Analog Devices Inc.

Dual-Channel, 3.7 GHz to 5.3 GHz, Receiver Front End Features: Integrated dual-channel RF front end 2-stage LNA and high power SPDT switch On-chip bias and matching Single supply operation Gain High gain mode: 33 dB typical at 4.6 GHz Low gain mode: 18 dB typical at 4.6 GHz Low noise figure High gain mode: 1.6 dB typical at 4.6 GHz Low gain mode: 1.6 dB typical at 4.6 GHz High channel to channel isolation  Between RxOUT-ChA and RxOUT-ChB: 45 dB typical Between TERM-ChA and TERM-ChB: 53 dB typical  Low insertion loss: 0.5 dB typical at 4.6 GHz High power handling at TCASE = 105°C Full lifetime LTE average power (9 dB PAR): 40 dBm Single event (<10 sec operation) LTE average power (9 dB PAR): 43 dBm High OIP3: 31 dBm typical Power-down mode and low gain mode for LNA Low supply current High gain mode: 86 mA typical at 5 V Low gain mode: 36 mA typical at 5 V Power-down mode: 12 mA typical at 5 V Positive logic control 40-lead, 6 mm × 6 mm LFCSP 

$25.92