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Texas Instruments
DLP480REAAFXG
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Texas Instruments
BQ25887RGER
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Texas Instruments
BQ79606APHPRQ1
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Texas Instruments
DRV8876RGTR
|
Texas Instruments
ISO1430BDWR
|
Texas Instruments
ISO1430DWR
|
Texas Instruments
ISO1450BDW
|
Texas Instruments
ISO1450DW
|
Texas Instruments
TLV7031DBVR
|
Texas Instruments
TLV9062SIRUGR
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| Price |
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| RoHS |
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Y |
Y |
Y |
Y |
Y |
Y |
Y |
Y |
Y |
Y |
| Lead Status |
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Y |
Y |
See ti.com |
Y |
Y |
See ti.com |
See ti.com |
See ti.com |
Y |
Y |
| Array diagonal(in) |
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0.48 |
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| Chipset family |
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DLPC4430 |
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| Component type |
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DMD |
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| Display resolution(max) |
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WUXGA (1920x1200) |
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| Input frame rate(max)(Hz) |
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120 |
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| Micromirror array size |
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1920x1200 |
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| Micromirror pitch(mm) |
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0.0054 |
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| Operating temperature range(C) |
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0 |
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-40 to 105 |
-40 to 125 |
-40 to 125 |
-40 to 125 |
-40 to 125 |
-40 to 125 |
-40 to 125 |
-40 to 125 |
| Package area(mm^2) |
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718.06 |
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| Package size (L x W)(mm) |
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32.2 x 22.3 |
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| Package type |
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DLP-S410 |
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| Pin count |
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257 |
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| Rating |
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Catalog |
Catalog |
Automotive |
Catalog |
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Catalog |
Catalog |
Catalog |
Catalog |
Catalog |
| System brightness(max)(lm) |
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5500 |
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| TI.com inventory |
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199 |
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| Approx. price(US$) |
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145.2 | 1ku |
2.10 | 1ku |
5.49 | 1ku |
0.70 | 1ku |
2.60 | 1ku |
2.60 | 1ku |
3.00 | 1ku |
3.00 | 1ku |
0.15 | 1ku |
0.28 | 1ku |
| Control topology |
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Switch-Mode Boost |
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| Package Group |
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VQFN|24 |
HTQFP|48 |
HTSSOP|16,VQFN|16 |
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SOIC|16 |
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SOIC|16 |
SC70|5,SOT-23|5,X2SON|5 |
SOIC|8,SOT-23-THIN|8,TSSOP|8,VSSOP|10,VSSOP|8,WSON|8,X2QFN|10 |
| Absolute Vin (safety rating)(Max)((V)) |
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20 |
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| Number of series cells |
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2 |
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| Control interface |
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I2C |
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Hardware (GPIO) |
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| Features |
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ICO,IINDPM,Integrated ADC,Integrated FET,JEITA BAT Temp Monitoring (Thermistor Pin),OVP,Thermal Regulation,UVLO,VINDPM,Cell Balancing |
Cell Balancing,Integrated ADC,Multi-cell Support,Open wire detection,Over-temperature (OT),Over-voltage (OV),Requires separate MCU,Stackable (built-in interface),Temperature sense,Under-temperature (UT),Under-voltage (UV) |
Integrated Current Sensing,Current Sense Amplifier |
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Hysteresis,Small Size |
Cost Optimized,EMI Hardened,Shutdown,Small Size |
| Charge current(Max)(A) |
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2.2 |
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| Operating Vin(Min)(V) |
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3.9 |
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| Package size |
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mm2 |
mm2 |
mm2 |
mm2 |
mm2 |
mm2 |
mm2 |
mm2 |
mm2 |
| Battery charge voltage(Max)(V) |
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9.2 |
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| Operating Vin(Max)(V) |
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6.2 |
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| Cell chemistry |
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Li-Ion/Li-Polymer |
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| Battery charge voltage(Min)(V) |
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6.8 |
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| Battery over-voltage protection(Min)(V) |
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2 |
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| Communication interface |
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Differential Daisy Chain, UART |
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| Vin(Max)(V) |
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33 |
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| Typical operating current(Typ)(uA) |
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4200 |
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| Battery over-voltage protection(Max)(V) |
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5 |
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| Number of series cells(Max) |
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6 |
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| Number of series cells(Min) |
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3 |
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| RDS(ON) (HS + LS)(mOhms) |
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700 |
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| Number of full bridges |
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1 |
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| Peak output current(A) |
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3.5 |
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| Vs(Max)(V) |
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37 |
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6.5 |
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| Vs(Min)(V) |
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4.5 |
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1.6 |
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| Control mode |
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PWM,PH/EN,Independent 1/2-H PWM |
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| Fail safe |
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Idle,Open,Short |
Idle,Open,Short |
Idle,Open,Short |
Idle,Open,Short |
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| VCC1(Min)(V) |
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1.71 |
1.71 |
1.71 |
1.71 |
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| VCC2(Min)(V) |
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3 |
3 |
3 |
3 |
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| HBM ESD(kV) |
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30 |
30 |
30 |
30 |
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| Isolation rating(Vrms) |
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5000 |
5000 |
5000 |
5000 |
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| Surge voltage capability(Vpk) |
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10000 |
10000 |
10000 |
10000 |
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| VCC2(Max)(V) |
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5.5 |
5.5 |
5.5 |
5.5 |
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| Data rate(Max)(Mbps) |
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12 |
12 |
50 |
50 |
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| VCC1(Max)(V) |
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5.5 |
5.5 |
5.5 |
5.5 |
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| Integrated transformer driver |
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No |
No |
No |
No |
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| Duplex |
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Half |
Half |
Half |
Half |
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| DIN V VDE V 0884-10 working voltage(Vpk) |
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1500 |
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1500 |
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| CSA 60950-1 basic working(Vrms) |
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800 |
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800 |
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| Number of nodes |
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256 |
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256 |
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| CSA isolation rating(Vrms) |
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5000 |
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5000 |
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| CSA 61010-1 reinforced working(Vrms) |
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250 |
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250 |
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| Number of channels(#) |
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1 |
2 |
| Iq per channel(Max)(mA) |
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0.0009 |
0.75 |
| Vos (offset voltage @ 25 C)(Max)(mV) |
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8 |
1.6 |
| Output type |
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Push-Pull |
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| Input bias current (+/-)(Max)(nA) |
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0.002 |
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| Propagation delay time(uS) |
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3 |
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| Rail-to-rail |
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In,Out |
In,Out |
| Iq per channel(Typ)(mA) |
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0.000335 |
0.538 |
| VICR(Max)(V) |
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6.6 |
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| VICR(Min)(V) |
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0 |
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| GBW(Typ)(MHz) |
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10 |
| Output current(Typ)(mA) |
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50 |
| Offset drift(Typ)(uV/C) |
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0.53 |
| Slew rate(Typ)(V/us) |
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6.5 |
| CMRR(Typ)(dB) |
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103 |
| Output swing headroom (to positive supply)(Typ)(V) |
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-0.02 |
| Vn at 1 kHz(Typ)(nV/rtHz) |
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16 |
| Input common mode headroom (to positive supply)(Typ)(V) |
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0.1 |
| Input common mode headroom (to negative supply)(Typ)(V) |
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-0.1 |
| Architecture |
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CMOS |
| Output swing headroom (to negative supply)(Typ)(V) |
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0.02 |
| Total supply voltage(Min)(+5V=5, +/-5V=10) |
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1.8 |
| Total supply voltage(Max)(+5V=5, +/-5V=10) |
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5.5 |
| CMRR(Min)(dB) |
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80 |
| Input bias current(Typ)(pA) |
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20 |
