Single-Supply, Low Cost Instrumentation Amplifier Features:Gain set with 1 resistor per amplifierGain = 5 to 1000InputsVoltage range to 150 mV below negative rail25 nA maximum input bias current30 nV/Hz, RTI noise @ 1 kHzPower suppliesDual supply: 2V to 12Single supply: 3V to 24V500 A maximum supply current

Single-Lead, Heart Rate Monitor Front End Features: Fully integrated single-lead ECG front end Low supply current: 170 μA (typical) Common-mode rejection ratio: 80 dB (dc to 60 Hz) Two or three electrode configurations High signal gain (G = 100) with dc blocking capabilities 2-pole adjustable high-pass filter Accepts up to ±300 mV of half cell potential Fast restore feature improves filter settling Uncommitted op amp 3-pole adjustable low-pass filter with adjustable gain Leads off detection: ac or dc options Integrated right leg drive (RLD) amplifier Single-supply operation: 2.0 V to 3.5 V Integrated reference buffer generates virtual ground Rail-to-rail output Internal RFI filter 8 kV HBM ESD rating Shutdown pin 20-lead 4 mm × 4 mm LFCSP package Qualified for automotive applications

Single-Supply, Low Power, Precision FET Input Quad Buffer Features: Low power 250 μA maximum supply current per amplifier FET input 2 pA maximum input bias current at 25°C Extremely high input impedance Low noise 13 nV/√Hz voltage noise at 1 kHz 0.4 μV p-p voltage noise (0.1 Hz to 10 Hz) 0.8 fA/√Hz current noise at 1 kHz High dc precision 3 μV/°C maximum offset drift (B grade) 3 MHz bandwidth Unique pinout No leakage from inputs to supply pins Provides guarding capability Rail-to-rail output Single-supply operation Input range extends to ground Wide supply range Single-supply: 3 V to 36 V Dual-supply: ±1.5 V to ±18 V  Available in a compact 10-lead MSOP

10 MHz, G = 1, 10, 100, 1000 iCMOS Programmable Gain Instrumentation Amplifier Features: Small package: 10-lead MSOP Programmable gains: 1, 10, 100, 1000 Digital or pin-programmable gain setting Wide supply: ±5 V to ±15 V Excellent dc performance High CMRR: 100 dB (minimum), G = 100 Low gain drift: 10 ppm/°C (maximum) Low offset drift: 1.2 µV/°C (maximum), G = 1000 See data sheet for additional features

Very Low Distortion, Dual-Channel, Audio Difference Amplifier Features: ±4000 V HBM ESD Very low distortion 0.00025% THD + N (20 kHz) 0.0015% THD + N (100 kHz) Drives 600 Ω loads Two gain settings Gain of ½ (−6 dB) Gain of 2 (+6 dB) 0.05% maximum gain error 10 ppm/°C maximum gain drift Excellent ac specifications 20 V/μs minimum slew rate 800 ns to 0.01% settling time High accuracy dc performance 77 dB minimum CMRR 700 μV maximum offset voltage 14-lead SOIC package Supply current: 2.5 mA maximum per channel Supply range: ±2.5 V to ±18 V

Low Power, Wide Supply Range, Low Cost Unity-Gain Difference Amplifiers Features: Wide input range beyond supplies Rugged input overvoltage protection Low supply current: 200 μA maximum per channel Low power dissipation: 0.54 mW at VS = 2.7 V Bandwidth: 550 kHz CMRR: 86 dB minimum, dc to 10 kHz System offset voltage: ±2 μV/°C maximum (B Grade) Low gain drift: 1 ppm/°C maximum (B Grade) Enhanced slew rate: 1.1 V/μs Wide power supply range Single supply: 2.0 V to 36 V Dual supplies: ±2 V to ±18 V

2 GHz Ultralow Distortion Differential RF/IF Amplifier Features: −3 dB bandwidth of 2.2 GHz (AV = +10 dB) Single resistor gain adjust: 3 dB ≤ AV ≤ 25 dB Single resistor and capacitor distortion adjust Input resistance: 3 kΩ, independent of gain (AV) Differential or single-ended input to differential output Low noise input stage: 2.7 nV/√Hz RTI at AV = 10 dB Low broadband distortion 10 MHz: −86 dBc HD2, −82 dBc HD3 70 MHz: −84 dBc HD2, −82 dBc HD3 190 MHz: −81 dBc HD2, −87 dBc HD3 OIP3 of 41 dBm at 150 MHz Slew rate: 8 V/ns Fast settling and overdrive recovery of <2 ns Single-supply operation: 3 V to 5.5 V Low power dissipation: 37 mA typical at 5 V Power-down capability: 5 mA at 5 V Fabricated using the high speed XFCB3 SiGe process

Bidirectional, Zero Drift, Current Sense Amplifier Features: Typical 0.1 µV/°C offset drift Maximum ±400 µV voltage offset over full temperature range 2.7 V to 5.5 V power supply operating range Electromagnetic interference (EMI) filters included High common-mode input voltage range −2 V to +70 V continuous −3 V to +80 V survival Initial gain = 60 V/V Wide operating temperature range AD8417WB: −40°C to +125°C AD8417WH: −40°C to +150°C Bidirectional operation Available in 8-lead SOIC and 8-lead MSOP Common-mode rejection ratio (CMRR): 86 dB, dc to 10 kHz Qualified for automotive applications

Bidirectional, Zero Drift, Current Sense Amplifier Features: Typical 0.1 µV/°C offset drift Maximum ±400 µV voltage offset over full temperature range 2.7 V to 5.5 V power supply operating range Electromagnetic interference (EMI) filters included High common-mode input voltage range −2 V to +70 V continuous −3 V to +80 V survival Initial gain = 60 V/V Wide operating temperature range AD8417WB: −40°C to +125°C AD8417WH: −40°C to +150°C Bidirectional operation Available in 8-lead SOIC and 8-lead MSOP Common-mode rejection ratio (CMRR): 86 dB, dc to 10 kHz Qualified for automotive applications

Bidirectional, Zero Drift, Current Sense Amplifier Features: Typical 0.1 µV/°C offset drift Maximum ±400 µV voltage offset over full temperature range 2.7 V to 5.5 V power supply operating range Electromagnetic interference (EMI) filters included High common-mode input voltage range −2 V to +70 V continuous −3 V to +80 V survival Initial gain = 60 V/V Wide operating temperature range AD8417WB: −40°C to +125°C AD8417WH: −40°C to +150°C Bidirectional operation Available in 8-lead SOIC and 8-lead MSOP Common-mode rejection ratio (CMRR): 86 dB, dc to 10 kHz Qualified for automotive applications