The HMC327MS8G(E) is a high efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC Power amplifier which operates between 3 and 4 GHz. The amplifier is packaged in a low cost, surface mount 8 leaded package with an exposed base for improved RF and thermal performance. With a minimum of external components, the amplifier provides 21 dB of gain, +30 dBm of saturated power at 45% PAE from a +5V supply voltage. Power down capability is available to conserve current consumption when the amplifier is not in use.Applications Wireless Local Loop

The HMC372LP3 & HMC372LP3E are GaAs pHEMT MMIC Low Noise Amplifiers that are ideal for GSM & CDMA cellular basestation front-end receivers operating between 700 and 1000 MHz. The amplifier has been optimized to provide 1 dB noise figure, 15 dB gain and +34 dBm output IP3 from a single supply of +5V @ 100 mA. Input and output return losses are 25 and 14 dB respectively with the LNA requiring only four external components to optimize the RF Input match, RF ground and DC bias. For applications which require improved noise figure, please see the HMC617LP3(E).Applications GSM, GPRS & EDGE CDMA & W-CDMA Private Land Mobile Radio

The HMC535LP4(E) is a GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC PLO. The PLO?s phase noise performance is excellent over temperature, shock, and process due to the oscillator?s monolithic structure. Power output is +9 dBm typical from a +5V supply voltage.All functions (VCO, Op-Amp, PFD, Prescaler) are fully integrated while providing allowances for off-chip customer specific loop components. The PLO MMIC accepts a single-ended or a differential reference oscillator input signal in the range of 230 to 240 MHz, and a digital Lock Detector (LD) output is provided to confirm the status of the loop. The phase-locked oscillator is packaged in a leadless QFN 4?4 mm surface mount package.APPLICATIONS VSAT Radio? Point-to-Point & Point-to-Multi-Point Radio? Test Equipment & Industrial Controls? Military End-Use

The HMC515LP5(E) is a GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCO. The HMC515LP5(E) integrates resonators, negative resistance devices, varactor diodes and feature half frequency and divide-by-4 outputs. The VCO?s phase noise performance is excellent over temperature, shock, and process due to the oscillator?s monolithic structure. Power output is +10 dBm typical from a +5V supply voltage. The prescaler function can be disabled to conserve current if not required. The voltage controlled oscillator is packaged in a leadless QFN 5x5 mm surface mount package, and requires no external matching components.APPLICATIONS VSAT Radio? Point-to-Point/Multi-Point Radio? Test Equipment & Industrial Controls? Military End-Use

The HMC534LP5(E) is a GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCO. The HMC534LP5(E) integrates resonators, negative resistance devices, varactor diodes and feature half frequency and divide-by-4 outputs. The VCO?s phase noise performance is excellent over temperature, shock, and process due to the oscillator?s monolithic structure. Power output is +11 dBm typical from a +5V supply voltage. The prescaler and RF/2 functions can be disabled to conserve current if not required. The voltage controlled oscillator is packaged in a leadless QFN 5x5 mm surface mount package, and requires no external matching components.APPLICATIONS Point-to-Point/Multi-point Radio Test Equipment & Industrial Controls SATCOM Military End-Use

The HMC632LP5(E) is a GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCO. The HMC632LP5(E) integrates resonators, negative resistance devices, varactor diodes and features half frequency and divide-by-4 outputs. The VCO?s phase noise performance is excellent over temperature, shock, and process due to the oscillator?s monolithic structure. Power output is +9 dBm typical from a +5V supply voltage. The prescaler and RF/2 functions can be disabled to conserve current if not required. The voltage controlled oscillator is packaged in a leadless QFN 5x5 mm surface mount package, and requires no external matching components.APPLICATIONS Point to Point/Multipoint Radio Test Equipment & Industrial Controls SATCOM Military End-Use

The HMC734 is a GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCO. The HMC734 integrates a resonator, negative resistance device, varactor diode and features a divide-by-4 frequency output. The VCO's phase noise performance is excellent over temperature, shock, and process due to the oscillator's monolithic structure. Power output is +18 dBm typical from a +5V supply voltage. The prescaler function can be disabled to conserve current if not required. The voltage controlled oscillator is packaged in a leadless QFN 5?5 mm surface mount package, and requires no external matching components.APPLICATIONS Point-to-Multi-Point Radios Test Equipment & Industrial Controls SATCOM Military End-Use

The HMC608LC4 is a high dynamic range GaAspHEMT MMIC Medium Power Amplifier housed in aleadless ?Pb free? SMT package. The amplifier hastwo modes of operation: high gain mode (Vpd pinshorted to ground); and low gain mode (Vpd pin leftopen). The electrical specifications in the table beloware shown for the amplifier operating in high gainmode. Operating from 9.5 to 11.5 GHz, the amplifierprovides 29.5 dB of gain, +27.5 dBm of saturatedpower and 23% PAE from a +5V supply voltage.Noise figure is 6 dB while output IP3 is +33 dBm. TheRF I/Os are DC blocked and matched to 50 Ohmsfor ease of use. The HMC608LC4 eliminates theneed for wire bonding, allowing use of surface mountmanufacturing techniques.Applications? Point-to-Point Radios? Point-to-Multi-Point Radios? Military End-Use

The HMC542BLP4E is a broadband 6-bit GaAs IC digital attenuator with a CMOS compatible serial to parallel driver in low cost leadless surface mount package. This serial control digital attenuator incorporates off chip AC ground capacitors for near DC operation, making it suitable for a wide variety of RF and IF applications. Covering DC to 4 GHz, the insertion loss is 1.7 dB and the attenuator bit values are 0.5 (LSB), 1, 2, 4, 8, and 16 dB for a total attenuation of 31.5 dB. Attenuation accuracy is excellent at ?0.25 dB typical step error with an IIP3 of +50 dBm. Six bit serial control words are used to select each attenuation state. A single VCC bias of +5V is required.APPLICATIONS Cellular/PCS/3G Infrastructure ISM, MMDS, WLAN, WiMAX, & WiBro Microwave Radio & VSAT Test Equipment and Sensors

The HMC646LP2(E) is an SPDT switch in a leadless DFN surface mount plastic package for use in transmit / receive and LNA protection applications which require very low distortion and high power handling of up to 40 watts with less than 10% duty cycle. This robust switch can control signals from 100 - 2100 MHz* and is ideal for TD-SCDMA / 3G repeaters, PMR, automotive telematics, and satellite subscriber terminal applications. The design provides exceptional P0.1 dB of +46 dBm and +74 dBm IIP3 on the Transmit (Tx) port. The failsafe topology provides a low loss path from Tx to RFC, when no DC power is available.APPLICATIONS LNA Protection & T/R Switching TD-SCDMA / 3G Infrastructure Satellite Subscriber Terminals Private Mobile Radio & Public Safety Handsets Automotive Telematics