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Bourns, Inc.
LM358AM
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Diodes Inc.
AS358GTR-E1
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National Semiconductor
LM358N/NOPB
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Diodes Inc.
AS358GTR-G1
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Texas Instruments
LM358DE4
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Texas Instruments
LM358ADG4
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Texas Instruments
LM358PWG4
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Texas Instruments
LM358BIDR
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Price |
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RoHS |
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Compliant |
Compliant |
Yes |
Compliant |
Compliant |
Compliant |
Compliant |
See ti.com |
Lead Status |
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No |
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Yes |
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No |
No |
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See ti.com |
Features |
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Cost Optimized,EMI Hardened |
Package Group |
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SOIC|8 |
Architecture |
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Bipolar |
Slew Rate(Typ)(V/us) |
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0.5 |
GBW(Typ)(MHz) |
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1.2 |
Operating Temperature Range(C) |
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-40 to 85 |
Vn at 1kHz(Typ)(nV/rtHz) |
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40 |
Rating |
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Catalog |
Total Supply Voltage(Min)(+5V=5, +/-5V=10) |
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3 |
Rail-to-Rail |
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In to V- |
Vos (Offset Voltage @ 25C)(Max)(mV) |
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3 |
Input Bias Current(Max)(pA) |
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100000 |
CMRR(Min)(dB) |
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75 |
Package Size |
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mm2 |
Offset Drift(Typ)(uV/C) |
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4 |
Output Current(Typ)(mA) |
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30 |
Iq per channel(Max)(mA) |
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0.5 |
Number of Channels(#) |
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2 |
Approx. price(US$) |
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0.07 | 1ku |
CMRR(Typ)(dB) |
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100 |
Iq per channel(Typ)(mA) |
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0.3 |
Total Supply Voltage(Max)(+5V=5, +/-5V=10) |
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36 |