LMV358AIDGKR

Texas Instruments LMV358AIDGKR

LM358DG4

Texas Instruments LM358DG4

LM358DE4

Texas Instruments LM358DE4

LM358BIDR

Texas Instruments LM358BIDR

LM350_XFCS

ON Semiconductor LM350_XFCS

onsemi LM358DG.

Texas Instruments LM218D

LM258P

National Semiconductor LM258P

ON Semiconductor LM358DMR2

Price
RoHS Compliant Compliant Compliant See ti.com Not Compliant Compliant
Lead Status No No No See ti.com No
GBW(Typ)(MHz) 1 1.2
Features Cost Optimized,EMI Hardened Cost Optimized,EMI Hardened
CMRR(Min)(dB) 63 75
Rating Catalog Catalog
Vos (Offset Voltage @ 25C)(Max)(mV) 4 3
Operating Temperature Range(C) -40 to 125 -40 to 85
Vn at 1kHz(Typ)(nV/rtHz) 33 40
Offset Drift(Typ)(uV/C) 1 4
Package Size mm2 mm2
Iq per channel(Max)(mA) 0.15 0.5
CMRR(Typ)(dB) 95 100
Architecture CMOS Bipolar
Total Supply Voltage(Min)(+5V=5, +/-5V=10) 1.8 3
Number of Channels(#) 2 2
Total Supply Voltage(Max)(+5V=5, +/-5V=10) 5.5 36
Package Group SOIC,VSSOP SOIC|8
Approx. Price (US$) 0.23 | 1ku
Iq per channel(Typ)(mA) 0.08 0.3
Slew Rate(Typ)(V/us) 1.7 0.5
Output Current(Typ)(mA) 40 30
Rail-to-Rail In to V-,Out In to V-
Input Bias Current(Max)(pA) 100000
Approx. price(US$) 0.07 | 1ku