Low Noise, Low Distortion Fully Differential Input/Output Amplifier/Driver Features: Fully Differential Input and Output Wide Supply Range: 2.375V to 12.6V Rail-to-Rail Output Swing Low Noise: 3nV/√Hz Low Distortion, 2VP-P, 1MHz: –94dBc Adjustable Output Common Mode Voltage Unity Gain Stable Gain-Bandwidth: 70MHz Slew Rate: 65V/μs Large Output Current: 85mA DC Voltage Offset <2mV MAX Open-Loop Gain: 100V/mV Low Power Shutdown 8-Pin MSOP or 3mm × 3mm DFN Package

No RSENSE Current Mode Boost DC/DC Controller Features: No Current Sense Resistor Required VOUT up to 60V Constant Frequency 550kHz Operation Internal Soft-Start and Optional External Soft-Start Adjustable Current Limit Pulse Skipping at Light Load VIN Range: 2.75V to 9.8V ±1.5% Voltage Reference Accuracy Current Mode Operation for Excellent Line and Load Transient Response Low Profile (1mm) SOT-23 and 2mm × 3mm DFN Packages

GaAs MMIC SP4T Non-Reflective Switch, DC - 3.5 GHz Features: RoHS Compliant Product Low Insertion Loss (2 GHz): 0.7 dB Single Positive Supply: VDD = +5V Integrated 2:4 TTL Decoder 16 Lead QSOP Package

10 W (40 dBm), 0.01 GHz to 2.8 GHz, GaN Power Amplifier Features: High small signal gain: 15.0 dB typical POUT: 40 dBm typical at PIN = 30 dBm High PAE: 55% typical at PIN = 30 dBm Frequency range: 0.01 GHz to 2.8 GHz across all frequencies VDD = 28 V at quiescent current of 100 mA Internal prematching Simple and compact external tuning for optimal performance 5 mm × 5 mm, 32-lead LFCSP package

Up to 1GHz SHARC+ DSP with 640KB L1, 1024KB Shared L2 SRAM, 400-Ball CSP_BGA Features:SHARC+ Core infrastructure 800MHz (max) or 1GHz (max) Core clock frequency 640KB on-chip Level 1 (L1) SRAM memory (with parity) increases low latency performance 32-bit, 40-bit & 64-bit floating point support 32-bit fixed point Byte, short-word, word, long-word addressedMemory 1024KB on-chip Level 2 (L2) SRAM with ECC protection - eliminates need for external memory in many use cases One Level 3 (L3) interface optimized for low system power, providing 16-bit interface to DDR3 (supporting 1.35 V capable DDR3L devices) SDRAM devices16-bit DDR/DDR3L Memory Controller 1.35V support for DDR3LAdvanced Hardware Accelerators Enhanced FIR/IIR offload engines running at Core clock frequency for added processing power Security Crypto Engines with OTPPowerful DMA SystemInnovative Digital Audio Interface (DAI) includes: 8x Full SPORT interfaces w/TDM & I2S modes 2x S/PDIF Rx/Tx, 8 ASRC pairs 4x Precision Clock Generators 28 BuffersOther Peripheral Connectivity / Interfaces: 2x Quad SPI, 1x Octal SPI MLB 3-pin 6x I2C,3x UARTs 2x Link Ports 10x General Purpose Timer, 1x General Purpose Counter 2x Watchdog Timers 4-ch 12bit Housekeeping ADCs 40 GPIO pins, 28 DAI pins Thermal SensorPackage 17mm x 17mm (0.8mm pitch) 400-ball CSP_BGAAdditional Features Security and Protection Crypto hardware accelerators Fast secure boot with IP protection Enhanced FIR and IIR accelerators running up to 1 GHz AEC-Q100 qualified for automotive applications

0.25 dB LSB, 7-Bit, Silicon Digital Attenuator, 0.1 GHz to 6.0 GHz Features: Attenuation range: 0.25 dB LSB steps to 31.75 dB Low insertion loss: 1.1 dB at 1.0 GHz 1.3 dB at 2.0 GHz Typical step error: less than ±0.1 dB Excellent attenuation accuracy: less than ±0.2 dB Low phase shift error: 6° phase shift at 1.0 GHz Safe state transitions High linearity 1 dB compression (P1dB): 31 dBm typical Input third-order intercept (IP3): 54 dBm typical RF settling time (0.05 dB final RF output): 250 ns Single supply operation: 3.3 V to 5.0 V ESD rating: Class 2 (2 kV human body model (HBM)) 24-lead, 4 mm × 4 mm LFCSP package: 16 mm2

Microwave Wideband Synthesizer with Integrated VCO Features: RF output frequency range: 62.5 MHz to 16,000 MHz Fractional-N synthesizer and integer-N synthesizer High resolution 39-bit fractional modulus Typical spurious fPFD: −90 dBc Integrated rms jitter: 38 fs (1 kHz to 100 MHz) Normalized phase noise floor: −234 dBc/Hz fPFD operation to 250 MHz Reference input frequency operation to 600 MHz Programmable divide by 1, 2, 4, 8, 16, 32, or 64 output 62.5 MHz to 8,000 MHz output at RF8x and RFAUX8x 8,000 MHz to 16,000 MHz output at RF16x Lock time approximately 3 ms with automatic calibration Lock time <30 μs with autocalibration bypassed, typical Analog and digital power supplies: 3.3 V typical VCO supply voltage: 3.3 V and 5 V RF output mute function 7mm × 7mm, 48-terminal LGA package

Microwave Wideband Synthesizer with Integrated VCO Features: Output frequency range: 800 MHz to 12.8 GHz Jitter = 18 fsRMS (Integration BW: 100 Hz to 100 MHz) Jitter = 27 fsRMS (ADC SNR Method) Wideband Noise Floor: -160 dBc/Hz @12 GHz PLL Specifications: -239 dBc/Hz: Normalized In-Band Phase Noise Floor -147 dBc/Hz: Normalized In-Band 1/f Noise Phase Detector Frequency up to 500 MHzReference Input Frequency up to 1 GHz Typical -100 dBc PFD spursReference to Output Delay Specifications: Part-to-Part Standard Deviation: 3 ps Temperature Drift: 0.03 ps/ Adjustment Step Size: <+/-0.1 ps Multi-chip Output Phase Alignment 3.3 V and 5 V Power supplies 7 mm x 7 mm 48 Lead LGA

Single Channel, 256-Position, I2C / SPI, Nonvolatile Digital Potentiometer Features: 10 kΩ and 100 kΩ resistance options Resistor tolerance: 8% maximum Wiper current: ±6 mA Low temperature coefficient: 35 ppm/°C Wide bandwidth: 3 MHz Fast start-up time < 75 μs Linear gain setting mode Single- and dual-supply operation Independent logic supply: 1.8 V to 5.5 V Wide operating temperature: −40°C to +125°C 3 mm × 3 mm LFCSP Qualified for automotive applications

Nonvolatile, Quad, 64-Position Digital Potentiometer Features: Nonvolatile Memory Preset Maintains Wiper Settings 4-channel independent programmable 64-position resolution EEMEM restore time: 140 μs typical Full monotonic operation 10 kΩ, 50 kΩ, and 100 kΩ terminal resistance See Data Sheet for Additional Information