The ADXL343 is a versatile 3-axis, digital-output, low?g MEMS accelerometer. Selectable measurement range and bandwidth, and configurable, built-in motion detection make it suitable for sensing acceleration in a wide variety of applications. Robustness to 10,000 g?of shock and a wide temperature range (?40?C to +85?C) enable use of the accelerometer even in harsh environments.The ADXL343 measures acceleration with high resolution (13-bit) measurement at up to ?16g. Digital output data is formatted as 16-bit twos complement and is accessible through either an SPI (3- or 4-wire) or I2C digital interface. The ADXL343 can measure the static acceleration of gravity in tilt-sensing applications, as well as dynamic acceleration resulting from motion or shock. Its high resolution (3.9 mg/LSB) enables measurement of inclination changes less than 1.0?.Several special sensing functions are provided. Activity and inactivity sensing detect the presence or lack of motion. Tap sensing detects single and double taps in any direction. Free-fall sensing detects if the device is falling. These functions can be mapped individually to either of two interrupt output pins.An integrated memory management system with a 32-level first in, first out (FIFO) buffer can be used to store data to minimize host processor activity and lower overall system power consumption.The ADXL343 is supplied in a small, thin, 3 mm ? 5 mm ? 1 mm, 14-terminal, plastic package.APPLICATIONS Handsets Gaming and pointing devices Hard disk drive (HDD) protection

The ADXL346 Development Board is an easy-to-use tool designed to shorten application development time by providing a ready-to-use platform for data collection and firmware development. The board is pre-configured as a datalogger that can be used to gather data for refining algorithms, tuning thresholds, and generally familiarizing oneself with accelerometer data. Powered by two AAA batteries, the board is completely untethered and integrates seamlessly into portable applications. Logged data is stored on a MicroSD memory card, providing essentially unlimited memory capacity and operating system versatility. Data is stored in a text (.txt) file, so no software installation is required to operate the board or read data. A 2GB MicroSD card and a USB MicroSD card reader are provided with the board. Additionally, the board is fully programmable, providing a hardware platform on which firmware can be tested in parallel with development of application hardware. Communications and processing are performed by an ARM7-based ADuC7024 micro-controller, and firmware is written in C. A programming cable is provided with the board, and a development environment and header files are supplied on this page. Finally, the platform can be duplicated in the final application, having already been tested with the application firmware. Schematics and layout can be found under the Supporting Documentation tab and can be used freely in your application. Note that this board is not configured to display real-time data. For real-time evaluation of the ADXL346, please refer to the Inertial Sensor Evaluation Board. For a simple ADXL346 Breakout Board, refer to the EVAL-ADXL346Z.

The EVAL-ADXL367Z is a simple breakout board that enables easy connection of an ADXL367 into an existing system. The ADXL367 is a nanowatt, 3-axis, digital-output accelerometer whose industry leading low power consumption and built-in features make it ideal for use in a wide variety of applications. Due to its small size, the EVAL-ADXL367Z has minimal effect on performance of the system and of the accelerometer, and thus it is ideal for evaluation of the ADXL367 in an existing system. Note that the ADXL367 must be communicated with digitally via SPI or I2C. No processor is included with the EVAL-ADXL367Z; firmware must be supplied externally by the user. For evaluation boards that include a processor, please see the EVAL-ADXL367-SDP. MARKETS & TECHNOLOGY Industrial Digital Healthcare Prosumer Automotive Aerospace and Defense

The ADXL375 is a small, thin, 3-axis MEMS accelerometer that provides low power consumption and high resolution measurement up to ?200?g. The digital output data is formatted as 16-bit, twos complement data and is accessible through a SPI (3- or 4-wire) or I2C digital interface.An integrated memory management system with a 32-level first in, first out (FIFO) buffer can be used to store data to minimize host processor activity and lower overall system power consumption.Low power modes enable intelligent motion-based power management with threshold sensing and active acceleration measurement at extremely low power dissipation.The ADXL375 is supplied in a small, thin, 3 mm ? 5 mm ? 1 mm, 14-lead LGA.APPLICATIONS Concussion and head trauma detection High force event detection

The HMC582LP5(E) is a GaAs InGaP Herterojunction Bipolar Transistor (HBT) MMIC VCOs. The HMC582LP5(E) integrates resonators, negative resistance devices, varactor diodes and feature half frequency and divide-by-4 outputs. The VCO's phase noise performance is excellent over temperature, shock and process due to the oscillator's monolithic structure.Power output is +9 dBm typical from a +5V supply voltage. The prescaler and RF/2 functions can be disabled to conserve current if not required. The voltage controlled oscillator is packaged in a leadless QFN 5?5 mm surface mount package, and requires no external matching components.APPLICATIONS Point-to-Point Radios Point-to-Multi-Point Radios Test Equipment & Industrial Controls SATCOM Military End-Use

The ADRF5021 is a general-purpose single-pole, double-throw (SPDT) switch manufactured using a silicon process. It comes in a 3 mm ? 3 mm, 20-terminal land grid array (LGA) package and provides high isolation and low insertion loss from 9 kHz to 30 GHz.This broadband switch requires dual supply voltages, +3.3 V and ?2.5 V, and provides CMOS/LVTTL logic-compatible control.Applications Test instrumentation Microwave radios and very small aperture terminals (VSATs) Military radios, radars, electronic counter measures (ECMs) Broadband telecommunications systems

The ADRF5024 is a reflective, single-pole double-throw (SPDT) switch manufactured in the silicon process.This switch operates from 100 MHz to 44 GHz with better than 1.7 dB of insertion loss and 35 dB of isolation. The ADRF5024 has an radio frequency (RF) input power handling capability of 27 dBm for both the through path and hot switching.The ADRF5024 draws a low current of 14 ?A on the positive supply of +3.3 V and 120 ?A on negative supply of ?3.3 V. The device employs complementary metal-oxide semiconductor (CMOS)-/low voltage transistor to transistor logic (LVTTL)compatible controls.The ADRF5024 is pin-compatible with the ADRF5025, low frequency cutoff version, which operates from 9 kHz to 44 GHz.The ADRF5024 RF ports are designed to match a characteristic impedance of 50 ?. For ultrawideband products, impedance matching on the RF transmission lines can further optimize high frequency insertion loss and return loss characteristics. Refer to the Electrical Specifications section, Typical Performance Characteristics section, and Applications Information section for more details.The ADRF5024 comes in a 2.25 mm ? 2.25 mm, 12-terminal, RoHS-compliant, land grid array (LGA) package and can operate between ?40?C to +105?C.The ADRF5024-EP supports defense and aerospace applications (AQEC).Applications Industrial scanners Test and instrumentation Cellular infrastructure: 5G mmWave Military radios, radars, electronic counter measures (ECMs) Microwave radios and very small aperture terminals (VSATs)

The ADRF5043 is a nonreflective, SP4T switch manufactured in the silicon on insulator (SOI) process.The ADRF5043 operates from 9 kHz to 44 GHz with an insertion loss of lower than 2.5 dB and an isolation of higher than 36 dB. The device has a RF input power handling capability of 24 dBm for both through and terminated paths.The ADRF5043 requires a dual-supply voltage of +3.3 V and ?3.3 V. The device employs CMOS- and low voltage transistor to transistor logic (LVTTL)-compatible controls.The ADRF5043 has enable and logic select controls to feature all off state and port mirroring, respectively. The ADRF5043 is pin compatible with the ADRF5042 fast switching version, which operates from 100 MHz to 44 GHz.The ADRF5043 comes in a 24-terminal, 3 mm ? 3 mm, RoHS compliant, land grid array (LGA) package and can operate from ?40?C to +105?C.Applications Industrial Scanners Test instrumentation Cellular infrastructure?millimeterwave (mmWave) 5G Military radios, radars, electronic counter measures (ECMs) Microwave radios and very small aperture terminals (VSATs)

The ADRF5044 is a general-purpose, single-pole, four-throw (SP4T) switch manufactured using a silicon process. It comes in a 24-terminal land grid array (LGA) package and provides high isolation and low insertion loss from 100 MHz to 30 GHz.This broadband switch requires dual-supply voltages, +3.3 V and ?3.3 V, and provides complementary metal-oxide semiconductor (CMOS)/low voltage transistor-transistor logic (LVTTL) logic-compatible control.Applications Test instrumentation Microwave radios and very small aperture terminals (VSATs) Military radios, radars, and electronic counter measures (ECMs) Broadband telecommunications systems

The ADRF5549 is a dual-channel, integrated, RF front-end multichip module designed for time division duplexing (TDD) applications that operates from 1.8 GHz to 2.8 GHz. The ADRF5549 is configured in dual channels with a cascading, two-stage, low noise amplifier (LNA) and a high power, silicon single-pole, double-throw (SPDT) switch.In high gain mode, the cascaded two-stage LNA and switch offer a low noise figure of 1.4 dB and a high gain of 35 dB with an output third-order intercept point (OIP3) of 32 dBm typical.In low gain mode, one stage of the two-stage LNA is in bypass mode providing 17 dB of gain at a lower current of 35 mA. In power-down mode, the LNAs are turned off, and the device draws 12 mA.In transmit operation, when RF inputs are connected to a termination pin (TERM-ChA or TERM-ChB), the switch provides a low insertion loss of 0.6 dB and handles a long-term evolution (LTE) full lifetime average (9 dB peak to average ratio (PAR)) of 40 dBm and 43 dBm for a 9 dB PAR LTE single event (ApplicationsWireless InfrastructureTDD massive multiple input and multiple output (MIMO) and active antenna systemsTDD-based communication systems