RF Amplifier

RF Mixer Sub-Harmonic mix Chip 14 - 21 GHz

RF Mixer Mix w/ Int IF & LO amp 0.7 - 1.2 GHz

Attenuators 2 dB LSB 2-Bit dig atten 0.7 - 4.0 GHz

The ADF4350 allows implementation of fractional-N orinteger-N phase-locked loop (PLL) frequency synthesizersif used with an external loop filter and external referencefrequency.The ADF4350 has an integrated voltage controlled oscillator(VCO) with a fundamental output frequency ranging from2200 MHz to 4400 MHz. In addition, divide-by-1/2/4/8 or 16circuits allow the user to generate RF output frequencies as lowas 137.5 MHz. For applications that require isolation, the RFoutput stage can be muted. The mute function is both pin- andsoftware-controllable. An auxiliary RF output is also available,which can be powered down if not in use.Control of all the on-chip registers is through a simple 3-wireinterface. The device operates with a power supply rangingfrom 3.0 V to 3.6 V and can be powered down when not in use.Applications Wireless infrastructure (W-CDMA, TD-SCDMA, WiMAX, GSM, PCS, DCS, DECT) Test equipment Wireless LANs, CATV equipment Clock generation

The HMC481ST89 & HMC481ST89E are SiGe Heterojunction Bipolar Transistor (HBT) Gain Block MMIC SMT amplifiers covering DC to 5 GHz. Packaged in an industry standard SOT89, the amplifier can be used as a cascadable 50 Ohm RF/IF gain stage as well as a LO or PA driver with up to +21 dBm output power. The HMC481ST89(E) offer 20 dB of gain with a +33 dBm output IP3 at 1 GHz while requiring only 79 mA from a single positive supply. The Darlington feedback pair used results in reduced sensitivity to normal process variations and excellent gain stability over temperature while requiring a minimal number of external bias components.Applications Cellular/PCS/3G Fixed Wireless and WLAN CATV, Cable Modem, and Direct Broadcast Satellite (DBS) Microwave Radio & Test Equipment

The HMC482ST89(E) is a SiGe Heterojunction Bipolar Transistor (HBT) Gain Block MMIC SMT amplifier covering DC to 5 GHz. Packaged in an industry standard SOT89, the amplifier can be used as a cascadable 50 Ohm RF/IF gain stage as well as a LO or PA driver with up to +24 dBm output power. The Darlington feedback pair results in reduced sensitivity to normal process variations and excellent gain stability over temperature while requiring a minimal number of external bias components.Applications Cellular / PCS / 3G  Fixed Wireless, WLAN & WiMAX  CATV, Cable Modem & DBS  Microwave Radio & Test Equipment

The HMC590 is a high dynamic range GaAs PHEMT MMIC 1 Watt Power Amplifier which operates from 6 to 10 GHz. This amplifier die provides 24 dB of gain, +31.5 dBm of saturated power at 25% PAE from a +7.0V supply. The RF I/Os are DC blocked and matched to 50 Ohms for ease of integration into Multi-Chip-Modules (MCMs).All data is taken with the chip in a 50 ohm test fixture connected via 0.025mm (1 mil) diameter wire bonds of length 0.31mm (12 mils). For applications which require optimum OIP3, Idd should be set for 520 mA, to yield +41 dBm OIP3. For applications which require optimum output P1dB, Idd should be set for 820 mA, to yield up to +32 dBm Output P1dB.Applications Point-to-Point Radios  Point-to-Multi-Point Radios  Test Equipment & Sensors  Military End-Use  Space

The HMC591LP5(E) is a high dynamic range GaAs PHEMT MMIC 2 Watt Power Amplifier which operates from 6 to 9.5 GHz. The amplifier provides 18 dB of gain, +33 dBm of saturated power, and 19% PAE from a +7V supply. This 50 Ohm matched amplifier does not require any external components and the RF I/Os are DC blocked for robust operation. For applications which require optimum OIP3, Idd should be set for 940 mA, to yield +41 dBm OIP3. For applications which require optimum output P1dB, Idd should be set for 1340 mA, to yield +33 dBm Output P1dB.Applications Point-to-Point Radios  Point-to-Multi-Point Radios  Test Equipment & Sensors  Military End-Use  Space

The HMC659 is a GaAs MMIC PHEMT Distributed Power Amplifier die which operates between DC and 15 GHz. The amplifier provides 19.1 dB of gain, +35 dBm output IP3 and +26.5 dBm of output power at 1 dB gain compression while requiring 300 mA from a +8V supply. Gain flatness is excellent at ±0.4 dB from DC to 10 GHz making the HMC619 ideal for EW, ECM, Radar and test equipment applications. The HMC619 amplifier I/Os are internally matched to 50 ohms facilitating integration into Mutli-Chip-Modules (MCMs). All data is taken with the chip connected via two 0.025mm (1 mil) wire bonds of minimal length 0.31 mm (12 mils).Applications Telecom Infrastructure Microwave Radio & VSAT Military & Space Test Instrumentation Fiber Optics