|
|
Toshiba Electronics Europe
TK100E10N1
|
Toshiba Electronics Europe
RN2103MFV
|
GeneSiC
GA03JT12-247
|
GeneSiC
GA10JT12-247
|
GeneSiC
GA08JT17-247
|
Bourns, Inc.
TIP126
|
Bourns, Inc.
BDX54
|
Bourns, Inc.
BDX54A
|
Texas Instruments
CSD88539NDT
|
Vishay
2N6661JTXL02
|
| Price |
|
|
|
|
|
$48.19 |
|
|
|
$0.54 |
|
| RoHS |
|
Compliant |
Compliant |
Compliant |
Compliant |
Compliant |
Compliant |
Compliant |
Compliant |
Compliant |
Not Compliant |
| Lead Status |
|
Yes |
No |
Yes |
Yes |
No |
|
|
Yes |
No |
No |
| QG Typ(nC) |
|
|
|
|
|
|
|
|
|
14 |
|
| ID, Continuous Drain Current at Ta=25degC(A) |
|
|
|
|
|
|
|
|
|
6.3 |
|
| Rating |
|
|
|
|
|
|
|
|
|
Catalog |
|
| Approx. Price (US$) |
|
|
|
|
|
|
|
|
|
0.20 | 1ku |
|
| IDM, Max Pulsed Drain Current(Max)(A) |
|
|
|
|
|
|
|
|
|
46 |
|
| QGD Typ(nC) |
|
|
|
|
|
|
|
|
|
2.3 |
|
| Configuration |
|
|
|
|
|
|
|
|
|
Dual |
|
| VDS(V) |
|
|
|
|
|
|
|
|
|
60 |
|
| VGS(V) |
|
|
|
|
|
|
|
|
|
20 |
|
| Package (mm) |
|
|
|
|
|
|
|
|
|
SO-8 |
|
| ID, Package limited(A) |
|
|
|
|
|
|
|
|
|
15 |
|
| Rds(on) Max at VGS=10V(mOhms) |
|
|
|
|
|
|
|
|
|
28 |
|
| VGSTH Typ(V) |
|
|
|
|
|
|
|
|
|
3 |
|
| ID, Silicon limited at Tc=25degC(A) |
|
|
|
|
|
|
|
|
|
11.7 |
|
| Logic Level |
|
|
|
|
|
|
|
|
|
No |
|
