The HMC508LP5(E) is a GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCO. The HMC508LP5(E) integrates resonators, negative resistance devices, varactor diodes and feature a half frequency output. The VCO?s phase noise performance is excellent over temperature, shock, and process due to the oscillator?s monolithic structure. Power output is +15 dBm typical from a +5V supply. The voltage controlled oscillator is packaged in a leadless QFN 5x5 mm surface mount package, and requires no external matching components.APPLICATIONS VSAT Radio? Point-to-Point/Multi-Point Radio? Test Equipment & Industrial Controls? Military End-Use

The HMC514LP5(E) is a GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCO. The HMC514LP5(E) integrates resonators, negative resistance devices, varactor diodes and feature half frequency and divide-by-4 outputs. The VCO?s phase noise performance is excellent over temperature, shock, and process due to the oscillator?s monolithic structure. Power output is +7 dBm typical from a +3V supply voltage. The prescaler function can be disabled to conserve current if not required. The voltage controlled oscillator is packaged in a leadless QFN 5x5 mm surface mount package, and requires no external matching components.APPLICATIONS VSAT Radio Point-to-Point/Multi-Point Radio Test Equipment & Industrial Controls Military End-Use

The HMC530LP5(E) is a GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCOs. The HMC530LP5(E) integrates resonators, negative resistance devices, varactor diodes and feature half frequency and divide-by-4 outputs. The VCO's phase noise performance is excellent over temperature, shock and process due to the oscillator's monolithic structure. Power output is +11 dBm typical from a +5V supply voltage. The prescaler and RF/2 functions can be disabled to conserve current if not required. The voltage controlled oscillator is packaged in a leadless QFN 5x5 mm surface mount package, and requires no external matching components.APPLICATIONS Point-to-Point Radios Point-to-Multi-Point Radios Test Equipment & Industrial Controls SATCOM Military End-Use

The HMC453QS16G(E) is a high dynamic range GaAs InGaP Heterojunction Bipolar Transistor (HBT) 1.6 watt MMIC power amplifier operating between 0.4 and 2.2 GHz. Packaged in a miniature 16 lead QSOP plastic package, the amplifier gain is typically 21.5 dB at 0.4 GHz and 8 dB at 2.1 GHz. Utilizing a minimum number of external components and a single +5V supply, the amplifier output IP3 can be optimized to +47 dBm at 0.4 GHz or +51 dBm at 2.1 GHz. The power control (VPD) can be used for full power down or RF output power/current control. The high output IP3 and PAE make the HMC453QS16G(E) ideal power amplifier for Cellular/ PCS/3G, WLL, ISM and Fixed Wireless applications.Applications GSM, GPRS & EDGE? CDMA & W-CDMA? CATV/Cable Modem? Fixed Wireless & WLL

The HMC571LC5 is a compact GaAs MMIC I/Q downconverter in a leadless RoHS compliant SMT package. This device provides a small signal conversion gain of 9 dB with a noise figure of 3.5 dB and 18 dB of image rejection across the frequency band. The HMC571LC5 utilizes an LNA followed by an image reject mixer which is driven by an active x2 multiplier. The image reject mixer eliminates the need for a filter following the LNA, and removes thermal noise at the image frequency.I and Q mixer outputs are provided and an external 90? hybrid is needed to select the required sideband. The HMC571LC5 is a much smaller alternative to hybrid style image reject mixer downconverter assemblies, and it eliminates the need for wire bonding by allowing the use of surface mount manufacturing techniques.APPLICATIONS Point-to-Point Point-to-Multi-Point Radio Military Radar, EW & ELINT Satellite Communications

The HMC799LP3E is DC to 700 MHz Transimpedance amplifier designed for opto-electronic laser sensor applications, FDDI receivers and receiver systems employing optical to electrical conversion. This amplifier provides a single-ended output voltage that is proportional to an applied current at its input port. This current is typically provided by a photodiode. Operating from a single +5V supply, HMC799LP3E features very low input referred noise, and very large electrical input dynamic range exceeding 65 dB. 10 kOhm or 80 dB-Ohms transimpedance gain provides very good sensitivity at higher data rates.The output of HMC799LP3E is internally matched to 50 ohms. External matching is not necessary. The HMC799LP3E exhibits excellent gain and output power stability over temperature, while requiring a minimal number of external bias components.Applications Laser Sensor FDDI Receiver CATV FM Analog Receiver Wideband Gain Block Low Noise RF Applications

The HMC794LP3E is a SiGe BiCMOS low noise programmable frequency divider in a 3 ? 3mm leadless surface mount package. The circuit can be programmed to divide from N = 1 to N = 4 in the 200 MHz to 2 GHz input frequency range. The high level output power (up to 10 dBm) with a very low SSB phase noise and 50% duty cycle makes this device ideal for low noise clock generation, LO generation and LO drive applications. Configurable bias controls allow power minimization of up to 20%.APPLICATIONS LO Generation with Low Noise Floor Clock Generators Mixer LO Drive Military Applications Test Equipment Sensors

The HMC701LP6CE is a SiGe BiCMOS fractional-N frequency synthesizer. The synthesizer includes a 8GHz 16-bit RF N-Divider, a 24-bit delta-sigma modulator, a very low noise digital phase frequency detector (PFD), and a precision controlled charge pump. In addition the synthesizer supports an external step tuned VCO.The fractional synthesizer features an advanced delta-sigma modulator design that allows ultra-fine frequency step sizes. The synthesizer features the ability to alter both the phase-frequency detector (PFD) gain and the cycle slipping characteristics of the PFD. This feature can reduce the time to arrive at the new frequency by 50% vs. conventional PFDs. Ultra low in-close phase noise also allows wider loop bandwidths for faster frequency hopping.The synthesizer contains a built-in linear sweeper function, which allows it to perform frequency chirps with a wide variety of sweep times, polarities and dwells, all with an external or automatic sweep trigger.A General Purpose Output (GPO) bus supports the use of multiple VCOs. In addition the synthesizer has a number of auxiliary clock generation modes that can be accessed via the GPO.Applications Base Stations for Mobile Radio (GSM, PCS, DCS, CDMA, WCDMA) Wireless LANs, WiMax Communications Test Equipment CATV Equipment FMCW Sensors Automotive Radar Phased-Array Systems

The HMC851LC3C is a XOR/XNOR gate function designed to support data transmission rates of up to 28 Gbps, and clock frequencies as high as 28 GHz. The HMC851LC3C also features an output level control pin, VR, which allows for loss compensation or for signal level optimization.All input signals to the HMC851LC3C are terminated with 50 Ohms to ground on-chip, and may be either AC or DC coupled. The differential outputs of the HMC851LC3C may be either AC or DC coupled. Outputs can be connected directly to a 50 Ohm to ground terminated system, while DC blocking capacitors may be used if the terminating system is 50 Ohms to a nonground DC voltage. The HMC851LC3C operates from a single -3.3V DC supply, and is available in a ceramic RoHS compliant 3x3 mm SMT package.APPLICATIONS RF ATE Applications Broadband Test & Measurement Serial Data Transmission?up to 28 Gbps

The HMC789ST89E is a high linearity GaAs InGaP HBT gain block MMIC operating from 0.7 to 2.8 GHz and packaged in an industry standard SOT89 package. Utilizing a minimum number of external components and a single +5V supply, the amplifier output IP3 can be optimized to +45 dBm. The high output IP3 and high gain make the HMC789ST89E ideal for use in PA driver & pre-driver applications in Cellular/4G and Fixed Wireless.Applications Cellular/4G Fixed Wireless & WLAN CATV, Cable Modem & DBS Microwave Radio & Test Equipment IF & RF Applications