1000µF Hermetically Sealed Tantalum Capacitors 75V Axial, Can 500mOhm

150 Ohms @ 100MHz 1 Ferrite Bead 1206 (3216 Metric) 300mA 200mOhm

1 MOhms ±1% 0.05W, 1/20W Chip Resistor 0201 (0603 Metric) Thick Film

Vishay Resistor, Metal Film;475 Ohms;0.50 W;+/-1%;350 V;Axial;100 ppm/degC;900 VAC;1.50, MPN: RN65D4750F

Vishay Power Factor Correction Capacitor (PFC) 3 x 77μF 20kvar 3, Voltage: 525V ac, Capacitance: 3 x 77µF, Dielectric Material: Polypropylene, Mounting Type: Stud Mount, Series: PhMKP, Width: 88.2mm, Height: 265mm, Maximum Operating Temperature: +65°C, Tolerance (Minus): -5%, Tolerance (Plus): +5%, Weight: 1.7kg, MPN: PhMKP525.3.20,00-S84

Vishay Dual N-Channel 30 V (D-S) MOSFET with Sc, Maximum Continuous Drain Current: 197 (Channel 2) A, 76 (Channel 1) A, Maximum Drain Source Voltage: 30 (Channel 1) V, 30 (Channel 2) V, Package Type: PowerPAIR 6 x 5 F, Mounting Type: Surface Mount, Pin Count: 8, Maximum Drain Source Resistance: 0.0014 (Channel 2) Ω, 0.005 (Channel 1) Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.2 (Channel 2) V, 2.4 (Channel 1) V, Minimum Gate Threshold Voltage: 1.1 (Channel 1) V, 1.1 (Channel 2) V, Maximum Power Dissipation: 28 W, 74 W, Maximum Gate Source Voltage: +16 V, +20 V, -12 V, -16 V, Height: 0.7mm, MPN: SiZF920DT-T1-GE3

Vishay P-Channel 30-V (D-S) MOSFET PowerPAK 080, Maximum Continuous Drain Current: 500 mA, Maximum Drain Source Voltage: 30 V, Package Type: PowerPAK 0806, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 3.5 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 1.4V, Minimum Gate Threshold Voltage: 0.6V, Maximum Power Dissipation: 1.25 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±12 V, Forward Diode Voltage: 1.2V, MPN: SiUD401ED-T1-GE3

Vishay N-Channel 250-V (D-S) MOSFET PowerPAK 12, Maximum Continuous Drain Current: 12.3 A, Maximum Drain Source Voltage: 250 V, Package Type: PowerPAK 1212-S, Mounting Type: Surface Mount, Pin Count: 8, Maximum Drain Source Resistance: 190 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 65.8 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±20 V, Forward Diode Voltage: 1.2V, MPN: SiSS92DN-T1-GE3

10 kOhms ±0.1% 0.125W, 1/8W Chip Resistor 0603 (1608 Metric) Anti-Sulfur, Automotive AEC-Q200, Moisture Resistant Thin Film

Infrared Emitters - High Power IR EMITTER HIGH POWR 950NM 5MM 17DEG-e3