TSM60NB260CI C0G

Taiwan Semiconductor

TSM60NB260CI C0G N-Channel MOSFET, 13 A, 600 V, 3-Pin ITO-220S Taiwan Semi. Maximum Drain Source Resistance: 260 mΩ. Maximum Gate Threshold Voltage: 4V. Minimum Gate Threshold Voltage: 2V. Maximum Gate Source Voltage: ±30 V. Mounting Type: Through Hole. Transistor Configuration: Single. Channel Mode: Enhancement. Category: Power MOSFET. Maximum Power Dissipation: 32.1 W. Typical Gate Charge @ Vgs: 30 nC @ 10 V., Taiwan Semiconductor

$2.88 - $963.60
Distributor SKU Stock MOQ 1 10 50 100 1000 10000 Purchase
AVNET Express TSM60NB260CI C0G 2000 $2.72 Buy
Mouser Electronics 821-TSM60NB260CIC0G 2065 1 $4.16 $3.49 $3.31 $2.29 $2.29 $2.02 Buy
RS Components TSM60NB260CI C0G $963.60 Buy
RS Components (APAC) TSM60NB260CI C0G $60.98 Buy
Win Source TSM60NB260CI C0G 4100 Buy

Technical Specifications

ROHS Compliance Not Compliant