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Texas Instruments MSP-TS430L092

Price $2.40 $1.98 $0.10
RoHS Y Not Compliant Compliant Compliant Compliant Compliant Yes Compliant Compliant Not Compliant
Lead Status Y Y No No No No Yes No No No
Package Group VQFN|72 TSSOP SOIC SOIC VSSOP PDIP,SOIC
Package size mm2
Resolution(Bits) 14
Sample rate(Max)(MSPS) 1000
Approx. price(US$) 490.00 | 1ku 17 | 1ku
Analog voltage AVDD(Max)(V) 2
SNR(dB) 69.6
Analog input BW(MHz) 1000
Logic voltage DV/DD(Min)(V) 1.1
SFDR(dB) 88
Number of input channels 4
Operating temperature range(C) -40 to 85
Logic voltage DV/DD(Max)(V) 1.2
Interface JESD204B
SNR(Typ)(dB) 69.6
Analog voltage AVDD(Min)(V) 1.8
Features Decimating Filter,Differential Inputs,High Dynamic Range,Nap Mode,Out of Range Indicator,Power Down
SFDR(Typ)(dB) 88
Power consumption(Typ)(mW) 2500
Input frame rate(Max)(Hz) 60
Component type Display Controller
Rating Catalog Catalog Automotive Automotive Automotive Catalog
Video ports 24-bit RGB, Parallel
Chipset family DLP230NP,DLPC3436,DLPA2000,DLPA2005,DLPA3000
Display resolution(Max) 1080p (1920x1080)
Typical Operating Current(Typ)(uA) 6
Number of Series Cells(Min) 3
Function Protection
Communication Interface No Communication
Approx. Price (US$) 0.90 | 1ku 1.42 | 1ku 1.71 | 1ku 1.65 | 1ku 3.90 | 100u
Special Features Analog current sense,Low-Side NCH CHG/DSG FET Drive,Programmable EEPROM or EPROM,Stackable (built-in interface),Temperature sense
Number of Series Cells(Max) 5
Protection Feature(s) Open wire detection,Over-current in Discharge (OCD),Over-temperature (OT),Over-voltage (OV),Short-circuit Discharge (SCD),Under-temperature (UT),Under-voltage (UV)
Vin(Max)(V) 25
Surge Voltage Rating(Vpk) 8000 8000
Package Size mm2 mm2 mm2 mm2
Operating Temperature Range(C) -40 to 125 -40 to 125 -40 to 125 -40 to 105,-55 to 125,0 to 70
Integrated Isolated Power No No
Propagation Delay(ns) 10.7 10.7
Data Rate(Max)(Mbps) 100 100
VCC(Max)(V) 5 5.5
Default Output Low High
Propagation Delay(Typ)(ns) 10.7 10.7
Forward/Reverse Channels 1/0 1/1
Number of Channels(#) 1 2 2 4
Isolation Rating(Vrms) 5000 5000
VCC(Min)(V) 2.25 2.25
Offset Drift(Typ)(uV/C) 0.03 0.5
Iq per channel(Typ)(mA) 0.385 0.35
Vos (Offset Voltage @ 25C)(Max)(mV) 0.025 0.8
Input Bias Current(Max)(pA) 850 30000
Output Current(Typ)(mA) 18 25
GBW(Typ)(MHz) 2 0.7
Architecture CMOS Bipolar
Slew Rate(Typ)(V/us) 0.8 0.4
Additional Features EMI Hardened,Zero Drift N/A
CMRR(Typ)(dB) 114 117
CMRR(Min)(dB) 106 97
Vn at 1kHz(Typ)(nV/rtHz) 8.8 22
Total Supply Voltage(Max)(+5V=5, +/-5V=10) 36 44
Total Supply Voltage(Min)(+5V=5, +/-5V=10) 4 5
Iq per channel(Max)(mA) 0.44 0.55
Rail-to-Rail In to V-,Out In to V-