Infrared emitting diodes (GaAlAs); Ta=25C; 17; -30+100

Phototransistor; Ta=25C; 70; -25+90

PhotointerrupterReflective type; Compact and Flat

Phototransistor; Ta=25°C; ±15; -30∼+100

Infrared emitting diodes (GaAlAs); Ta=25°C; ±53; -20∼+70

OPTO SWITCH SLOTTED; Sensor Output:Phototransistor; Sensor Mounting:Through Hole; Gap Width:2mm; Aperture Width:0.4mm; Forward Current If:50mA; Reverse Voltage Vr:5V; Forward Voltage:1.2V; Product Range:-; Automotive Qualification Standard:-; SVHC:No SVHC (20-Jun-2016); Collector Emitter Saturation Voltage Vce(on):0.4V; Collector Emitter Voltage V(br)ceo:30V; External Depth:4mm; External Length / Height:5.2mm; External Width:5mm; Fall Time tf:50µs; Forward Current If(AV):10mA; Gap Width:2mm; Height:5.2mm; Input Current:20mA; No. of Channels:1Channels; No. of Pins:4Pins; Operating Temperature Max:85°C; Operating Temperature Min:-25°C; Operating Temperature Range:-25°C to +85°C; Optocoupler Output Type:Phototransistor; Output Voltage:30V; Packaging:Each; Rise Time:50µs; Row Pitch:3.75mm

Photointerrupter Transmission type (Phototransistor output)

PhotointerrupterReflective type; Compact and Flat

IrDA-SIR 7pin Smart Beam SIR Transceiver Super slim Cellular Phone, 1.6x7x2.7

Phototransistor; Ta=25°C; ±65; -25∼+80