The HMC606 is a GaAs InGaP HBT MMIC Distributed Amplifier die which operates between 2 and 18 GHz. With an input signal of 12 GHz, the amplifier provides ultra low phase noise performance of -160 dBc/Hz at 10 kHz offset, representing a significant improvement over FET-based distributed amplifiers. The HMC606 provides 14 dB of small signal gain, +27 dBm output IP3 and +15 dBm of output power at 1 dB gain compression while requiring 64 mA from a +5V supply. The HMC606 amplifier I/Os are internally matched to 50 Ω facilitating easy integration into Multi-Chip-Modules (MCMs). All data is taken with the chip in a 50 Ω test fixture connected via 0.025 mm (1mil) diameter wire bonds of minimal length 0.31 mm (12 mils).Applications Radar, EW & ECM Microwave Radio Test Instrumentation Military & Space Fiber Optic Systems

The HMC650/HMC651/HMC652/HMC653/HMC654/HMC655/HMC656/HMC657/HMC658 are a line of wideband fixed value 50 Ohm matched attenuator chips which offer relative attenuation levels of 0, 2, 3, 4, 6, 10, 15 and 20 dB. These passive thoughlines and attenuators are ideal for microstrip, hybrid, and multi-chip module applications where extremely flat attenuation, and excellent VSWR vs. frequency are required.These wideband attenuators feature low inductance on-chip vias, and require no additional ground connections. The HMC650 through HMC658 are backside metallized with gold, and are suitable for eutectic or epoxy die attach. Each of the 9 products can be purchased individually by their respective part number or in a set of 10 each in the HMC-DK006 Fixed Attenuator Chip Designer’s Kit.Applications Fiber Optics Microwave Radio Military & Space Hybrids Test & Measurement Scientific Instruments RF/Microwave Circuit Prototyping

The HMC722LP3E is an AND/NAND/OR/NOR function designed to support data transmission rates of up to 13 Gbps, and clock frequencies as high as 13 GHz. The HMC772LP3E may be easily configured to provide any of the following logic functions: AND, NAND, OR and NOR. The HMC722LP3E also features an output level control pin, VR, which allows for loss compensation or for signal level optimization.All input signals to the HMC722LP3E are terminated with 50ω to ground on-chip, and may be either AC or DC coupled. The differential outputs of the HMC722LP3E may be either AC or DC coupled. Outputs can be connected directly to a 50ω to ground terminated system, while DC blocking capacitors may be used if the terminating system is 50ω to a non-ground DC voltage. The HMC722LP3E operates from a single -3.3V DC supply, and is available in a RoHS compliant 3 × 3 mm SMT package.APPLICATIONS RF ATE Applications Broadband Test & Measurement Serial Data Transmission up to 13 Gbps Digital Logic Systems up to 13 GHz NRZ-to-RZ Conversion

The HMC822LP6CE is a fully functioned Fractional-N Phase-Locked-Loop (PLL) Frequency Synthesizer with an Integrated Voltage Controlled Oscillator (VCO). The synthesizer consists of an integrated low noise VCO with a triband output, an autocalibration subsystem for low voltage VCO tuning, a very low noise digital Phase Detector (PD), a precision controlled charge pump, a low noise reference path divider and a fractional divider.The fractional synthesizer features an advanced delta-sigma modulator design that allows both ultra-fine step sizes and low spurious products. The phase detector (PD) features cycle slip prevention (CSP) technology to allow faster frequency hopping times. Ultra low in-close phase noise and low spurious also allows wider loop bandwidths for faster frequency hopping and low micro-phonics.For theory of operation and register map refer to the 'PLLs with Integrated VCO - RF VCOs' Operating Guide.Applications Cellular/4G Infrastructure Repeaters and Femtocells Communications Test Equipment CATV Equipment Phased Array Applications DDS Replacement  Very High Data Rate Radios

Single Channel, 1024-Position, 1% R-Tolerance Digital Potentiometer Features: Single-channel, 1024-position resolution 20 kΩ, 50 kΩ, and 100 kΩ nominal resistance Calibrated 1% nominal resistor tolerance (resistor performance mode) Rheostat mode temperature coefficient: 35 ppm/°C Voltage divider temperature coefficient: 5 ppm/°C Single-supply operation: 9 V to 33 V Dual-supply operation: ±9 V to ±16.5 V SPI-compatible serial interface Wiper setting readback

IC AMP SENSOR SIGNAL SMD SOIC8; No. of Amplifiers:1 Amplifier; Input Offset Voltage:12µV; Slew Rate:-; Bandwidth:2MHz; Supply Voltage Range:2.7V to 5.5V; Amplifier Case Style:SOIC; No. of Pins:8Pins; Amplifier Output:Single Ended / Differential; CMRR:112dB; Operating Temperature Min:-40°C; Operating Temperature Max:125°C; Packaging:Each; Product Range:AD8557 Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (20-Jun-2016); Amplifer Supply Voltage:2.7V to 5.5V; Base Number:8557; No. of Amplifiers:1Amplifiers; Operating Temperature Range:-40°C to +125°C; Programmable Gain Max:1300; Programmable Gain Min:28; Supply Current:1.8mA; Termination Type:Surface Mount Device

Hot Swap Controller and I2C Power Monitor Features: Allows safe board insertion and removal from a live backplane  Controls supply voltages from 3.15 V to 16.5 V  Precision current sense amplifier  Precision voltage input  12-bit ADC for current and voltage readback  Charge pumped gate drive for external N-channel FET  I2C fast mode-compliant interface (400 kHz maximum) Adjustable analog current limit with circuit breaker  ±3% accurate hot swap current limit level  Fast response limits peak fault current  Automatic retry or latch-off on current fault  Programmable hot swap timing via TIMER pin  Active-high ON pin  2 address pins allow 16 devices on the same bus 10-lead MSOP

Dual 12-Bit, LVDS Interface 500 MSPS DAC Features: High dynamic range, dual DAC parts LVDS inputs with dual-port or optional interleaved single-port operation Single carrier W-CDMA ACLR = 80 dBc @ 61.44 MHz IF Innovative switching output stage permits usable outputs beyond Nyquist frequency LVDS inputs with dual-port or optional interleaved singleport operation See datasheet for additional features

High Bandwidth, Bidirectional 65 V Difference Amplifier Features: ±4000 V HBM ESD Ideal for current shunt applications High common-mode voltage range −4 V to +65 V operating −40 V to +80 V survival 3 MHz bandwidth <100 ns output propagation delay Gain: 3 V/V Wide operating temperature range Die: −40°C to +125°C 8-lead SOIC: 40C to +125C Adjustable output offset Available in 8-lead SOIC Excellent ac and dc performance 10 μV/°C offset drift 10 ppm/°C gain drift Qualified for automotive applications

Single-Supply 42 V System Difference Amplifier