MOSFET, DUAL, PP, SO-8; Transistor Polarity:Dual P Channel; Continuous Drain Current Id:5.3A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.025ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-3V; Power Dissipation Pd:1.1W; Transistor Case Style:SOIC; No. of Pins:8Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jun-2015); Current Id Max:-5.3A; Fall Time tf:34ns; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; No. of Transistors:2; On State Resistance @ Vgs = 4.5V:41mohm; On State resistance @ Vgs = 10V:25mohm; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; P Channel Gate Charge:33nC; Pulse Current Idm:40A; Rise Time:12ns; Termination Type:Surface Mount Device; Turn Off Time:60ns; Turn On Time:9ns; Voltage Vds Typ:-30V; Voltage Vgs Max:-20V; Voltage Vgs Rds on Measurement:4.5V
* $0.65 - * $1.02
