB) 8

CMRR(Min)(dB) 124

CMRR(Typ)(dB) 123

Cell Chemistry 7

Charge Current(Max)(A) 7

Charging Control Topology 6

Control Interface 6

Estimated Package Size (WxL)(mm²) 13

Features 11

GBW(Typ)(MHz) 142

IIB(Max)(pA) 28

Input Bias Current(Max)(pA) 89

Interface 27

Io(Typ)(mA) 8

Iq per channel(Max)(mA) 130

Iq per channel(Typ)(mA) 135

Local Sensor Accuracy(Max)(+/- C) 27

Number of Channels(#) 140

Number of channels(#) 9

Offset Drift(Typ)(uV/C) 130

Operating Temperature ange(C) 8

Operating Temperature Range(C) 150

Operating Vin(Max)(V) 6

Operating temperature range(C) 6

Output Capacitor Type 6

Output Current(Typ)(mA) 113

Output Options 6

Output current(Typ)(mA) 6

Package Group 148

Package Size 161

Package size 8

Rail-to-Rail 122

Rail-to-rail 14

Rating 178

Slew ate(Typ)(V/us) 8

Slew Rate(Typ)(V/us) 113

Supply Current(Max)(uA) 27

Supply Voltage(Max)(V) 27

Supply Voltage(Min)(V) 27

Total Supply Voltage(Max)(+5V=5, +/-5V=10) 130

Total Supply Voltage(Min)(+5V=5, +/-5V=10) 129

Vn at 1 kHz(Typ)(nV/rtHz) 8

Vn at 1kHz(Typ)(nV/rtHz) 131

Vos (Offset Voltage @ 25C)(Max)(mV) 131

ail-to- ail 8

ating 16