The MAT12 is a dual, NPN-matched transistor pair that is specifically designed to meet the requirements of ultralownoise audio systems.With its extremely low input base spreading resistance (rbb'is typically 28 Ω) and high current gain (hFE typically exceeds 600 at IC = 1 mA), the MAT12 can achieve outstanding signal-to-noise ratios. The high current gain results in superior performance compared to systems incorporating commercially available monolithic amplifiers.Excellent matching of the current gain (ΔhFE) to about 0.5% and low VOS of less than 10 µV typical make the MAT12 ideal for symmetrically balanced designs, which reduce high-order amplifier harmonic distortion.Stability of the matching parameters is guaranteed by protection diodes across the base emitter junction. These diodes prevent degradation of beta and matching characteristics due to reverse biasing of the base emitter junction.The MAT12 is also an ideal choice for accurate and reliable current biasing and mirroring circuits. Furthermore, because the accuracy of a current mirror degrades exponentially with mismatches of VBE between transistor pairs, the low VOS of the MAT12 does not need offset trimming in most circuit applications.The MAT12 is a good replacement for the MAT02, and its performance and characteristics are guaranteed over the extended temperature range of −40°C to +85°C

TRANSISTOR NPN QUAD 40V 30MA 14SOIC; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:40V; Power Dissipation Pd:-; DC Collector Current:30mA; DC Current Gain hFE:300hFE; Transistor Case Style:SOIC; No. of Pins:14Pins; Operating Temperature Max:85°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (20-Jun-2016); Module Configuration:Quad; Operating Temperature Min:-40°C; Operating Temperature Range:-40°C to +85°C; Transition Frequency ft:300MHz

The MAT01 is a monolithic dual NPN transistor. An exclusive Silicon Nitride 'Triple-Passivation' process provides excellent stability of critical parameters over both temperature and time. Matchingcharacteristics include offset voltage of 40µV, temperature drift of 0.15µV/°C, and hFE matching of 0.7%.Very high h is provided over a six decade range of collector current, including an exceptional hFE of 590 at a collector current of only 10nA. The high gain at lower collector current makes the MAT01 ideal for use in low-power, low-level input stages.APPLICATIONS Weigh scales Low noise, op amp, front end Current mirror and current sink/source Low noise instrumentation amplifiers Voltage controlled attenuators Log amplifiers

BRIDGE RECTIFIER, 1PH, 2A, 50V, THD; No. of Phases:Single Phase; Repetitive Reverse Voltage Vrrm Max:50V; Forward Current If(AV):2A; Bridge Rectifier Case Style:Through Hole; Forward Voltage VF Max:1.1V; No. of Pins:4Pins RoHS Compliant: Yes

PNP General Purpose Amplifier 100V 200mA TO-92

SCRs SCR

Discrete Semiconductor Modules 72 Amps 1800V

Discrete Semiconductor Modules 72 Amps 800V

Discrete Semiconductor Modules STANDARD SCR 1600V 19A

Discrete Semiconductor Modules STANDARD SCR 1400V, 162A