Toshiba Electronics Europe

Toshiba N-Channel MOSFET, 136 A, 100 V, 3-Pin D2PAK TK65G10N1, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 4.5 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 156 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±20 V, Forward Diode Voltage: 1.2V

$1,202.40