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TPS65295RJER

Texas Instruments TPS65295RJER

Price
RoHS Y Y See ti.com See ti.com Y Y See ti.com See ti.com Y Y
Lead Status Y Y See ti.com See ti.com See ti.com Y See ti.com See ti.com Y See ti.com
Step-up DC/DC converter 0 0
Step-down DC/DC controller 0 0
Step-down DC/DC converter 1 2
Vin(Max)(V) 5.5 5.5 18
Rating Automotive Automotive Catalog Catalog Catalog Automotive Catalog Catalog Catalog Catalog
Package size mm2 mm2 mm2 mm2 mm2 mm2 mm2 mm2
Vin(Min)(V) 2.8 2.8 4.5
Switching frequency(Max)(kHz) 2200
Vout(Max)(V) 3.36 3.36
Step-up DC/DC controller 0 0
Features Dynamic Voltage Scaling,Enable,Enable Pin,I2C Control,Over Current Protection,Power Good,Power Sequencing,Power Supply and System Monitoring,Spread-Spectrum Clock (SSC) Generation,Synchronous Rectification,Thermal Shutdown,UVLO Fixed Diagnostics,Dynamic Voltage Scaling,Eco-mode,Enable,Enable Pin,I2C Control,Over Current Protection,Power Good,Power Sequencing,Power Supply and System Monitoring,Spread-Spectrum Clock (SSC) Generation,Thermal Shutdown,UVLO Fixed Shutdown Shutdown Cost Optimized,EMI Hardened,Small Size 1.8-V compatible control inputs,Break-before-make,Fail-safe logic 1.8-V compatible control inputs,Break-before-make,Fail-safe logic Complete Solution
Configurability Factory programmable,Software configurable Factory programmable,Software configurable
Regulated outputs(#) 1 2
Switching frequency(Typ)(kHz) 2000 2000
Iout(Max)(A) 16 16
Vout(Min)(V) 0.6 0.6
Approx. price(US$) 2.75 | 1ku 2.75 | 1ku 9.80 | 1ku 9.80 | 1ku 1.25 | 1ku 1.134 | 1ku 0.34 | 1ku 0.99 | 1ku 1.14 | 1ku 1.70 | 1ku
Switching frequency(Min)(kHz) 1800
Iq(Typ)(mA) 0.0067 0.0067
Shutdown current(Typ)(uA) 1.4 1.4
Operating temperature range(C) -40 to 125 -40 to 125 -40 to 85 -40 to 85 -40 to 125 -40 to 125 -40 to 125 -40 to 125 -40 to 125
Package Group VQFN-HR|26 VQFN-HR|26 SO PowerPAD|8 SO PowerPAD|8 VQFN|20 SOIC|8,TSSOP|8 TSSOP|16,UQFN|16 TSSOP|16,UQFN|16 VQFN-HR|18
Processor name Jacinto 6+, TDA2+
Processor supplier Texas Instruments
LDO 0
Iq per channel(Max)(mA) 4 4 0.15
Offset drift(Typ)(uV/C) 1.6 1.6 0.5
Number of channels(#) 1 1 1 2 4 4
Rail-to-rail No No In,Out
Iq per channel(Typ)(mA) 3.2 3.2 0.12
Vos (offset voltage @ 25 C)(Max)(mV) 4 4 1.4
CMRR(Min)(dB) 100 100 104
Architecture FET FET CMOS
Total supply voltage(Max)(+5V=5, +/-5V=10) 180 16
Input bias current(Max)(pA) 100 100 1000
GBW(Typ)(MHz) 6.5 6.5 1.25
CMRR(Typ)(dB) 147 147 120
Total supply voltage(Min)(+5V=5, +/-5V=10) 12 2.7
Output current(Typ)(mA) 30 30 80
Slew rate(Typ)(V/us) 25 4.5
Slew Rate(Typ)(V/us) 25
Total Supply Voltage(Max)(+5V=5, +/-5V=10) 180
Total Supply Voltage(Min)(+5V=5, +/-5V=10) 12
Signaling rate(Max)(Mbps) 5
Supply voltage(s)(V) 6 to 24
Common mode voltage(V) -12 to 12
Isolated No
Low power mode Standby
HBM ESD(kV) -8 to 8
Bus fault voltage(V) -42 to 42 -58 to 58
IEC 61000-4-2 contact(+/- kV) -8 to 8
Protocols SBC,CAN LIN,SBC
Number of channels 1
Signaling rate(max)(Bits) 100000
Supply voltage(V) 5 to 36
TI.com inventory 25000
Vn at 1 kHz(Typ)(nV/rtHz) 33
VIH(Min)(V) 1.49
Supply current(Max)(uA) 1 1
OFF-state leakage current(Max)(A) 0.0009
Vdd(Max)(V) 5.5
Supply current(Typ)(uA) 0.009 0.009
ON-state leakage current(Max)(A) 0.002 0.00095
Ron(Typ)(Ohms) 2 2
COFF(Typ)(pF) 6
Bandwidth(MHz) 400 400
CON(Typ)(pF) 19 19
Supply range(Max) 5.5
VIL(Max)(V) 0.87
Vdd(Min)(V) 1.08
ESD CDM(kV) 0.75
Configuration 1 1
ESD HBM(kV) 2
Power supply type Single
Input/output continuous current(Max)(mA) 30 30
Ron(Max)(Ohms) 4.9 4.9
Power supply voltage - single(V) 1.2,1.8,2.5,3.3,5
DDR memory type DDR4
Vout VTT(Min)(V) 0.6
Regulator type Step-Down Module
Output VDDQ,VREF,VTT
Iout VTT(Max)(A) 1
Iout VDDQ(Max)(A) 8