ONET8551TYS4

Texas Instruments ONET8551TYS4

LM118H/NOPB

Texas Instruments LM118H/NOPB

LM675T

Texas Instruments LM675T

INA115AU/1K

Texas Instruments INA115AU/1K

6572A

National Semiconductor 6572A

LM4951A

National Semiconductor LM4951A

Renesas Electronics Corporation C-811G

H7826

ROHM Semiconductor H7826

Analog Devices Inc. LT1638CDD#PBF

Analog Devices Inc. LTC1100CN8#PBF

Price $7.75
RoHS Compliant Yes No Yes Not Compliant Not Compliant Compliant Compliant
Lead Status No Yes No Yes
DJ(Typ)(ps) 6
Data Rate(Gbps) 11.3
In-rms(Typ)(nA) 900
ICC(Max)(mA) 40
DJ ovl(Typ)(ps) 10
Iin,ovl(Min)(mA) 4
Number of Channels(#) 1 1 1 1
Z(Typ)(Ohm) 10000
Package Group DIESALE,WAFERSALE TO-99 TO-220 SOIC
BW(Typ)(GHz) 9
VCC(V) 3.3
Approx. Price (US$) 1.70 | 1ku 2.44 | 1ku 4.20 | 1ku
ICC(Nom)(mA) 28
Operating Temperature Range(C) -40 to 100 -55 to 125 0 to 70 -40 to 85
Output Current(Typ)(mA) 21 4000
Iq per channel(Typ)(mA) 5 18
Architecture Bipolar Bipolar
Vos (Offset Voltage @ 25C)(Max)(mV) 4 10
Vn at 1kHz(Typ)(nV/rtHz) 15
Rating Military Catalog Catalog
Slew Rate(Typ)(V/us) 70 8
Package Size mm2 mm2 mm2
Total Supply Voltage(Min)(+5V=5, +/-5V=10) 10 10
IIB(Max)(pA) 250000
GBW(Typ)(MHz) 15 5.5
CMRR(Typ)(dB) 100 90
Offset Drift(Typ)(uV/C) 3 25
Total Supply Voltage(Max)(+5V=5, +/-5V=10) 40 60
CMRR(Min)(dB) 80 70 110
Iq per channel(Max)(mA) 8 50
Additional Features Vos Adj Pin Decompensated
Rail-to-Rail No
Input Bias Current(Max)(pA) 2000000
Noise at 0.1 Hz - 10 Hz(Typ)(uVpp) 0.4
Vs(Max)(V) 36
Bandwidth at Min Gain(Typ)(MHz) 1
Gain Error (+/-)(Max)(%) 2
Gain Non-Linearity (+/-)(Max)(%) 0.002
Gain(Max)(V/V) 10000
Input Offset Drift (+/-)(Max)(uV/Degrees Celsius) 0.25
Input Offset (+/-)(Max)(uV) 50
Noise at 1kHz(Typ)(nV/rt(Hz)) 11
Gain(Min)(V/V) 1
Iq(Typ)(mA) 2.2
Gain(V/V) 1 to 10000
Bandwidth at Min Gain(Min)(MHz) 10
Vs(Min)(V) 4.5
Input Bias Current (+/-)(Max)(nA) 2