The HMC525ALC4 is a compact gallium arsenide (GaAs), monolithic microwave integrated circuit (MMIC), in phase quadrature (I/Q) mixer in a 24-terminal, RoHS compliant, ceramic leadless chip carrier (LCC) package. The device can be used as either an image reject mixer or a single sideband (SSB) upconverter. The mixer uses two standard double balanced mixer cells and a 90? hybrid fabricated in a GaAs, metalsemiconductor field effect transistor (MESFET) process. The HMC525ALC4 is a much smaller alternative to a hybrid style image reject mixer and a SSB upconverter assembly. The HMC525ALC4 eliminates the need for wire bonding, allowing the use of surface-mount manufacturing techniques. Applications Microwave and very small aperture terminal radios Test equipment Point to point radios Military electronic warfare; electronic countermeasure; and command, control, communications, and intelligence

The HMC554ALC3B is a general-purpose, double balanced mixer in a leadless RoHS compliant leadless chip carrier (LCC) package that can be used as an upconverter or downconverter between 10 GHz and 20 GHz. This mixer is fabricated in a gallium arsenide (GaAs) metal semiconductor field effect transistor (MESFET) process and requires no external?components or matching circuitry. The HMC554ALC3B provides excellent local oscillator (LO) to RF and LO to intermediate frequency (IF) isolation due to optimized balun structures. The RoHS compliant HMC554ALC3B eliminates the need for wire bonding and is compatible with high volume surface-mount manufacturing techniques.Applications Microwave and very small aperture terminal (VSAT) radios Test equipment Military electronic warfare (EW); electronic countermeasure (ECM); and command, control, communications and intelligence (C3I)

The HMC5805ALS6 is a GaAs pHEMT MMIC Distributed Power Amplifier which operates between DCand 40 GHz. The amplifier provides 11.5 dB of gain,29 dBm output IP3 and +24 dBm of output power at1 dB gain compression while requiring 175 mA froma +10 V supply. The HMC5805ALS6 is ideal for EW,ECM, Radar and test equipment applications. TheHMC5805ALS6 amplifier I/Os are internally matchedto 50 Ohms and the 6x6 mm SMT package is wellsuited for automated assembly techniques.Applications Test instrumentation Microwave radio and VSAT Military and space Telecom infrastructure Fiber optics

The HMC6147ALC5A is a compact GaAs MMIC I/Q downconverter in a leadless RoHS compliant SMT package. This device provides a small signal conversion gain of 13 dB with 25 dBc of sideband rejection. The HMC6147ALC5A utilizes a low noise amplifier to drive the I/Q mixer where the LO is driven by a X2 multiplier. IF1 and IF2 mixer inputs are provided and an external 90? hybrid is needed to select the required sideband.The I/Q mixer topology reduces the need for filtering of the unwanted sideband. The HMC 6147ALC5A is a much smaller alternative to hybrid style single sideband converter assemblies and it eliminates the need for wire bonding by allowing the use of surface mount manufacturing techniques.Applications Point-to-Point & Point-to-Multi-Point Radio Military Radar, EW & ELINT Satellite Communications Sensors??

The HMC647ALP6E is a 6-bit digital phase shifter which is rated from 2.5 to 3.1 GHz, providing 360 degrees of phase coverage, with a LSB of 5.625 degrees. The HMC647ALP6E features very low RMS phase error of 1.5 degrees and extremely low insertion loss variation of ?0.4 dB across all phase states. This high accuracy phase shifter is controlled with positive control logic of 0/+5V The HMC647ALP6E is housed in a compact 6x6 mm plastic leadless SMT package and is internally matched to 50 Ohms with no external components.APPLICATIONS EW Receivers Weather & Military Radar Satellite Communications Beamforming Modules Phase Cancellation

The HMC6505A is a compact gallium arsenide (GaAs),pseudomorphic (pHEMT), monolithic microwave integratedcircuit (MMIC) upconverter in a RoHS compliant package thatoperates from 5.5 GHz to 8.6 GHz. This device provides a smallsignal conversion gain of 15 dB with 22 dBc of sidebandrejection. The HMC6505A uses a variable gain amplifier (VGA)preceded by an in-phase and quadrature (I/Q) mixer that isdriven by an active local oscillator (LO). The IF1 and IF2 mixerinputs are provided, and an external 90? hybrid is needed toselect the required sideband. The I/Q mixer topology reducesthe need for filtering of unwanted sideband. The HMC6505Ais a smaller alternative to hybrid style single sideband (SSB)upconverter assemblies, and it eliminates the need for wirebonding by allowing the use of surface-mount manufacturingtechniques.The HMC6505A is available in 5 mm ? 5 mm, 32-terminalleadless chip carrier (LCC) package and operates over a ?40?Cto +85?C temperature range. An evaluation board for theHMC6505A is also available upon request. Applications Point to point and point to multipoint radios Military radars, electronic warfare (EW), and electronic intelligence (ELINT) Satellite communications Sensors

The HMC784AMS8GE is a high power SPDT switch inan 8-lead MSOPG package for use in transmit-receiveapplications which require very low distortion athigh input signal power levels. The device can controlsignals from DC to 4 GHz. The design providesexceptional intermodulation performance; > +60 dBmthird order intercept at +5V bias. RF1 and RF2 arereflective shorts when ?OFF?. On-chip circuitry allowssingle positive supply operation from +3 Vdc to +8 Vdcat very low DC current with control inputs compatiblewith CMOS logic families.Applications Cellular/4G Infrastructure WiMAX, WiBro & Fixed Wireless Automotive Telematics Mobile Radio Test Equipment

The HMC798ALC4 is a 24 GHz to 34 GHz subharmonically pumped (?2) MMIC mixer with an integrated LO amplifier housed in a leadless, RoHS compliant LCC package. The HMC798ALC4 can be used as an upconverter or downconverter between 24 GHz and 34 GHz. The 2 ? LO to radio frequency (RF) isolation is typically 30 dB in a 24 GHz to 30 GHz frequency range and 36 dB in a 30 GHz to 34 GHz frequency range, eliminating the need for additional filtering. The LO amplifier is single bias at a 5 V dc with a typical 4 dBm LO drive level requirement The HMC798ALC4 eliminates the need for wire bonding, allowing use of surface-mount technology (SMT) manufacturing techniques.Applications Microwave and very small aperture terminal (VSAT) radios Test equipment Point to point radios Satellite communications (SATCOM) Military electronic warfare (EW), electronic countermeasure (ECM), and command, control, communications and intelligence (C3I)

The HMC812ALC4 is an absorptive Voltage Variable Attenuator (VVA) which operates from 5 - 30 GHz and is ideal in designs where an analog DC control signal must be used to control RF signal levels over a 30 dB amplitude range. It features two shunt-type attenuators which are controlled by two analog voltages, Vctrl1 and Vctrl2. Optimum linearity performance of the attenuator is achieved by first varying Vctrl1 of the 1st attenuation stage from -5V to 0V with Vctrl2 fixed at -5V. The control voltage of the 2nd attenuation stage, Vctrl2, should then be varied from -5V to 0V, with Vctrl1 fixed at 0V. The HMC812ALC4 is housed in a RoHS compliant 4x4 mm QFN leadless ceramic package.Furthermore, if the Vctrl1 and Vctrl2 pins are connected together it is possible to achieve the full analog attenuation range with only a small degradation in input IP3 performance. Applications include AGC circuits and temperature compensation of multiple gain stages in microwave point-to-point and VSAT radios.Applications Point-to-Point Radio VSAT Radio Test Instrumentation Microwave Sensors Military, ECM & Radar

The HMC815B is a compact gallium arsenide (GaAs),pseudomorphic high electron mobility transistor (pHEMT),monolithic microwave integrated circuit (MMIC) upconverterin a RoHS compliant package that operates from 21 GHz to27 GHz. This device provides a small signal conversion gain of12 dB and a sideband rejection of 20 dBc. The HMC815Butilizes a driver amplifier proceeded by an in phase/quadrature(I/Q) mixer where the LO is driven by an active 2? multiplier.IF1 and IF2 mixer inputs are provided, and an external 90?hybrid is needed to select the required sideband. The I/Q mixertopology reduces the need for filtering of unwanted sideband.The HMC815B is a smaller alternative to hybrid style singlesideband (SSB) downconverter assemblies, and it eliminates theneed for wire bonding by allowing the use of surface-mountmanufacturing techniques.The HMC815B is available in 4.90 mm ? 4.90 mm, 32-terminalceramic LCC package and operates over the ?40?C to +85?Ctemperature range. An evaluation board for the HMC815B isalso available upon request.Applications Point to point and point to multipoint radios Military radars, electronic warfare, and electronic intelligence Satellite communications Sensors