The HMC481ST89 & HMC481ST89E are SiGe Heterojunction Bipolar Transistor (HBT) Gain Block MMIC SMT amplifiers covering DC to 5 GHz. Packaged in an industry standard SOT89, the amplifier can be used as a cascadable 50 Ohm RF/IF gain stage as well as a LO or PA driver with up to +21 dBm output power. The HMC481ST89(E) offer 20 dB of gain with a +33 dBm output IP3 at 1 GHz while requiring only 79 mA from a single positive supply. The Darlington feedback pair used results in reduced sensitivity to normal process variations and excellent gain stability over temperature while requiring a minimal number of external bias components.Applications Cellular/PCS/3G Fixed Wireless and WLAN CATV, Cable Modem, and Direct Broadcast Satellite (DBS) Microwave Radio & Test Equipment

The HMC482ST89(E) is a SiGe Heterojunction Bipolar Transistor (HBT) Gain Block MMIC SMT amplifier covering DC to 5 GHz. Packaged in an industry standard SOT89, the amplifier can be used as a cascadable 50 Ohm RF/IF gain stage as well as a LO or PA driver with up to +24 dBm output power. The Darlington feedback pair results in reduced sensitivity to normal process variations and excellent gain stability over temperature while requiring a minimal number of external bias components.Applications Cellular / PCS / 3G  Fixed Wireless, WLAN & WiMAX  CATV, Cable Modem & DBS  Microwave Radio & Test Equipment

The HMC590 is a high dynamic range GaAs PHEMT MMIC 1 Watt Power Amplifier which operates from 6 to 10 GHz. This amplifier die provides 24 dB of gain, +31.5 dBm of saturated power at 25% PAE from a +7.0V supply. The RF I/Os are DC blocked and matched to 50 Ohms for ease of integration into Multi-Chip-Modules (MCMs).All data is taken with the chip in a 50 ohm test fixture connected via 0.025mm (1 mil) diameter wire bonds of length 0.31mm (12 mils). For applications which require optimum OIP3, Idd should be set for 520 mA, to yield +41 dBm OIP3. For applications which require optimum output P1dB, Idd should be set for 820 mA, to yield up to +32 dBm Output P1dB.Applications Point-to-Point Radios  Point-to-Multi-Point Radios  Test Equipment & Sensors  Military End-Use  Space

The HMC591LP5(E) is a high dynamic range GaAs PHEMT MMIC 2 Watt Power Amplifier which operates from 6 to 9.5 GHz. The amplifier provides 18 dB of gain, +33 dBm of saturated power, and 19% PAE from a +7V supply. This 50 Ohm matched amplifier does not require any external components and the RF I/Os are DC blocked for robust operation. For applications which require optimum OIP3, Idd should be set for 940 mA, to yield +41 dBm OIP3. For applications which require optimum output P1dB, Idd should be set for 1340 mA, to yield +33 dBm Output P1dB.Applications Point-to-Point Radios  Point-to-Multi-Point Radios  Test Equipment & Sensors  Military End-Use  Space

The HMC659 is a GaAs MMIC PHEMT Distributed Power Amplifier die which operates between DC and 15 GHz. The amplifier provides 19.1 dB of gain, +35 dBm output IP3 and +26.5 dBm of output power at 1 dB gain compression while requiring 300 mA from a +8V supply. Gain flatness is excellent at ±0.4 dB from DC to 10 GHz making the HMC619 ideal for EW, ECM, Radar and test equipment applications. The HMC619 amplifier I/Os are internally matched to 50 ohms facilitating integration into Mutli-Chip-Modules (MCMs). All data is taken with the chip connected via two 0.025mm (1 mil) wire bonds of minimal length 0.31 mm (12 mils).Applications Telecom Infrastructure Microwave Radio & VSAT Military & Space Test Instrumentation Fiber Optics

The HMC767LP6CE is a fully functioned Fractional-N Phase-Locked-Loop (PLL) Frequency Synthesizer with an integrated Voltage Controlled Oscillator (VCO). The input reference frequency range is DC to 350 MHz while the advanced delta-sigma modulator design in the fractional synthesizer allows both ultra-fine step sizes and very low spurious products. The highly integrated structure provides excellent phase noise performance over temperature, shock and process. In addition, the HMC767LP6CE offers frequency sweep and modulation features, external triggering, double-buffering, exact frequency control, phase modulation and more. The HMC767LP6CE is packaged in a leadless QFN 6 x 6 mm surface mount package.For theory of operation and register map refer to the 'PLLs w/ Integrated VCO - Microwave VCOs' Operating Guide.Applications VSAT Radio Microwave Point-To-Point Radios Test Equipment & Industrial Control Military End-Use Phased Array Applications FMCW Radar Systems

The HMC935LP5E is an Analog Phase Shifter which is controlled via an analog control voltage from 0.5 to +11V. The HMC935LP5E provides a continuously variable phase shift of 0 to 180 degrees from 2 to 20 GHz, with extremely consistent low insertion loss versus phase shift and frequency. The high accuracy HMC935LP5E is monotonic with respect to control voltage and features a typical low phase error of +20/-8 degrees. The HMC935LP5E is housed in an RoHS compliant 5 x 5 mm QFN leadless package.Applications EW Receivers Military Radar Test Equipment Satellite Communications Beam Forming Modules

The HMC273AMS10G(E) is a general purposebroadband 5-Bit positive control GaAs IC digitalattenuator in a 10 lead MSOP plastic package.Covering 0.7 to 3.8 GHz, the insertion loss is typicallyless than 3 dB. The attenuator bit values are1 (LSB), 2, 4, 8, and 16 dB for a total attenuationof 31 dB. Accuracy is excellent at ±0.2 dB typicalwith an IIP3 of up to +46 dBm. Five bit control voltageinputs, toggled between 0 and +3 to +5 volts, areused to select each attenuation state. A single Vddbias of +3 to +5 volts applied through an external5K Ohm resistor is required.Applications Cellular; UMTS/3G infrastructure ISM, MMDS, WLAN, WiMAX Microwave radio & VSAT Test equipment and sensors

The HMC1049 is a GaAs MMIC low noise amplifier (LNA) that operates between 0.3 GHz and 20 GHz. This LNA provides 16 dB of small signal gain, a 1.7 dB noise figure, and an Output IP3 of 27 dBm, requiring only 70 mA from a 7 V supply. The P1dB output power of 16 dBm enables the LNA to function as a local oscillator (LO) driver for balanced, I/Q or image rejection mixers. VDD can be applied to Pad 2 with VDD = 7 V or to Pad 4 with VDD = 4 V. Pad 4 requires a bias tee. The HMC1049 is also internally matched to 50 Ω for ease of integration into multichip modules (MCMs). All data is taken with the chip in a 50 Ω test fixture connected via 0.025 mm (1 mil) diameter wire bonds of 0.31 mm (12 mil) length.Applications Point-to-point radios Point-to-multipoint radios Military and space Test instrumentation

The HMC1097LP4E is a low noise, high linearity Direct Quadrature Modulator RFIC which is ideal for digital modulation applications from 0.1 to 6.0 GHz including; Cellular/3G, WiMAX/4G, Broadband Wireless Access & ISM circuits. Housed in a compact 4x4 mm (LP4) SMT QFN package, the RFIC requires minimal external components & provides a low cost alternative to more complicated double upconversion architectures. The RF output port is single-ended and matched to 50 Ohms with no external components. The LO requires -6 to +6 dBm and can be driven in either differential or single-ended mode. This device is optimized for a +5V supply, and offers improved carrier feedthrough and sideband suppression characteristics.APPLICATIONS UMTS, GSM or CDMA Basestations Fixed Wireless or WLL ISM Transceivers, 900 & 2400 MHz GMSK, QPSK, QAM, SSB Modulators Cellular/3G and WiMAX/4G