The ADRF5130 is a high power, reflective, 0.7 GHz to 3.8 GHz, silicon, single-pole, double-throw (SPDT) switch in a leadless, surface-mount package. The switch is ideal for high power and cellular infrastructure applications, like long-term evolution (LTE) base stations.The ADRF5130 has high power handling of 43 dBm (maximum) and 0.1 dB compression (P0.1dB) of 46 dBm, with a low insertion loss of 0.6 dB at 2 GHz and 0.7 dB at 3.5 GHz. On-chip circuitry operates at a single, positive supply voltage of 5 V and typical supply current of 1.06 mA, making the ADRF5130 an ideal alternative to pin diode-based switches.The device comes in a RoHS compliant, compact, 24-lead, 4 mm ? 4 mm LFCSP package.Applications Cellular/4G infrastructure Wireless infrastructure Military and high reliability applications Test equipment Pin diode replacement

The ADRF5144 is a reflective, single pole double-throw (SPDT) switch manufactured in the silicon process.The ADRF5144 operates from 1 GHz to 20 GHz with typical insertion loss of 0.85 dB and typical isolation of 48 dB. The device has a radio frequency (RF) input power handling capability of 40 dBm average power and TBD dBm peak power for the insertion loss path. The ADRF5144 also supports extended frequency range of 9 kHz to 26.5 GHz with derated power handling capability below 1 GHz and above 20 GHz.The ADRF5144 draws a low current of 130 ?A on the positive supply of +3.3 V and 510 ?A on negative supply of ?3.3 V. The device employs complementary metal-oxide semiconductor (CMOS)-/low voltage transistor to transistor logic (LVTTL)-compatible controls. The ADRF5144 requires no additional driver circuitry, making it an ideal alternative to GaN and PIN diode-based switches.The ADRF5144 can also operate with a single positive supply voltage (VDD) applied while the negative supply voltage (VSS) is tied to ground. In this operating condition, the small signal performance will be maintained while the switching characteristics, linearity and power handling performance will be derated, see Table 2 in the data sheet.The ADRF5144 comes in a 20-lead, 3.0 mm ? 3.0 mm, RoHS-compliant, land grid array (LGA) package and can operate from ?40?C to +85?C.APPLICATIONSTest instrumentationMilitary radios, radars, and electronic counter measuresSATCOMGaN and PIN diode replacement

The HMC6981 is a four-stage GaAs pHEMT MMIC Power Amplifier with an integrated temperature compensated on-chip Power Detector, which operates between 15 and 20 GHz. The amplifier provides 26 dB of gain, +34.5 dBm of saturated output power, and 25% PAE from a +6V supply. With an excellent output IP3 of +43.5 dBm, the HMC6981 is ideal for linear applications such as high capacity point-to-point or point-to-multi-point radios or SATCOM applications demanding +34.5 dBm of efficient saturated output power. The HMC6981 is housed in a ceramic 6 x 6 mm high frequency air cavity package which exhibits low thermal resistance and is compatible with high volume surface mount manufacturing techniques. The RF I/Os are internally matched to 50 Ohms.Applications Point-to-Point Radios Point-to-Multi-Point Radios SATCOM

The HMC394LP4(E) is a low noise GaAs HBT programmable 5-bit counter in 4x4 mm leadless surface mount package. This device allows continuous division from N= 2 to 32 at input frequencies up to 2.2 GHz. The output voltage swing is 800 mV with a duty cycle inversely proportional to N. The low additive SSB phase noise of -153 dBc/Hz at 100 KHz offset makes this counter an excellent choice for low noise synthesizer applications.APPLICATIONSProgrammable divider for offset synthesizer and variable divide by N applications: Satellite Communication Systems Point-to-Point and Point-to-Multi-Point Radios LMDS SONET

The HMC327MS8G(E) is a high efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC Power amplifier which operates between 3 and 4 GHz. The amplifier is packaged in a low cost, surface mount 8 leaded package with an exposed base for improved RF and thermal performance. With a minimum of external components, the amplifier provides 21 dB of gain, +30 dBm of saturated power at 45% PAE from a +5V supply voltage. Power down capability is available to conserve current consumption when the amplifier is not in use.Applications Wireless Local Loop

The HMC413QS16G(E) is a high efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC Power amplifier which operates between 1.6 and 2.2 GHz. The amplifier is packaged in a low cost, surface mount 16 leaded package with an exposed base for improved RF and thermal performance. With a minimum of external components, the amplifier provides 23 dB of gain, +29.5 dBm of saturated power at 42% PAE from a +5V supply voltage. The amplifi er can also operate with a 3.6V supply. Vpd can be used for full power down or RF output power/current control.Applications Cellular / PCS / 3G Portable & Infrastructure Wireless Local Loop

The HMC194AMS8E is a low-cost SPDT switch in an 8-lead MSOP packages for use in applications which require high isolation between two RF paths. The devices can control signals from DC to 3 GHz and have been optimized to provide extremely high isolation with minimal insertion loss in medium and low power applications. On chip circuitry allows positive voltage control operation at very low DC cur- rents with control inputs compatible with CMOS and most TTL logic families. RF1 and RF2 are reflective opens when ?OFF?.APPLICATIONS Cellular/PCS Base Stations Portable Wireless MMDS & WirelessLAN

The HMC500LP3(E) is a high dynamic range Vector Modulator RFIC which is targeted for RF predistortion and feed-forward cancellation circuits, as well as RF cancellation and beam forming amplitude/phase correction circuits. The I & Q ports of the HMC500LP3(E) can be used to continuously vary the phase and amplitude of RF signals by up to 360 degrees and 40 dB respectively, while supporting a 3 dB modulation bandwidth of 150 MHz. With an input IP3 of +33 dBm and input noise floor of -152 dBm/Hz (at -10 dB maximum gain setting), the input IP3/noise floor ratio is 185 dB.APPLICATIONS Wireless Infrastructure HPA & MCPA Error Correction Pre-Distortion or Feed-Forward Linearization PCS, GSM and W-CDMA Systems Beam Forming or RF Cancellation Circuits

The HMC372LP3 & HMC372LP3E are GaAs pHEMT MMIC Low Noise Amplifiers that are ideal for GSM & CDMA cellular basestation front-end receivers operating between 700 and 1000 MHz. The amplifier has been optimized to provide 1 dB noise figure, 15 dB gain and +34 dBm output IP3 from a single supply of +5V @ 100 mA. Input and output return losses are 25 and 14 dB respectively with the LNA requiring only four external components to optimize the RF Input match, RF ground and DC bias. For applications which require improved noise figure, please see the HMC617LP3(E).Applications GSM, GPRS & EDGE CDMA & W-CDMA Private Land Mobile Radio

The HMC487LP5E is a high dynamic range GaAsPHEMT MMIC 2 Watt Power Amplifiers housedin leadless 5 x 5 mm surface mount packages.Operating from 9 to 12 GHz, the amplifier provides20 dB of gain, +33 dBm of saturated power and 20%PAE from a +7V supply voltage. Output IP3 is +36 dBmtypical. The RF I/Os are DC blocked and matched to 50Ohms for ease of use. The HMC487LP5E eliminatesthe need for wire bonding, allowing use of surfacemount manufacturing techniques.Applications Point-to-Point Radios Point-to-Multi-Point Radios Test Equipment and Sensors Military End-Use