onsemi

Asymmetric Dual N-Channel PowerTrench Power Stage MOSFET 30V Features: MOSFET integration enables optimum layout for lower circuit inductance and reduced switch node ringing ; Q1: N-Channel Max rDS(on) = 8 m at VGS = 10 V, ID = 13 A Max rDS(on) = 11 m at VGS = 4.5 V, ID = 11 A; Q2: N-Channel Max rDS(on) = 2.8 m at VGS = 10 V, ID = 23 A Max rDS(on) = 3.5 m at VGS = 4.5 V, ID = 21 A ; Low inductance packaging shortens rise/fall times, resulting in lower switching losses ; RoHS Compliant

$0.00 - $11.22
Distributor SKU Stock MOQ 1 10 50 100 1000 10000 Purchase
AVNET Europe FDMS3686S 3000 * $1.04 Buy
AVNET Express FDMS3686S 272467 3000 $0.00 Buy
Farnell FDMS3686S 225267 100 * $0.87 * $0.87 * $0.87 Buy
Newark FDMS3686S 3000 $0.76 $0.76 $0.76 $0.76 $0.76 $0.71 Buy
RS Components FDMS3686S $11.22 Buy
Win Source FDMS3686S 2770 6 Buy

Technical Specifications

Lead Free Status Yes
ROHS Compliance Yes