The ADL5724 is a narrow-band, high performance, low noise amplifier (LNA) targeting microwave radio link receiver designs. The monolithic silicon germanium (SiGe) design is optimized for microwave radio link bands ranging from 12.7 GHz to 15.4 GHz. The unique design offers a single-ended 50 ? input impedance and provides a 100 ? balanced differential output that is ideal for driving Analog Devices, Inc., differential downconverters and radio frequency (RF) sampling analog-to-digital converters (ADCs). This LNA provides noise figure performance that, in the past, required more expensive three-five (III-V) compounds process technology to achieve.The ADL5721 and ADL5723 to ADL5726 family of narrow-band LNAs are each packaged in a tiny, thermally enhanced, 2.00 mm ? 2.00 mm LFCSP package. The ADL5721 and ADL5723 to ADL5726 family operates over the temperature range of ?40?C to +85?C.Applications Point to point microwave radios Instrumentation Satellite communications (SATCOM) Phased arrays

The ADL5726 is a narrow-band, high performance, low noise amplifier (LNA) targeting microwave radio link receiver designs. The monolithic silicon germanium (SiGe) design is optimized for microwave radio link bands ranging from 21.2 GHz to 23.6 GHz. The unique design offers a single-ended 50 ? input impedance and provides a 100 ? balanced differential output that is ideal for driving Analog Devices, Inc., differential downconverters and radio frequency (RF) sampling analog-to-digital converters (ADCs). This LNA provides noise figure performance that, in the past, required more expensive three-five (III-V) compounds process technology to achieve.The ADL5721 and ADL5723 to ADL5726 family of narrow-band LNAs are each packaged in a tiny, thermally enhanced, 2.00 mm ? 2.00 mm LFCSP package. The ADL5721 and ADL5723 to ADL5726 family operates over the temperature range of ?40?C to +85?C.Applications Point to point microwave radios Instrumentation Satellite communications (SATCOM) Phased arrays

The ADL8142 is a gallium arsenide (GaAs), monolithic microwave integrated circuit (MMIC), pseudomorphic high electron mobility transistor (pHEMT), low noise wideband amplifier that operates from 23 GHz to 31 GHz. The ADL8142 provides a typical gain of 27 dB, a 1.6 dB typical noise figure, and a typical output third-order intercept (OIP3) of 29 dBm at 27 GHz to 31 GHz, requiring only 25 mA from a 2 V supply voltage. Note that the OIP3 can be improved with larger drain currents. The ADL8142 also features inputs and outputs that are ac-coupled and internally matched to 50 ?, making it ideal for high capacity microwave radio applications.The ADL8142 is housed in a RoHS-compliant, 2 mm ? 2 mm, 8-lead LFCSP.APPLICATIONSSatellite communicationTelecommunicationsCivilian radar

The ADL8150 is a self biased gallium arsenide (GaAs), monolithic microwave integrated circuit (MMIC), heterojunction bipolar transistor (HBT), low phase noise amplifier that operates from 6 GHz to 14 GHz. The amplifier provides 12 dB of typical signal gain, 18 dBm output power at 1 dB gain compression (OP1dB), and a typical output third-order intercept (OIP3) of 30 dBm. The amplifier requires 74 mA from a 5 V collector supply voltage. The ADL8150 also features inputs and outputs (I/Os) that are internally matched to 50 ?, and facilitates integration into multichip modules (MCMs). Note that throughout the data sheet, multifunction pins, such as RFOUT/VCC, are referred to either by the entire pin name or by a single function of the pin, for example, RFOUT, when only that function is relevant.Applications Military and space Test instrumentation Communications

The ADM7151 is a low dropout (LDO) linear regulator that operates from 4.5 V to 16 V and provides up to 800 mA of output current. Using an advanced proprietary architecture, it provides high power supply rejection (>90 dB from 1 kHz to 1 MHz), ultralow noise (1.7 nV?Hz from 10 kHz to 1 MHz), and excellent line and load transient response with a 10 ?F ceramic output capacitor. The output voltage can be set to any voltage between 1.5 V and 5.1 V with two resistors.The ADM7151 is available in two models that optimize power dissipation and PSRR performance as a function of input and output voltage. See Table 6 and Table 7 for selection guides.The ADM7151 regulator output noise is 1.0 ?V rms from 100 Hz to 100 kHz, and the noise spectral density is 1.7 nV/?Hz from 10 kHz to 1 MHz.The ADM7151 is available in 8-lead, 3 mm ? 3 mm LFCSP and 8-lead SOIC packages, making it not only a very compact solution, but also providing excellent thermal performance for applications requiring up to 800 mA of output current in a small, low profile footprint.ADM7151 is an adjustable Vout device. For fixed Vout version of the ADM7151, see the ADM7150.Applications Regulated power noise sensitive applications RF mixers, phase-locked loops (PLLs), voltage-controlled oscillators (VCOs), and PLLs with integrated VCOs Clock distribution circuits Ultrasound and other imaging applications High speed RF transceivers High speed, 16-bit or greater ADCs Communications and infrastructure Cable digital-to-analog converter (DAC) drivers

The ADM8641 and ADM8642 are simple voltage detectorssuitable for use in general-purpose applications. The ultralowpower consumption of these devices makes them suitable forpower efficiency sensitive systems, such as battery-poweredportable devices and energy meters.The factory preset detection thresholds from 0.5 V to 4.63 Vwith ?1.2% accuracy over the full temperature range enable thedevices to monitor the node of interest accurately with directcontact. The DIS input lets the user hold the output lowregardless of the state of the input. Not all device options arereleased for sale as standard models. See the Ordering Guidesection for full information.The ADM8641 monitors the voltage using the VCC pin. Theseparate supply pin on the ADM8642 allows it to have a lowerdetection threshold down to 0.5 V.The ADM8641 and ADM8642 are available in a 6-ball, 1.46 mm ?0.96 mm WLCSP. These devices are specified over the ?40?C to+85?C temperature range.Applications Portable/battery-operated equipment Microprocessor systems Energy metering Energy harvesting

The ADM8845 uses charge pump technology to provide thepower required to drive up to six LEDs. The LEDs are used forbacklighting a color LCD display, having regulated constant current for uniform brightness intensity. The main display canhave up to four LEDs, and the sub display can have one or two LEDs. The digital CTRL1 and CTRL2 input control pins controlthe shutdown operation and the brightness of the main and subdisplays.To maximize power efficiency, the charge pump can operate ina 1?, 1.5?, or 2? mode. The charge pump automaticallyswitches between 1?/1.5?/2? modes, based on the input voltage,to maintain sufficient drive for the LED anodes at the highestpower efficiency. Improved brightness matching of the LEDs is achieved by afeedback pin to sense individual LED current with a maximum matching accuracy of 1%.Applications Cellular phones with main and sub displays White LED backlighting Camera flash/strobes and movie lights Micro TFT color displays DSC PDAs

The ADMV1018 is a silicon germanium (SiGe), microwave, upconverter and downconverter optimized for 5G radio designs operating in the 24.0 GHz to 29.5 GHz frequency range.The upconverter offers two modes of frequency translation. The device is capable of direct conversion to RF from differential baseband inphase/quadrature (I/Q) input signals, as well as single-sideband upconversion from complex intermediate frequency (IF) inputs. The differential baseband I/Q input path can be disabled, and modulated, single-ended, complex IF signals from 2 GHz to 9.5 GHz can be fed to the IF path. These signals can then be upconverted to 24.0 GHz to 29.5 GHz while rejecting the unwanted sideband by typically greater than 25 dBc. The serial port interface (SPI) provides adjustment of the quadrature phase to allow optimum sideband rejection. In addition, the SPI interface allows powering down the output envelope detector to reduce power consumption when carrier feedthrough optimization is not necessary.The downconverter offers two modes of frequency translation. The device is capable of direct quadrature demodulation to differential baseband I/Q output signals, as well as image rejection downconversion to a single-ended complex IF output carrier frequency. The I/Q baseband output common-mode voltage is programmable between 0.75 V and 2.15 V. The SPI provides fine adjustment of the quadrature phase to optimize I/Q demodulation performance. Alternatively, the baseband I/Q outputs can be disabled, and the I/Q signals can be passed through an on-chip, active balun to provide two, single-ended, complex IF outputs between 2 GHz and 9.5 GHz. When the device is used as an image rejecting downconverter, the unwanted image term is typically rejected to greater than 25 dBc. The ADMV1018 offers a square law power detector to allow monitoring of the power levels at the mixer inputs. The detector output provides closed-loop control of the RF digital step attenuator (DSA) via an external automatic gain control (AGC) loop.The ADMV1018 upconverter and downconverter is housed in a compact, thermally enhanced, 9 mm ? 8 mm, land grid array (LGA) package. This LGA package enables the ability to heat-sink the ADMV1018 from the top of the package for the most efficient thermal heatsinking. The ADMV1018 operates over the ?40?C to +95?C case temperature range.Throughout the figures in the data sheet, Rx means receiver and Tx means transmitter.APPLICATIONS5G applicationsPoint to point microwave radiosRadar and electronic warfare systemsInstrumentation and automatic test equipment (ATE)

The ADMV1139 is an silicon on isolator (SOI), microwave, upconverter and downconverter optimized for 5G radio designs operating in the 37 GHz to 48.2 GHz frequency range.Both upconverters and downconverters offer two modes of frequency translation. One mode is conversion from and/or to complex intermediate frequency (IF) signals, which then pass through an on-chip 90? IF hybrid, known as IF mode.The other mode is a direct conversion from and/or to single-ended or differential baseband inphase/quadrature (I/Q) inputs and outputs, known as baseband mode. The I/Q baseband output common-mode voltage is programmable between 0 V and 1.5 V. The SPI provides fine adjustment of the quadrature phase to optimize I/Q demodulation performance.When the device is used as an image rejecting downconverter, the unwanted image term is typically rejected to 26 dBc, before calibration. The ADMV1139 offers a square law power detector to allow monitoring of the power levels at the mixer inputs of the downconverter.The RF receive input, RF transmit output, and local oscillator (LO) interface are all single-ended and matched to 50 ?. The on-chip RF switch provides the option to combine the transmit and receive RF ports together for time division duplex (TDD) applications.The serial port interface (SPI) provides adjustment of the quadrature phase to allow optimum sideband rejection. In addition, the SPI allows powering down the output envelope detector to reduce power consumption when carrier feedthrough optimization is not necessary.The ADMV1139 upconverter and downconverter is housed in a compact, thermally enhanced, 6 mm ? 6.5 mm, ball grid array (BGA) package. This BGA package enables the ability to heat sink the ADMV1139 from the top of the package for the most efficient thermal heat sinking. The ADMV1139 operates over the ?40?C to +95?C TC range.APPLICATIONSMillimeter-wave 5G applicationsPoint to point microwave radiosRadar and electronic warfare systemsInstrumentation and automatic test equipment (ATE)

The ADMV1139 is an silicon on isolator (SOI), microwave, upconverter and downconverter optimized for 5G radio designs operating in the 37 GHz to 48.2 GHz frequency range.Both upconverters and downconverters offer two modes of frequency translation. One mode is conversion from and/or to complex intermediate frequency (IF) signals, which then pass through an on-chip 90? IF hybrid, known as IF mode.The other mode is a direct conversion from and/or to single-ended or differential baseband inphase/quadrature (I/Q) inputs and outputs, known as baseband mode. The I/Q baseband output common-mode voltage is programmable between 0 V and 1.5 V. The SPI provides fine adjustment of the quadrature phase to optimize I/Q demodulation performance.When the device is used as an image rejecting downconverter, the unwanted image term is typically rejected to 26 dBc, before calibration. The ADMV1139 offers a square law power detector to allow monitoring of the power levels at the mixer inputs of the downconverter.The RF receive input, RF transmit output, and local oscillator (LO) interface are all single-ended and matched to 50 ?. The on-chip RF switch provides the option to combine the transmit and receive RF ports together for time division duplex (TDD) applications.The serial port interface (SPI) provides adjustment of the quadrature phase to allow optimum sideband rejection. In addition, the SPI allows powering down the output envelope detector to reduce power consumption when carrier feedthrough optimization is not necessary.The ADMV1139 upconverter and downconverter is housed in a compact, thermally enhanced, 6 mm ? 6.5 mm, ball grid array (BGA) package. This BGA package enables the ability to heat sink the ADMV1139 from the top of the package for the most efficient thermal heat sinking. The ADMV1139 operates over the ?40?C to +95?C TC range.APPLICATIONSMillimeter-wave 5G applicationsPoint to point microwave radiosRadar and electronic warfare systemsInstrumentation and automatic test equipment (ATE)