The HMC374(E) is a general purpose broad band Low Noise Amplifier (LNA) for use in the 0.3 - 3.0 GHz frequency range. The LNA provides 15 dB of gain and a 1.5 dB noise figure from a single positive supply of +2.75 to +5.5V. The low noise figure coupled with a high P1dB (22 dBm) and high OIP3 (37 dBm) make this part ideal for cellular applications. The compact LNA design utilizes on-chip matching for repeatable gain and noise figure performance. To minimize board area the design is offered in a low cost SOT26 package that occupies only 0.118” x 0.118”.Applications Cellular/PCS/3G  WCS, MMDS & ISM  Fixed Wireless & WLAN  Private Land Mobile Radio

The HMC565 is a high dynamic range GaAs PHEMT MMIC Low Noise Amplifier (LNA) chip which operates from 6 to 20 GHz. The HMC565 features 22 dB of small signal gain, 2.3 dB of noise figure and has a consistent IP3 of 20 dBm across the operating band. This self-biased LNA is ideal for hybrid and MCM assemblies due to its compact size, wideband performance, single +3V supply operation, and DC blocked RF I/O’s. All data is measured with the chip in a 50 Ohm test fixture connected via two 0.025 mm (1 mil) diameter bondwires of minimal length 0.31 mm (12 mil).Applications Point-to-Point Radios  Point-to-Multi-Point Radios & VSAT  Test Equipment and Sensors  Military & Space

The HMC576LC3B is a x2 active broadband frequency multiplier utilizing GaAs PHEMT technology in a leadless RoHS compliant SMT package. When driven by a +3 dBm signal, the multiplier provides +15 dBm typical output power from 18 to 29 GHz. The Fo and 3Fo isolations are >20 dBc at 24 GHz.The HMC576LC3B is ideal for use in LO multiplier chains for Pt to Pt & VSAT Radios yielding reduced parts count vs. traditional approaches. The low additive SSB Phase Noise of -132 dBc/Hz at 100 kHz offset helps maintain good system noise performance. The RoHS packaged HMC576LC3B eliminates the need for wire bonding, and allows the use of surface mount manufacturing techniques.APPLICATIONS Clock Generation Applications: SONET OC-192 & SDH STM-64 Point-to-Point & VSAT Radios Test Instrumentation Military & Space

The HMC606 is a GaAs InGaP HBT MMIC Distributed Amplifier die which operates between 2 and 18 GHz. With an input signal of 12 GHz, the amplifier provides ultra low phase noise performance of -160 dBc/Hz at 10 kHz offset, representing a significant improvement over FET-based distributed amplifiers. The HMC606 provides 14 dB of small signal gain, +27 dBm output IP3 and +15 dBm of output power at 1 dB gain compression while requiring 64 mA from a +5V supply. The HMC606 amplifier I/Os are internally matched to 50 Ω facilitating easy integration into Multi-Chip-Modules (MCMs). All data is taken with the chip in a 50 Ω test fixture connected via 0.025 mm (1mil) diameter wire bonds of minimal length 0.31 mm (12 mils).Applications Radar, EW & ECM Microwave Radio Test Instrumentation Military & Space Fiber Optic Systems

The HMC611 SiGe BiCMOS Logarithmic Detector/Controller generates a voltage that is proportional to the log of the RF power envelop presented to its input. The HMC611 employs a successive compression topology which delivers extremely high dynamic range and conversion accuracy over a wide input frequency range. As the input power is increased, successive amplifiers move into saturation one by one creating an accurate approximation of the logarithm function. The output of a series of square law detectors is summed, converted into voltage domain and buffered to drive the LOGOUT output. For detection mode, the LOGOUT pin is shorted to the VSET input, and will provide a nominal logarithmic slope of -25 mV/dB and an intercept of 18 dBm (22 dBm for ƒ ≥ 5.8 GHz). The HMC611 can also be used in the controller mode where an external voltage is applied to the VSET pin, to create an AGC or APC feedback loop.Applications Cellular/PCS/3G WiMAX, WiBro, WLAN, Fixed Wireless & Radar Power Monitoring & Control Circuitry Receiver Signal Strength Indication (RSSI) Automatic Gain & Power Control

The HMC650/HMC651/HMC652/HMC653/HMC654/HMC655/HMC656/HMC657/HMC658 are a line of wideband fixed value 50 Ohm matched attenuator chips which offer relative attenuation levels of 0, 2, 3, 4, 6, 10, 15 and 20 dB. These passive thoughlines and attenuators are ideal for microstrip, hybrid, and multi-chip module applications where extremely flat attenuation, and excellent VSWR vs. frequency are required.These wideband attenuators feature low inductance on-chip vias, and require no additional ground connections. The HMC650 through HMC658 are backside metallized with gold, and are suitable for eutectic or epoxy die attach. Each of the 9 products can be purchased individually by their respective part number or in a set of 10 each in the HMC-DK006 Fixed Attenuator Chip Designer’s Kit.Applications Fiber Optics Microwave Radio Military & Space Hybrids Test & Measurement Scientific Instruments RF/Microwave Circuit Prototyping

The HMC719 is a GaAs PHEMT MMIC Low Noise Amplifier that is ideal for Cellular/3G and LTE/WiMAX/4G basestation front-end receivers operating between 1.3 and 2.9 GHz. The amplifier has been optimized to provide 1 dB noise figure, 34 dB gain and +39 dBm output IP3 from a single supply of +5V. Input and output return losses are excellent and the LNA requires minimal external matching and bias decoupling components. The HMC719 shares the same package and pinout with the HMC718 600 - 1400 MHz LNA. The HMC719 can be biased with +3V to +5V and features an externally adjustable supply current which allows the designer to tailor the linearity performance of the LNA for each application.APPLICATIONS Cellular/3G & LTE/WiMAX/4G BTS & Infrastructure Repeaters & Femtocells Access Points Test Equipment & Military

TThe HMC797A is a GaAs MMIC pHEMT Distributed Power Amplifier which operates between DC and 22 GHz. The amplifier provides 15 dB of gain, +29 dBm of output power at 1 dB gain compression, +31 dBm of saturated output power, and 23% PAE while requiring400 mA from a +10 V supply. With up to +41 dBm of output IP3, the HMC797A is ideal for high linearityapplications in military and space as well as test equipment where high order modulations are used.This versatile PA exhibits a positive gain slope from 2to 20 GHz making it ideal for EW, ECM, Radar and testequipment applications. The HMC797A amplifier I/Osare internally matched to 50 Ohms facilitating integrationinto Multi-Chip-Modules (MCMs). All data is takenwith the chip connected via two 0.025 mm (1 mil) wirebonds of minimal length 0.31 mm (12 mils).Applications Test Instrumentation Military & Space Fiber Optics

The HMC814 is a x2 active broadband frequency multiplier chip utilizing GaAs PHEMT technology. When driven by a +4 dBm signal, the multiplier provides +17 dBm typical output power from 13 to 24.6 GHz. The Fo, 3Fo and 4Fo isolations are >20 dBc at 19 GHz. The HMC814 is ideal for use in LO multiplier chains for Pt-to-Pt & VSAT Radios yielding reduced parts count vs. traditional approaches. The low additive SSB Phase Noise of -136 dBc/Hz at 100 kHz offset helps maintain good system noise performance. All data is taken with the chip connected via two 0.025mm (1 mil) wire bonds of minimal length 0.31 mm (12 mils).APPLICATIONS Clock Generation Applications: SONET OC-192 & SDH STM-64 Point-to-Point & VSAT Radios Test Instrumentation Military End-Use Sensors

The HMC934LP5E is an Analog Phase Shifter which is controlled via an analog control voltage from 0 to +13V. The HMC934LP5E provides a continuously variable phase shift of 0 to 400 degrees from 1 to 2 GHz, with extremely consistent low insertion loss versus phase shift and frequency. The high accuracy HMC934LP5E is monotonic with respect to control voltage and features a typical low phase error of +3.5 / -2 degrees. The HMC934LP5E is housed in an RoHS compliant 5 x 5 mm QFN leadless package.Applications EW Receivers Military Radar Test Equipment Satellite Communications Beam Forming Modules