Bidirectional, Zero Drift, Current Sense Amplifier Features: Typical 0.1 µV/°C offset drift Maximum ±400 µV voltage offset over full temperature range 2.7 V to 5.5 V power supply operating range Electromagnetic interference (EMI) filters included High common-mode input voltage range −2 V to +70 V continuous −3 V to +80 V survival Initial gain = 60 V/V Wide operating temperature range AD8417WB: −40°C to +125°C AD8417WH: −40°C to +150°C Bidirectional operation Available in 8-lead SOIC and 8-lead MSOP Common-mode rejection ratio (CMRR): 86 dB, dc to 10 kHz Qualified for automotive applications

Bidirectional, Zero Drift, Current Sense Amplifier Features: Typical 0.1 µV/°C offset drift Maximum ±400 µV voltage offset over full temperature range 2.7 V to 5.5 V power supply operating range Electromagnetic interference (EMI) filters included High common-mode input voltage range −2 V to +70 V continuous −3 V to +80 V survival Initial gain = 60 V/V Wide operating temperature range AD8417WB: −40°C to +125°C AD8417WH: −40°C to +150°C Bidirectional operation Available in 8-lead SOIC and 8-lead MSOP Common-mode rejection ratio (CMRR): 86 dB, dc to 10 kHz Qualified for automotive applications

Bidirectional, Zero Drift, Current Sense Amplifier Features: Typical 0.1 µV/°C offset drift Maximum ±400 µV voltage offset over full temperature range 2.7 V to 5.5 V power supply operating range Electromagnetic interference (EMI) filters included High common-mode input voltage range −2 V to +70 V continuous −3 V to +80 V survival Initial gain = 60 V/V Wide operating temperature range AD8417WB: −40°C to +125°C AD8417WH: −40°C to +150°C Bidirectional operation Available in 8-lead SOIC and 8-lead MSOP Common-mode rejection ratio (CMRR): 86 dB, dc to 10 kHz Qualified for automotive applications

3 nV /Hz, Low Power Instrumentation Amplifier Features: Low power 2.3 mA maximum supply current Low noise 3.2 nV/√Hz maximum input voltage noise at 1 kHz 200 fA/√Hz current noise at 1 kHz Excellent ac specifications  10 MHz bandwidth (G = 1) 2 MHz bandwidth (G = 100) 0.6 µs settling time to 0.001% (G = 10) 80 dB CMRR to 20 kHz (G = 1) 35 V/µs slew rate High precision dc performance (AD8421BRZ) 94 dB CMRR minimum (G = 1) 0.2 μV/C maximum input offset voltage drift 1 ppm/C maximum gain drift (G = 1)500 pA maximum input bias current Inputs protected to 40 V from opposite supply ±2.5 V to 18 V dual supply (5 V to 36 V single supply) Gain set with a single resistor (G = 1 to 10,000) Available in 8-lead LFCSP, 8-lead MSOP, and 8-lead SOIC Download AD8421-KGD Data Sheet Available As Known Good Die and fully guaranteed to data sheet specificationsAD8421-EP supports defense and aerospace applications (AQEC standard) Download AD8421-EP data sheet (pdf) Military temperature range (−55°C to +125°C) Controlled manufacturing baseline One assembly/test site One fabrication site Enhanced product change notification Qualification data available on request V62/13625 DSCC Drawing Number

High Performance, Low Power, Rail-to-Rail Precision Instrumentation Amplifier Features: Low power: 330 μA maximum quiescent current Rail-to-rail output Low noise and distortion 8 nV/√Hz maximum input voltage noise at 1 kHz 0.15 μV p-p RTI noise (G = 100) 0.5 ppm nonlinearity with 2 kΩ load (G = 1) Excellent ac specifications 80 dB minimum CMRR at 10 kHz (G = 1) 2.2 MHz bandwidth (G = 1) High precision dc performance (AD8422BRZ) 150 dB minimum CMRR (G = 1000) 0.04% maximum gain error (G = 1000) 0.3 μV/°C maximum input offset drift 0.5 nA maximum input bias current Wide supply range 4.6 V to 36 V single supply ±2.3 V to ±18 V dual supply Input overvoltage protection: 40 V from opposite supply Gain range: 1 to 1000 Available in 8-lead LFCSP, 8-lead MSOP, and 8-lead SOIC_N

60 MHz, 2000 V/s, Monolithic Op Amp with Quad Low Noise Features: Wide bandwidth 60 MHz at gain of −1  33 MHz at gain of −10  Slew rate: 2000 V/μs  20 MHz full power bandwidth, 20 V p-p, RL = 500 Ω  Fast settling: 100 ns to 0.1% (10 V step) Differential gain error: 0.03% at 4.4 MHz  Differential phase error: 0.16° at 4.4 MHz  Low offset voltage: 150 μV maximum (B Grade) Low quiescent current: 6.5 mA  Available in tape and reel in accordance with EIA-481-A standard

Digitally Programmable Sensor Signal Amplifier with EMI Filters Features: EMI filters at input pins Specified from −40°C to +140°C Low offset voltage: 10 μV maximum Low input offset voltage drift: 65 nV/°C maximum High CMRR: 94 dB minimum Digitally programmable gain and output offset voltage Programmable output clamp voltage Open and short wire fault detection Low-pass filtering Single-wire serial interface Stable with any capacitive load SOIC_N and LFCSP_VQ packages 4.5 V to 5.5 V operation

Ultrafast 7 ns Single Supply Comparator Features: 7 ns propagation delay at 5 V Single supply operation: 3 V to 10 V Low power Latch function TSSOP packages

Low Input Bias Current, Wide BW JFET Precision Dual Op Amp Features: Low Noise 6 nV/√Hz Low Offset Voltage: 100 µV Max Low Input Bias Current 10 pA Max Fast Settling: 600 ns to 0.01% Low Distortion Unity Gain Stable No Phase Reversal Dual-Supply Operation: ±5 V to ±13 V

3000 V/S, 35mW Current Feedback Quad Amplifier Features: High speed 250 MHz -3 dB bandwidth (G = +1) 3000 V/µs slew rate 21 ns settling time to 0.1% 1.8 ns rise time for 2 V step Low power 3.5 mA/amp power supply Current (35 mW/amp) Single supply operation Fully specified for +5 V supply High output current of 50 mA Good video specifications (RL = 150 Ω, G = +2) Gain flatness 0.1 dB to 30 MHz 0.04% differential gain error 0.10° differential phase error Low distortion –78 dBc THD at 5 MHz –61 dBc THD at 20 MHz Available in a 14-lead SOIC