12 Channel Multicell Battery Monitor with Addressable Interface, Generation 4 Features: Pin-Compatible Upgrade from the LTC6804 Measures Up to 12 Battery Cells in Series 1.2mV Maximum Total Measurement Error Stackable Architecture for High Voltage Systems Built-in isoSPI™ Interface 1Mb Isolated Serial Communications Uses a Single Twisted Pair, up to 100 Meters Low EMI Susceptibility and Emissions 290µs to Measure All Cells in a System Synchronized Voltage and Current Measurement 16-Bit ADC with Programmable Noise Filter Engineered for ISO 26262-Compliant Systems Passive Cell Balancing with Programmable Timer 5 General Purpose Digital I/O or Analog Inputs Temperature or other Sensor Inputs Configurable as an I2C or SPI master 4μA Sleep Mode Supply Current 48-Lead SSOP Package AEC-Q100 Qualified for Automotive Applications

Multi-Sensor High Accuracy Digital Temperature Measurement System Features: Directly Digitize RTDs, Thermocouples, Thermistors, and Diodes Single 2.85V to 5.25V Supply Results Reported in °C or °F 20 Flexible Inputs Allow Interchanging Sensors Automatic Thermocouple Cold Junction Compensation Built-In Standard and User-Programmable Coefficients for Thermocouples, RTDs and Thermistors Configurable 2-, 3- or 4-Wire RTD Configurations Measures Negative Thermocouple Voltages Automatic Burn Out, Short-Circuit and Fault Detection Buffered Inputs Allow External Protection Simultaneous 50Hz/60Hz Rejection Includes 10ppm/°C (max) Reference (I-Grade)

50 V, 130 kHz, 32.5 A, Robust, Over-The-Top Precision Op Amp Features: Ultrawide common-mode input range: −VS − 0.1 V to −VS + 70 V Wide power supply voltage range: +3 V to +50 V (to ±25 V for PSRR) Low power supply current: 32.5 μA (typical) Low input offset voltage: ±60 μV maximum Low input offset voltage drift: ±1 μV/°C maximum (B grade) Low input voltage noise 6 Hz typical 1/f noise corner 1000 nV p-p typical at 0.1 Hz to 10 Hz GBP: 130 kHz typical for fTEST = 250 Hz Slew rate: 0.1 V/μs typical at ΔVOUT = 4 V Low power supply current shutdown: 20 μA maximum Low input offset current: ±300 pA maximum Large signal voltage gain: 120 dB minimum for ΔVOUT = 3.5 V CMRR: 120 dB minimum at VCM = −0.1 V to +70 V PSRR: 123 dB minimum at VSY = +3 V to ±25 V Input overdrive tolerant with no phase reversal ±2 kV HBM and ±1.25 kV FICDM Wide temperature range: −55°C to +150°C (H grade) Shutdown feature available for single 6-lead TSOT and dual 10-lead LFCSP packages

50 V, 8 MHz, 1.5 mA per Channel, Robust, Over-The-Top, Precision Op Amps Features: Ultrawide common-mode range: −VS − 0.1 V to −VS + 70 V Wide power supply voltage range: (VSY): +3.15 V to +50 V (±25 V for PSRR) Low supply current: 1.5 mA per channel (typical) Low input offset voltage: ±40 μV maximum Low input offset voltage drift: ±0.4 μV/°C maximum Low voltage noise: 1/f noise corner: 6 Hz typical 150 nV p-p typical at 0.1 Hz to 10 Hz 7 nV/√Hz typical at 100 Hz (en) High speed GBP: 8 MHz typical Slew rate: 5.5 V/μs typical at ΔVOUT = 25 V Low power shutdown: 20 μA maximum Low input bias current: ±10 nA maximum Large signal voltage gain: 120 dB minimum CMRR: 118 dB, minimum PSRR: 123 dB, minimum Input overdrive tolerant with no phase reversal ±2 kV HBM and ±1.25 kV FICDM Wide temperature range: −55°C to +150°C (H grade)

OVP and EMI Protected, Precision, Low Noise and Bias Current Single Op Amp Features: Low offset voltage: 60 μV maximum at 25°C (8-lead and 14-lead SOIC) Low offset voltage drift: 1 μV/°C maximum (8-lead and 14-lead SOIC) Low input bias current: 1 nA maximum at 25°C Low voltage noise density: 8 nV/√Hz typical at 1 kHz Large signal voltage gain (AVO): 100 dB minimum over full supply voltage and operating temperature Input overvoltage protection to 32 V above and below the supply voltage rail Integrated EMI filter 70 dB typical rejection at 1000 MHz 90 dB typical rejection at 2400 MHz Rail-to-rail output swing Low supply current: 500 μA typical per amplifier Wide bandwidth Gain bandwidth product (AV = 100): 3.5 MHz typical Unity-gain crossover (AV = 1): 3.5 MHz typical −3 dB bandwidth (AV = 1): 6 MHz typical Dual-supply operation Specified at ±5 V to ±15 V, operates over ±2.5 V to ±18 V Unity-gain stable No phase reversal Long-term offset voltage drift (10,000 hours): 2 μV typical Temperature hysteresis: 2 μV typical

16-Bit, 15 MSPS, Module Data Acquisition Solution Features: Integrated fully differential ADC driver with signal scaling Wide input common range High common-mode rejection Single-ended to differential conversion 2.048 V input range with 4.096 V REFBUF Critical passive components 0.005% precision matched resistor array for FDA 9 mm × 9 mm, 0.8 mm pitch, 100-ball BGA package 4× footprint reduction versus discrete solution Low power, dynamic power scaling, power-down mode 143 mW typical at 15 MSPS Throughput: 15 MSPS, no pipeline delay INL: 0.4 LSB typical, 1 LSB maximum SINAD: 89 dB typical at 1 kHz THD: 115 dB at 1 kHz, 106 dB at 400 kHz Gain error: 0.005% FS typical Gain error drift: 1 ppm/C maximum On-board reference buffer with VCMO generation Serial LVDS interface Wide operating temperature range: 40C to +85C

10 GHz to 40 GHz, 1:4 Channel, 4 Frequency Multiplier/Filter Features: 4 input frequency multiplier with programmable harmonic filter Quad Differential Output PAs with independent Enable Control Input Frequency Range: 2.5 GHz to 10 GHz Output Frequency Range: 10 GHz to 40 GHz Input power: 20 dBm (50 ) Output power: 5 dBm differential (100 ) Harmonic rejection: 20 dBc to 40 dBc at all frequencies 3-Wire or 4-Wire SPI Control of all functions On-Chip Programmable State Machines for fast multiplier/filter and transmitter switching and control On-chip temperature sensor, output power detectors, and ADC DC power: 450 mW (2.5 V supply) 6 mm 6 mm, 40-terminal LGA package

Rail-to-Rail, Fast, Low Power 2.5 V to 5.5 V, Single-Supply TTL/CMOS Comparator Features: Fully specified rail-to-rail at VCC = 2.5 V to 5.5 V Input common-mode voltage from −0.2 V to VCC + 0.2 V Low glitch TTL-/CMOS-compatible output stage 40 ns propagation delay Low power 1 mW at 2.5 V Shutdown pin Programmable hysteresis Power supply rejection > 60 dB −40°C to +125°C operation

Microwave Wideband Synthesizer with Integrated VCO Features: Output frequency range: 800 MHz to 12.8 GHz Jitter = 18 fsRMS (Integration BW: 100 Hz to 100 MHz) Jitter = 27 fsRMS (ADC SNR Method) Wideband Noise Floor: -160 dBc/Hz @12 GHz PLL Specifications: -239 dBc/Hz: Normalized In-Band Phase Noise Floor -147 dBc/Hz: Normalized In-Band 1/f Noise Phase Detector Frequency up to 500 MHzReference Input Frequency up to 1 GHz Typical -100 dBc PFD spursReference to Output Delay Specifications: Part-to-Part Standard Deviation: 3 ps Temperature Drift: 0.03 ps/ Adjustment Step Size: <+/-0.1 ps Multi-chip Output Phase Alignment 3.3 V and 5 V Power supplies 7 mm x 7 mm 48 Lead LGA

DC to 9 GHz, Vector Signal Generator Features: DC-coupled, 50 matched output Up to 4.3 dBm output power, 9.5 dBm at 9 GHz DAC core update rate: 12.0 GSPS (guaranteed minimum) in 2 NRZ mode Wide analog bandwidth DC to 9.0 GHz in 2 NRZ mode (12.0 GSPS DAC update rate) 1.0 GHz to 8.0 GHz in mix mode (6.0 GSPS DAC update rate) DC to 4.5 GHz in NRZ mode (6.0 GSPS DAC update rate) Power dissipation of 4.88 W in 2 NRZ mode (10 GSPS DAC update rate) Bypassable datapath interpolation 2, 3, 4, 6, 8, 12, 16, 24 Instantaneous (complex) signal bandwidth 2.25 GHz with device clock at 5 GHz (2 interpolation) 1.8 GHz with device clock at 6 GHz (3 interpolation) Fast frequency hopping Integrated biCMOS buffer amplifier