The HMC514LP5(E) is a GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCO. The HMC514LP5(E) integrates resonators, negative resistance devices, varactor diodes and feature half frequency and divide-by-4 outputs. The VCO’s phase noise performance is excellent over temperature, shock, and process due to the oscillator’s monolithic structure. Power output is +7 dBm typical from a +3V supply voltage. The prescaler function can be disabled to conserve current if not required. The voltage controlled oscillator is packaged in a leadless QFN 5x5 mm surface mount package, and requires no external matching components.APPLICATIONS VSAT Radio Point-to-Point/Multi-Point Radio Test Equipment & Industrial Controls Military End-Use

The HMC737 is a GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCO. The HMC737 integrate a resonator, negative resistance device, varactor diode and feature half frequency output. The VCO's phase noise performance is excellent over temperature, shock, and process due to the oscillator's monolithic structure. Power output is +9 dBm typical from a +4.2V supply voltage. The voltage controlled oscillator is packaged in a leadless QFN 4x4 mm surface mount package, and requires no external matching components.APPLICATIONS Point-to-Multi-Point Radios Test Equipment & Industrial Controls SATCOM Military End-Use

Signal Conditioning Passive Freq. Doubler, 1.25 - 3.0 GHz

VCO Oscillators VCO SMT w/Buffer amp, 5.0 - 5.5 GHz

VCO, W/BUFFER AMP, 6.1GHZ-6.72GHZ, QFN24;

VCO, W/HALF FREQ O/P, 6.65-7.65GHZ, QFN;

Signal Conditioning Passive Freq. Doubler, 1.25 - 3.0 GHz

VCO Oscillators 7.8 - 8.8 GHz VCO

VCO Oscillators VCO SMT w/Buffer amp 3.15 - 3.4 GHz

VCO Oscillators VCO with Divide-by-4, 10.5 - 12.2 GHz