International Rectifier (IR)

MOSFET, N, DIRECTFET, ST; Transistor Polarity:N Channel; Continuous Drain Current Id:55A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.007ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:12V; Power Dissipation Pd:2.1W; Transistor Case Style:DirectFET ST; No. of Pins:7Pins; Operating Temperature Max:-; MSL:-; SVHC:No SVHC (27-Jun-2018); Capacitance Ciss Typ:2120pF; Charge Qrr @ Tj = 25°C Typ:33nC; Current Id Max:9.4A; Current Temperature:25°C; External Depth:4.85mm; External Length / Height:0.7mm; External Width:3.95mm; Full Power Rating Temperature:25°C; IC Package (Case style):ST; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-40°C; No. of Transistors:1; On State Resistance Max:9mohm; Pulse Current Idm:100A; Reverse Recovery Time trr Typ:31ns; SMD Marking:6608; Voltage Vds:30V; Voltage Vgs Max:12V; Voltage Vgs th Max:3V; Voltage Vgs th Min:1V

* $2.57