PHOTODIODE PLANAR CHIP; No. of Pins:1Pins; Diode Case Style:Planar; Wavelength of Peak Sensitivity:930nm; Angle of Half Sensitivity :60 ; Dark Current:1.7 A; Operating Temperature Min:-40 C; Operating Temperature Max:125 C; MSL:- ;RoHS Compliant: Yes

LIGHT DEPENDENT RESISTOR; Voltage Rating:320V; Dark Resistance:1Mohm; Resistor Case Style:TO-8; Power Rating:250mW; Operating Temperature Min:-60 C; Operating Temperature Max:75 C; Packaging:Each; Product Range:-; No. of Pins:2 ;RoHS Compliant: No

PHOTODIODE ARRAY; No. of Pins:-; Diode Case Style:-; Angle of Half Sensitivity ±:-; Dark Current:3µA; Operating Temperature Min:-40°C; Operating Temperature Max:125°C; MSL:-; Active Area:76.76mm²; Diode Type:Photodiode; Open Circuit Voltage:0.4V; Operating Temperature Range:-40°C to +125°C; Peak Wavelength:930nm; Short Circuit Current:450µA; Wavelength Typ:930nm

PHOTODIODE, PLANAR CHIP; No. of Pins:1Pins; Diode Case Style:Planar; Wavelength of Peak Sensitivity:930nm; Angle of Half Sensitivity ±:60°; Dark Current:1µA; Operating Temperature Min:-40°C; Operating Temperature Max:105°C; MSL:-; Active Area:21.4mm²; Diode Type:Photodiode; External Depth:5.1mm; External Length / Height:5.1mm; Open Circuit Voltage:0.4V; Operating Temperature Range:-40°C to +105°C; Peak Wavelength:930nm; Sensitivity:0.55A/W; Short Circuit Current:1.2mA; Wavelength Typ:930nm

LDR 20MOHM 50mW NSL SERIES; Voltage Rating:100V; Dark Resistance:20Mohm; Resistor Case Style:TO-18; Power Rating:50mW; Operating Temperature Min:-60 C; Operating Temperature Max:75 C; Packaging:Each; Product Range:-; No. of Pins:2;RoHS Compliant: No

LDR 1MOHM 500MW NSL SERIES; Voltage Rating:320V; Dark Resistance:1Mohm; Resistor Case Style:TO-8; Power Rating:500mW; Operating Temperature Min:-60 C; Operating Temperature Max:75 C; Packaging:Each; Product Range:-; No. of Pins:2 ;RoHS Compliant: No

PHOTODIODE PLANAR CHIP; No. of Pins:1Pins; Diode Case Style:Planar; Wavelength of Peak Sensitivity:930nm; Angle of Half Sensitivity ±:60°; Dark Current:1µA; Operating Temperature Min:-40°C; Operating Temperature Max:105°C; Packaging:Each; Product Range:-; Automotive Qualification Standard:-; MSL:-; Active Area:21.4mm²; Breakdown Voltage Vbr:20V; Diode Type:Photodiode; External Depth:5.1mm; External Length / Height:5.1mm; Height:5.1mm; Open Circuit Voltage:0.4V; Operating Temperature Range:-40°C to +105°C; Peak Wavelength:930nm; Reverse Voltage Vr Max:20V; Sensitivity:0.55A/W; Short Circuit Current:1.2mA; Wavelength Typ:930nm

SILICON PHOTODIODE, 930NM, 125DEGC, SMD2;

PHOTODIODE PLANAR; No. of Pins:2Pins; Diode Case Style:Planar; Wavelength of Peak Sensitivity:930nm; Angle of Half Sensitivity ±:60°; Dark Current:1.7µA; Operating Temperature Min:-40°C; Operating Temperature Max:105°C; Packaging:Each; Product Range:-; Automotive Qualification Standard:-; MSL:-; Active Area:10.4mm²; Breakdown Voltage Vbr:20V; Diode Type:Photodiode; External Depth:5.1mm; External Length / Height:2.5mm; Height:2.5mm; Lead Length:130mm; Open Circuit Voltage:0.4V; Operating Temperature Range:-40°C to +105°C; Peak Wavelength:930nm; Reverse Voltage Vr Max:20V; Sensitivity:0.55A/W; Short Circuit Current:0.5mA; Wavelength Typ:930nm

OPTO SWITCH TRANSMISSIVE; Sensor Output:Phototransistor; Sensor Mounting:Panel / Chassis; Gap Width:3.8mm; Aperture Width:-; Forward Current If:50mA; Reverse Voltage Vr:-; Forward Voltage:-; Product Range:-; Automotive Qualification Standard:-; Collector Emitter Saturation Voltage Vce(on):0.4V; Current Ix:200nA; Gap Width:5.1mm; Input Current:50mA; No. of Channels:1Channels; On Current Ic:400µA; On Current Ice:100nA; Output Voltage:30V; Packaging:Each; Reverse Leakage Current Max:100µA; Voltage BVceo Min:30V; Voltage BVeco Min:5V; Voltage Vf Typ:2.4V