The ADL5521 is a high performance GaAs pHEMT low noise amplifier. It provides high gain and low noise figure for single-downconversion IF sampling receiver architectures as well as direct-downconversion receivers.The ADL5521 provides a high level of integration by incorporating the active bias and dc blocking capacitors, making it very easy to use while not sacrificing design flexibility.The ADL5521 is easy to tune, requiring only a few external components. The device can support operation from 3 V to 5?V, and the current draw can be adjusted with the external bias resistor for applications requiring low power consumption.The ADL5521 comes in a compact, thermally enhanced, 3 mm ? 3 mm LFCSP and operates over the temperature range of ?40?C to +85?C.A fully populated evaluation board is also available.

The ADL5534 contains two broadband, fixed-gain, linear amplifiers and operates at frequencies up to 500 MHz. The device can be used in a wide variety of equipment, including cellular, satellite, broadband, and instrumentation equipment.The ADL5534 has a fixed gain of 20 dB, which is stable over frequency, temperature, power supply, and from device-to-device. The amplifiers are single-ended and internally matched to 50 ?. Only input/output ac-coupling capacitors, power supply decoupling capacitors, and an external bias inductor are required for operation of each amplifierThe ADL5534 is fabricated on a GaAs HBT process. The device is packaged in a 16-lead 5 mm ? 5 mm LFCSP that uses an exposed paddle for excellent thermal impedance. The ADL5534 consumes 98 mA of current per amplifier on a single 5 V supply, and is fully specified for operation from ?40?C to +85?C.A similar amplifier, ADL5531 (available from Analog Devices, Inc.) is the 20 dB gain single-channel version. Fully populated evaluation boards for both the ADL5531 and ADL5534 are available.

The ADL5535 is a 16 dB linear amplifier that operates at frequencies up to 1 GHz. The device can be used in a wide variety of cellular, CATV, military, and instrumentation equipment.The ADL5535 provides the highest dynamic range available from an internally matched IF gain block. This is accomplished by providing extremely low noise figures and very high OIP3 specifications simultaneously across the entire 1 GHz frequency range. The ADL5535 also provides extremely flat gain and P1dB over frequency, which are stable over temperature, power supply, and from device to device.The device is internally matched to 50 ? at the input and output, making the ADL5535 very easy to implement in a wide variety of applications. Only input/output ac coupling capacitors, power supply decoupling capacitors, and an external inductor are required for operation.The ADL5535 is fabricated on a GaAs HBT process and has an ESD rating of ?2 kV (Class 2). The device is assembled in an MSL-1 rated SOT-89 package that uses an exposed paddle for excellent thermal impedance.The ADL5535 consumes only 97 mA on a single 5 V supply and is fully specified for operation from ?40?C to +85?C.The ADL5535 is also pin-compatible with the 20 dB gain ADL5536. Fully populated evaluation boards are available for each amplifier.

The ADL5544 is a single-ended RF/IF gain block amplifier that provides broadband operation from 30 MHz to 6 GHz. The ADL5544 provides over 34 dBm of OIP3 using only 55 mA from a 5 V supply.The ADL5544 provides a gain of 17 dB, which is stable over frequency, temperature, power supply, and from device to device. The amplifier is offered in the industry-standard SOT-89 package and is internally matched to 50 ? at the input and output, making the ADL5544 very easy to implement in a wide variety of applications. The only external components required are the input/output ac coupling capacitors, power supply decoupling capacitors, and dc bias inductor.The ADL5544 is fabricated on an InGaP HBT process and has a high ESD rating of ?1.5 kV (Class 1C). The ADL5544 is also fully specified for operation across the wide temperature range of ?40?C to +105?C. A fully populated RoHS-compliant evaluation board is available.

The ADL5561 is a high performance differential amplifier optimized for RF and IF applications. The amplifier offers low noise of 2.1 nV/?Hz and excellent distortion performance over a wide frequency range, making it an ideal driver for high speed 8-bit to 16-bit analog-to-digital converters (ADCs).The ADL5561 provides three gain levels of 6 dB, 12 dB, and 15.5 dB through a pin-strappable configuration. For the single-ended input configuration, the gains are reduced to 5.6 dB, 11.1 dB, and 14.1 dB. Using an external series input resistor expands the amplifier gain flexibility and allows for any gain selection from 0 dB to 15.5 dB.The quiescent current of the ADL5561 is typically 40 mA and, when disabled, consumes less than 3 mA, offering excellent input-to-output isolation.The device is optimized for wideband, low distortion performance. These attributes, together with its adjustable gain capability, make this device the amplifier of choice for general-purpose IF and broadband applications where low distortion, noise, and power are critical. This device is optimized for the best combination of slew speed, bandwidth, and broadband distortion. These attributes allow it to drive a wide variety of ADCs and make it ideally suited for driving mixers, pin diode attenuators, SAW filters, and multi-element discrete devices.Fabricated on the Analog Devices, Inc., high speed SiGe process, the ADL5561 is supplied in a compact 3 mm ? 3 mm, 16-lead LFCSP package and operates over the temperature range of ?40?C to +85?C.Applications Differential ADC drivers Single-ended-to-differential conversion RF/IF gain blocks SAW filter interfacing

The ADL5562 is a high performance differential amplifier optimized for RF and IF applications. The amplifier offers low noise of 2.1 nV/?Hz and excellent distortion performance over a wide frequency range, making it an ideal driver for high speed 8-bit to 16-bit ADCs.The ADL5562 provides three gain levels of 6 dB, 12 dB, and 15.5 dB through a pin-strappable configuration. For the single-ended input configuration, the gains are reduced to 5.6 dB, 11.1 dB, and 14.1 dB. Using an external series input resistor expands the amplifier gain flexibility and allows for any gain selection from 0 dB to 15.5 dB.The quiescent current of the ADL5562 is typically 80 mA and, when disabled, consumes less than 3 mA, offering excellent input-to-output isolation.The device is optimized for wideband, low distortion performance. These attributes, together with its adjustable gain capability, make this device the amplifier of choice for general-purpose IF and broadband applications where low distortion, noise, and power are critical. This device is optimized for the best combination of slew speed, bandwidth, and broadband distortion. These attributes allow it to drive a wide variety of ADCs and make it ideally suited for driving mixers, pin diode attenuators, SAW filters, and multielement discrete devices.Fabricated on an Analog Devices, Inc., high speed SiGe process, the ADL5562 is supplied in a compact 3 mm ? 3 mm, 16-lead LFCSP package and operates over the temperature range of ?40?C to + 85?C.APPLICATIONS Differential ADC drivers Single-ended to differential conversion RF/IF gain blocks SAW filter interfacing

The ADL5604 is a very broadband RF driver amplifier that operates over the wide frequency range of 700 MHz to 2700 MHz. The ADL5604 is also highly linear and has a very low power consumption, enabling the driver to be packaged in a compact 16-lead, 4 mm ? 4 mm LFCSP.For thermal management, the ADL5604 uses an exposed paddle, and the upper and lower pins of the package are all grounded, which gives the ADL5604 excellent thermal transfer characteristics.The ADL5604 can be quickly powered down or up in 50 ns for applications requiring TX shutdown, such as TDD systems.The ADL5604 operates on a single 5 V supply voltage and draws only 318 mA of supply current.The driver is fabricated on a GaAs HBT process and operates from ?40?C to +85?C. A fully populated evaluation board is available.

The ADL5725 is a narrow-band, high performance, low noise amplifier (LNA) targeting microwave radio link receiver designs. The monolithic silicon germanium (SiGe) design is optimized for microwave radio link bands ranging from 17.7 GHz to 19.7 GHz. The unique design offers a single-ended 50 ? input impedance and provides a 100 ? balanced differential output that is ideal for driving Analog Devices, Inc., differential downconverters and radio frequency (RF) sampling analog-to-digital converters (ADCs). This low noise amplifier provides noise figure performance that, in the past, required more expensive three-five (III-V) compounds process technology to achieve.The ADL5721 and ADL5723 to ADL5726 family of narrow-band LNAs are each packaged in a tiny, thermally enhanced, 2.00 mm ? 2 mm LFCSP package. The ADL5721 and ADL5723 to ADL5726 family operates over the temperature range of ?40?C to +85?C.Applications Point to point microwave radios Instrumentation Satellite communications (SATCOM) Phased arrays

The ADL5802 uses high linearity, double-balanced, active mixer cores with integrated LO buffer amplifiers to provide high dynamic range frequency conversion from 100 MHz to 6 GHz. The mixers benefit from a proprietary linearization architecture that provides enhanced input IP3 performance when subject to high input levels. A bias adjust feature allows the input linearity, SSB noise figure, and dc current to be optimized using a single control pin. The high input linearity allows the device to be used in demanding cellular applications where in-band blocking signals may otherwise result in degradation in dynamic performance. The balanced active mixer arrangement provides superb LO to RF and LO to IF leakage, typically better than ?30 dBm.The IF outputs are designed for a 200 ? source impedance and provide a typical voltage conversion gain of 7.6 dB when loaded into a 200 ? load.The ADL5802 is fabricated using a SiGe high performance IC process. The device is available in a compact 4 mm ? 4 mm, 24-lead LFCSP package and operates over a ?40?C to +85?C temperature range. An evaluation board is also available.APPLICATIONSCellular base station receiversMain and diversity receiver designsRadio link downconvertersData Sheet, Rev 0, 11/2009

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