0 Hz/DC to 13 GHz, 2.5 kV HBM ESD, SP4T, MEMS Switch with Integrated Driver Features: Fully operational down to 0 Hz/dc On resistance: 2.9 (maximum) Off leakage: 0.5 nA (maximum) −3 dB bandwidth 10.8 GHz (typical) for RF1, RF4 13 GHz (typical) for RF2, RF3 RF performance characteristics Insertion loss: 0.45 dB (typical) at 2.5 GHz Isolation: 24 dB (typical) at 2.5 GHz IP3: 67 dBm (typical) RF input power: 32 dBm (maximum) Actuation lifetime: 1 billion cycles (minimum) Hermetically sealed switch contacts On switching time: 75 µs (maximum) ESD HBM rating 5 kV for RF1 to RF4 and RFC pins 2.5 kV for all other pins Integrated driver removes the need for an external driver Supply voltage: 3.0 V to 3.6 V CMOS/LVTTL compatible Parallel and SPI Interface Independently controllable switches Switch is in an open state with no power supply present Requirement to avoid floating nodes on all RFx pins 5 mm × 4 mm × 1.45 mm, 24-lead LFCSP Operating temperature range: 0°C to 85°C

0 Hz/dc to 14 GHz, Single-Pole, Four-Throw MEMS Switch with Integrated Driver Features: Fully operational down to 0 Hz/dc On resistance: 2.9 Ω (maximum) Off leakage: 0.5 nA (maximum) −3 dB bandwidth 11 GHz (typical) for RF1, RF4 14 GHz (typical) for RF2, RF3 RF performance characteristics Insertion loss: 0.26 dB (typical) at 2.5 GHz Isolation: 24 dB (typical) at 2.5 GHz IIP3: 69 dBm (typical) RF power: 36 dBm (maximum) Actuation lifetime: 1 billion cycles (minimum) Hermetically sealed switch contacts On switching time: 75 μs (maximum) Integrated driver removes the need for an external driver Supply voltage: 3.0 V to 3.6 V CMOS-/LVTTL-compatible Parallel and SPI interface Independently controllable switches Switch is in an open state with no power supply present Requirement to avoid floating nodes on all RFx pins (see the Floating Node section in data sheet) 24-lead, 5 mm × 4 mm × 0.95 mm, LFCSP Operating temperature range: 0°C to 85°C

0 Hz/dc to 14 GHz, Single-Pole, Four-Throw MEMS Switch with Integrated Driver Features: Fully operational down to 0 Hz/dc On resistance: 2.9 Ω (maximum) Off leakage: 0.5 nA (maximum) −3 dB bandwidth 11 GHz (typical) for RF1, RF4 14 GHz (typical) for RF2, RF3 RF performance characteristics Insertion loss: 0.26 dB (typical) at 2.5 GHz Isolation: 24 dB (typical) at 2.5 GHz IIP3: 69 dBm (typical) RF power: 36 dBm (maximum) Actuation lifetime: 1 billion cycles (minimum) Hermetically sealed switch contacts On switching time: 75 μs (maximum) Integrated driver removes the need for an external driver Supply voltage: 3.0 V to 3.6 V CMOS-/LVTTL-compatible Parallel and SPI interface Independently controllable switches Switch is in an open state with no power supply present Requirement to avoid floating nodes on all RFx pins (see the Floating Node section in data sheet) 24-lead, 5 mm × 4 mm × 0.95 mm, LFCSP Operating temperature range: 0°C to 85°C

Compact, Precision Six Degrees of Freedom Inertial Sensor Features: Triaxial digital gyroscope with digital range scaling ±250°/sec, ±500°/sec, ±1000°/sec settings Axis to axis misalignment: ±0.05° Triaxial digital accelerometer dynamic range: ±18 g minimum Autonomous operation and data collection No external configuration commands required 205 ms typical power-on start-up time Factory calibrated sensitivity, bias, and axial alignment Calibration temperature range: −40°C to +85°C SPI-compatible Optional burst read sequence for fast data transfer Embedded temperature sensor Programmable operation and control Automatic and manual bias correction controls Bartlett window FIR length, number of taps Digital I/O: data ready, alarm indicator, general-purpose Alarms for condition monitoring Optional external sync input clock up to 1.1 kHz Single command self test Power supply voltage range: 3.15 V to 3.45 V 2000 g mechanical shock survivability Operating temperature range: −40°C to +105°C

Features:

Precision Wide-range (3 nA - 3 mA) High-Side Current Mirror Features: Accurately mirrors input current (1:1 ratio) over 6 decades - enables monitoring at low signal levels  Linearity 1% from 3 nA to 3 mA Stable mirror input voltage Voltage held 1 V below supply using internal reference or may be set externally providing greater flexibility in design Adjustable input current limit provides protection to the connected photodiode 2.7 V to 8 V single-supply operation Miniature 8-lead chip scale package (LFCSP 2 mm × 3 mm) saves valuable board space

Silicon SPDT SwitchReflective, 100 MHz to 44 GHz Features: Ultrawideband frequency range: 100 MHz to 44 GHz Reflective design Low insertion loss with impedance match 1.0 dB typical to 18 GHz 1.4 dB typical to 40 GHz 1.7 dB typical to 44 GHz Low insertion loss without impedance match 0.9 dB typical to 18 GHz 1.7 dB typical to 40 GHz 2.1 dB typical to 44 GHz High input linearity P1dB: 27.5 dBm typical IP3: 50 dBm typical High RF input power handling Through path: 27 dBm Hot switching: 27 dBm No low frequency spurious RF settling time (50% VCTRL to 0.1 dB of final RF output): 17 ns 12-terminal, 2.25 mm × 2.25 mm LGA package Pin compatible with the ADRF5025 low frequency cutoff version ADRF5024-EP Supports defense and aerospace applications (AQEC standard) Download ADRF5024-EP data sheet (pdf) Military temperature range (−55°C to +105°C) Controlled manufacturing baseline 1 assembly/test site 1 fabrication site Product change notification Qualification data available on request

0.5 dB LSB, 6-Bit, Silicon Digital Attenuator, 100 MHz to 40 GHz Features:Ultrawideband frequency range: 100 MHz to 40 GHz Attenuation range: 0.5 dB steps to 31.5 dB Low insertion loss with impedance match 2.1 dB up to 18 GHz 2.9 dB up to 26 GHz 4.8 dB up to 40 GHz Attenuation accuracy with impedance match ±(0.10 + 1.0% of attenuation state) up to 18 GHz ±(0.15 + 0.8% of attenuation state) up to 26 GHz ±(0.35 + 2.5% of attenuation state) up to 40 GHz Typical step error with impedance match ±0.18 dB up to 18 GHz ±0.23 dB up to 26 GHz ±0.51 dB up to 40 GHz High input linearity P0.1dB insertion loss state: 30 dBm P0.1dB other attenuation states: 27 dBm IP3: 50 dBm typical High RF input power handling: 27 dBm average, 30 dBm peak Tight distribution in relative phase No low frequency spurious signals SPI and parallel mode control, CMOS/LVTTL compatible RF settling time (0.1 dB of final RF output): 250 ns 24-terminal, 4 mm × 4 mm LGA package Pin compatible with ADRF5720, low frequency cutoff version

Low Frequency to 3 GHz, Dual VGA with Output Common-Mode and DC Offset Control Features: Dual, matched VGAs Maximum voltage gain: 18 dB Gain control attenuation range: 21 dB typical for TA = 25°C ±1 dB gain flatness bandwidth: 2.5 GHz typical IMD2 and IMD3 (1.5 V p-p output level) −56.8 dBc typical and −75 dBc typical, respectively, at VGN = 1.5 V, 980 MHz and 1000 MHz tones HD2 and HD3 (1.5 V p-p output level) −75 dBc typical and −73.7 dBc typical, respectively, at VGN = 1.5 V, fundamental at 500 MHz −55.9 dBc typical and −57.5 dBc typical, respectively, at VGN = 1.5 V, fundamental at 1 GHz Noise figure: 10.5 dB typical at maximum gain and at 500 MHz 14.8 dB at maximum gain and at 2 GHz Noise figure decreases dB for dB with gain backoff 100 differential input impedance ≤ 16 differential output impedance Programmable Output DC offset nominal range: ± 400 mV Output common-mode control: > ± 200 mV for VOCM = ±0.2 V Single- or dual-supply operation with power-down feature Single supply: VPOS = 5 V, VNEG = 0 V (nominal) Dual supply: VPOS = 3 V, VNEG = −2 V (nominal)

5.9 GHz to 23.6 GHz, Wideband, Microwave Upconverter Features: Wideband RF output frequency range: 5.9 GHz to 23.6 GHz Two upconversion modes Direct conversion from baseband I/Q to RF Single sideband upconversion from real IF LO input frequency range: 5.4 GHz to 14 GHz LO doubler for up to 28 GHz Matched 100 Ω balanced RF output, LO input, and IF input High impedance baseband inputs Sideband suppression and carrier feedthrough optimization Variable attenuator and power detector for Tx power control Programmable via 4-wire SPI interface 32-lead, 5 mm × 5 mm LFCSP microwave packaging