Toshiba Electronics Europe

MOSFET, N CH, 1.1A, 20V, SOT23; Transistor Polarity:N Channel; Continuous Drain Current Id:1.1A; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.16ohm; Rds(on) Test Voltage Vgs:4V; Threshold Voltage Vgs:1.1V; Power Dissipation Pd:300mW; Transistor Case Style:US6; No. of Pins:6Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (15-Jun-2015); Current Id Max:1.1A; Termination Type:Surface Mount Device; Voltage Vds Typ:20V; Voltage Vgs Max:12V; Voltage Vgs Rds on Measurement:4V

* $0.43