The HMC386LP4(E) is a GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCO with integrated resonator, negative resistance device, varactor diode, and buffer amplifiers. Covering 2.6 to 2.8 GHz, the VCO?s phase noise performance is excellent over temperature, shock, vibration and process due to the oscillator?s monolithic structure. Power output is 5 dBm typical from a single supply of 3V @ 35mA. The voltage controlled oscillator is packaged in a low cost leadless QFN 4x4 mm surface mount package.APPLICATIONS Wireless Infrastructure Industrial Controls Test Equipment Military

The HMC437MS8G(E) is a low noise Divide-by-3 Static Divider utilizing InGaP GaAs HBT technology in a low cost 8 lead surface mount plastic package. This device operates from DC (with a square wave input) to 7 GHz input frequency from a single +5V DC supply. The low additive SSB phase noise of -153 dBc/Hz at 100 kHz offset helps the user maintain good system noise performance.APPLICATIONS UNII, Point-to-Point & VSAT Radios 802.11a & HiperLAN WLAN Fiber Optic Cellular/3G Infrastructure

The HMC440QS16G(E) is an integer-n synthesizer that incorporates a 10 to 1300 MHz digital Phase-Frequency Detector with 10 to 2800 MHz 5-Bit frequency counter (continuous division from 2 to 32) in miniature 16 lead QSOP plastic packages. It is intended for use in low phase noise offset-synthesizer app-lications.The HMC440QS16G(E) combines high frequency operation along with ultra low phase noise floor making possible synthesizers with wide loop bandwidth and low N resulting in fast settling and very low phase noise. When used in conjunction with a differential loop amplifier, the HMC440QS16G(E) generates an output voltage that can be used to phase lock a VCO to a reference oscillator.Applications Satellite Communication Systems? Point-to-Point Radios? Military Applications? Sonet Clock Generation Test Equipment

The HMC441LM1 is a broadband 7 to 15.5 GHz GaAs PHEMT MMIC Medium Power Amplifier in an SMT leadless chip carrier package. The amplifier provides 15 dB of gain, 21.5 dBm of saturated power at 27% PAE from a +5V supply voltage. An optional gate bias is provided to allow adjustment of gain, RF output power, and DC power dissipation. This 50 Ohm matched amplifier does not require any external components making it an ideal linear gain block or driver for HMC SMT mixers.Applications Point-to-Point Radios Point-to-Multi-Point Radios VSAT LO Driver for HMC Mixers Military EW & ECM

The HMC375LP3(E) is a high dynamic range GaAs PHEMT MMIC Low Noise Amplifier are ideal for GSM & CDMA cellular basestation front- end receivers operating between 1.7 and 2.2 GHz. This LNA has been optimized to provide 0.9 dB noise figure, 17 dB gain and +33 dBm output IP3 from a single supply of +5V @ 136mA. Input and output return losses are 14 dB typical with the LNA requiring minimal external components to optimize the RF input match, RF ground and DC bias.Applications GSM, GPRS & EDGE CDMA & W-CDMA DECT

The HMC870LC5 is a GaAs MMIC pHEMT Distributed Driver Amplifier packaged in a leadless 5x5 mm surface mount package which operates between DC and 20 GHz. The amplifier provides 17 dB of gain, 8Vp-p saturated output swing and features output swing cross point adjustment. Gain flatness is excellent at ?0.5 dB as well as very low additive RMS jitter of 300 fs for 10 Gbps operation.The HMC870LC5 provides Metro and Long Haul designers with scalable power dissipation for varying output drive requirements. (<0.4W at VOUT = 3.6VP-P and <1W at VOUT = 8.5VP-P) The HMC870LC5 has a very wide supply (VDD) operating range from +3.3V to +7V, and the RF I/Os are internally matched to 50 Ohms.APPLICATIONS 10 Gbps NRZ MZ &?Low V Modulator Driver 10 Gbps RZ Transmission 40 Gbps DQPSK Broadband Gain Block for?Test & Measurement Equipment Military & Space

The HMC409LP4(E) is a high efficiency GaAs InGaP HBT MMIC Power amplifier operating from 3.3 to 3.8 GHz. The amplifier is packaged in a low cost, leadless SMT package. Utilizing a minimum of external components the amplifier provides 31 dB of gain and +32.5 dBm of saturated power from a +5V supply voltage. The power control (Vpd) can be used for full power down or RF output power/current control. For +22 dBm OFDM output power (64 QAM, 54 Mbps), the HMC409LP4(E) achieves an error vector magnitude (EVM) of 2%, meeting WiMAX 802.16 linearity requirements.Applications WiMAX 802.16 Fixed Wireless Access Wireless Local Loop

The HMC510LP5(E) is a GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCO. The HMC510LP5(E) integrates resonators, negative resistance devices, varactor diodes and feature half frequency and divide-by-4 outputs. The VCO?s phase noise performance is excellent over temperature, shock, and process due to the oscillator?s monolithic structure. Power output is +13 dBm typical from a +5V supply voltage. The prescaler and RF/2 functions can be disabled to conserve current if not required. The voltage controlled oscillator is packaged in a leadless QFN 5?5 mm surface mount package, and requires no external matching components.APPLICATIONS Point-to-Point/Multi-Point Radio? Test Equipment & Industrial Controls? SATCOM? Military End-Use

The HMC512LP5(E) is a GaAs InGaP Herterojunction Bipolar Transistor (HBT) MMIC VCOs. The HMC512LP5(E) integrates resonators, negative resistance devices, varactor diodes and feature half frequency and divide-by-4 outputs. The VCO's phase noise performance is excellent over temperature, shock and process due to the oscillator's monolithic structure. Power output is +9 dBm typical from a +5V supply voltage. The prescaler and RF/2 functions can be disabled to conserve current if not required. The voltage cont-rolled oscillator is packaged in a leadless QFN 5x5 mm surface mount package, and requires no external matching components.APPLICATIONS Point-to-Point Radios? Point-to-Multi-Point Radios Test Equipment & Industrial Controls? SATCOM Military End-Use

The HMC584LP5(E) is a GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCO. The HMC584LP5(E) integrates resonators, negative resistance devices, varactor diodes and feature half frequency and divide-by-4 outputs. The VCO?s phase noise performance is excellent over temperature, shock, and process due to the oscillator?s monolithic structure. Power output is +10 dBm typical from a +5V supply voltage. The prescaler and RF/2 functions can be disabled to conserve current if not required. The voltage controlled oscillator is packaged in a leadless QFN 5x5 mm surface mount package, and requires no external matching components.APPLICATIONS Point to Point/Multipoint Radio Test Equipment & Industrial Controls SATCOM Military End-Use