G3R40MT12J-TR
GeneSiC
Sic Mosfet, N-Ch, 1.2Kv, 66A, To-263-7; Mosfet Module Configuration:Single; Channel Type:N Channel; Continuous Drain Current Id:66A; Drain Source Voltage Vds:1.2Kv; No. Of Pins:7Pins; Rds(On) Test Voltage:18V; Power Dissipation:330W |Genesic Semiconductor G3R40MT12J-TR
GE04MPS06Q-TR
GeneSiC
Sic Schottky Diode, 650V, 4A, Qfn; Product Range:Mps Series; Diode Configuration:Single; Repetitive Peak Reverse Voltage:650V; Average Forward Current:4A; Total Capacitive Charge:-; Diode Case Style:Qfn; No. Of Pins:4 Pin |Genesic Semiconductor GE04MPS06Q-TR
G3F320MT12J-TR
GeneSiC
Sic Mosfet, N-Channel, 1.2Kv, To-263; Mosfet Module Configuration:-; Channel Type:N Channel; Continuous Drain Current Id:-; Drain Source Voltage Vds:1.2Kv; No. Of Pins:7Pins; Rds(On) Test Voltage:18V; Power Dissipation:- |Genesic Semiconductor G3F320MT12J-TR
GE12MPS06Q-TR
GeneSiC
Sic Schottky Diode, 650V, 12A, Qfn; Product Range:Mps Series; Diode Configuration:Single; Repetitive Peak Reverse Voltage:650V; Average Forward Current:12A; Total Capacitive Charge:-; Diode Case Style:Qfn; No. Of Pins:4 Pin |Genesic Semiconductor GE12MPS06Q-TR
G3F18MT12K
GeneSiC
Sic Mosfet, N-Channel, 1.2Kv, To-247; Mosfet Module Configuration:-; Channel Type:N Channel; Continuous Drain Current Id:-; Drain Source Voltage Vds:1.2Kv; No. Of Pins:4Pins; Rds(On) Test Voltage:-; Power Dissipation:- |Genesic Semiconductor G3F18MT12K
G3F45MT06D
GeneSiC
Sic Mosfet, N-Channel, 650V, To-247; Mosfet Module Configuration:-; Channel Type:N Channel; Continuous Drain Current Id:-; Drain Source Voltage Vds:650V; No. Of Pins:3Pins; Rds(On) Test Voltage:-; Gate Source Threshold Voltage Max:- |Genesic Semiconductor G3F45MT06D
G3F18MT12J-TR
GeneSiC
Sic Mosfet, N-Ch, 1.2Kv, 122A, To-263; Mosfet Module Configuration:Single; Channel Type:N Channel; Continuous Drain Current Id:122A; Drain Source Voltage Vds:1.2Kv; No. Of Pins:7Pins; Rds(On) Test Voltage:18V; Power Dissipation:526W |Genesic Semiconductor G3F18MT12J-TR
G3F40MT12J-TR
GeneSiC
Sic Mosfet, N-Ch, 1.2Kv, 59A, To-263; Mosfet Module Configuration:Single; Channel Type:N Channel; Continuous Drain Current Id:59A; Drain Source Voltage Vds:1.2Kv; No. Of Pins:7Pins; Rds(On) Test Voltage:18V; Power Dissipation:270W |Genesic Semiconductor G3F40MT12J-TR
G3F60MT06L-TR
GeneSiC
Sic Mosfet, N-Ch, 650V, 48A, Toll; Mosfet Module Configuration:Single; Channel Type:N Channel; Continuous Drain Current Id:48A; Drain Source Voltage Vds:650V; No. Of Pins:8Pins; Rds(On) Test Voltage:18V; Power Dissipation:185W |Genesic Semiconductor G3F60MT06L-TR
GA035XCP12-247
GeneSiC
IGBT SIC DIODE COPACK 1200V 35A TO247; DC Collector Current:35A; Collector Emitter Saturation Voltage Vce(on):1.2kV; Power Dissipation Pd:-; Collector Emitter Voltage V(br)ceo:-; No. of Pins:3; Operating Temperature Max:150 C ;RoHS Compliant: Yes
| Distributor | SKU | Stock | MOQ | 1 | 10 | 50 | 100 | 1,000 | 10,000 |
|---|---|---|---|---|---|---|---|---|---|
| element14 APAC | GA035XCP12-247 | 8 | 1 | * $97.18 | * $97.18 | * $97.18 | * $97.18 | * $97.18 | * $97.18 |
| Newark | GA035XCP12-247 | 0 | 510 | $0.00 | $0.00 | $0.00 | $0.00 | $0.00 | $0.00 |