LM358AM

Bourns, Inc. LM358AM

AS358GTR-E1

Diodes Inc. AS358GTR-E1

LM358N/NOPB

National Semiconductor LM358N/NOPB

AS358GTR-G1

Diodes Inc. AS358GTR-G1

LM358DE4

Texas Instruments LM358DE4

LM358ADG4

Texas Instruments LM358ADG4

LM358PWG4

Texas Instruments LM358PWG4

LM358BIDR

Texas Instruments LM358BIDR

Price
RoHS Compliant Compliant Yes Compliant Compliant Compliant Compliant See ti.com
Lead Status No Yes No No See ti.com
Features Cost Optimized,EMI Hardened
Package Group SOIC|8
Architecture Bipolar
Slew Rate(Typ)(V/us) 0.5
GBW(Typ)(MHz) 1.2
Operating Temperature Range(C) -40 to 85
Vn at 1kHz(Typ)(nV/rtHz) 40
Rating Catalog
Total Supply Voltage(Min)(+5V=5, +/-5V=10) 3
Rail-to-Rail In to V-
Vos (Offset Voltage @ 25C)(Max)(mV) 3
Input Bias Current(Max)(pA) 100000
CMRR(Min)(dB) 75
Package Size mm2
Offset Drift(Typ)(uV/C) 4
Output Current(Typ)(mA) 30
Iq per channel(Max)(mA) 0.5
Number of Channels(#) 2
Approx. price(US$) 0.07 | 1ku
CMRR(Typ)(dB) 100
Iq per channel(Typ)(mA) 0.3
Total Supply Voltage(Max)(+5V=5, +/-5V=10) 36