Dual Channel asynchronous evaluation boa ;RoHS Compliant: Yes

EVALUATION BOARD VCO WITH DIVIDE-BY-4; Silicon Manufacturer:Analog Devices; Silicon Core Number:HMC735; Kit Application Type:RF / IF; Application Sub Type:Voltage Controlled Oscillator; Kit Contents:Eval Board HMC735 ;RoHS Compliant: Yes

EVALUATION BOARD VCO WITH DIVIDE-BY-16; Silicon Manufacturer:Analog Devices; Silicon Core Number:HMC739; Kit Application Type:RF / IF; Application Sub Type:Voltage Controlled Oscillator; Kit Contents:Eval Board HMC739 ;RoHS Compliant: Yes

EVALUATION BOARD VCO WITH BUFFER AMP; Silicon Manufacturer:Analog Devices; Silicon Core Number:HMC431; Kit Application Type:RF / IF; Application Sub Type:Voltage Controlled Oscillator; Kit Contents:Eval Board HMC431; Product Range:-;RoHS Compliant: Yes

6.2 GHz Fractional-N Frequency Synthesizer Features: RF bandwidth to 6.2 GHz 2.7 V to 3.3 V power supply Separate VP allows extended tuning voltage Programmable fractional modulus Programmable charge pump currents 3-wire serial interface Digital lock detect Power-down mode Pin compatible with the ADF4110, ADF4111, ADF4112, ADF4113, ADF4106, ADF4153, and ADF4154 frequency synthesizers Programmable RF output phase Loop filter design possible with ADIsimPLL Cycle slip reduction for faster lock times

Clock & Timer Development Tools LTC6994-2 Demo Board 100ms, Output Rising Edge Delayed from Trigger Rising Edge

The HMC384LP4(E) is a GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCO with integrated resonator, negative resistance device, varactor diode, and buffer amplifier. The VCO?s phase noise performance is excellent over temperature, shock, vibration and process due to the oscillator?s monolithic structure. Power output is 3.5 dBm typical from a 3V supply voltage. The voltage controlled oscillator is packaged in a low cost leadless QFN 4x4 mm surface mount package.APPLICATIONS Wireless Infrastructure Industrial Controls Test Equipment Military

The HMC390LP4(E) is a GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCO with integrated resonator, negative resistance device, varactor diode, and buffer amplifier. Covering 3.55 to 3.9 GHz, the VCO?s phase noise performance is excellent over temperature, shock, vibration and process due to the oscillator?s monolithic structure. Power output is 4.7 dBm typical from a single supply of 3V @ 42 mA. The voltage controlled oscillator is packaged in a low cost leadless QFN 4?4 mm surface mount package.APPLICATIONS Wireless Local Loop (WLL) VSAT & Microwave Radio Test Equipment & Industrial Controls Military

The HMC429LP4(E) is a GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCO with an integrated resonator, negative resistance device, varactor diode, and buffer amplifier. Covering 4.45 to 5.0 GHz, the VCO?s phase noise performance is excellent over temperature, shock, vibration and process due to the oscillator?s monolithic structure. Power output is 4 dBm typical from a single supply of 3V @ 30mA. The voltage controlled oscillator is packaged in a low cost leadless QFN 4x4 mm surface mount package.APPLICATIONS 802.11a, HiperLAN WLAN VSAT, UNII & Microwave Radio Test Equipment & Industrial Controls Military

The HMC505LP4(E) is a GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCO with an integrated resonator, negative resistance device, varactor diode, and buffer amplifier. Covering 6.8 to 7.4 GHz, the VCO?s phase noise performance is excellent over temperature, shock and vibration due to the oscillator?s monolithic structure. Power output is +11 dBm typical from a single supply of +3V @ 80 mA. The voltage controlled oscillator is packaged in a leadless QFN 4x4 mm surface mount package.APPLICATIONS VSAT & Microwave Radio Test Equipment & Industrial Controls Military