Leadless Ultra Small Plastic Package; 3 Solder Lands; Body 1.0 x 0.6 x 0.5 Mm, Marking Code-FB

Plastic Surface-Mounted Package; 3 Leads, Marking Code-*20(1)

NPN 5 GHz Wideband Transistor

TRANSISTOR NPN 9GHZ SOT-323; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:15V; Transition Frequency ft:9GHz; Power Dissipation Pd:500mW; DC Collector Current:120mA; DC Current Gain hFE:120hFE; RF Transistor Case:SOT-323; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (17-Dec-2015); Continuous Collector Current Ic:120mA; Continuous Collector Current Ic Max:120mA; Current Gain Hfe Max:250; Current Ic hFE:40mA; DC Current Gain Hfe Max:250; DC Current Gain Hfe Min:100; Gain Bandwidth ft Typ:9GHz; Hfe Min:100; Hfe Typ:120; Junction Temperature Tj Max:175°C; Noise Figure Typ:1.9dB; Packaging:Cut Tape; Pin Configuration:B(1) E(2) C(3); Power @ 1dB Gain Compression P1dB:21dBm; Termination Type:Surface Mount Device; Test Frequency:900MHz; Transistor Case Style:SOT-323; Voltage Vcbo:20V

NPN 8 GHz Wideband Transistor

wafer level chip-size package; 9 bumps; 1.66 1.71 0.6 mm

plastic rectangular-DIL-bent-SIL (reverse bent) power package; 27 leads (row spacing 2.54 mm)

200 MHz, 24 dB gain reverse amplifier

860 MHz, 34 dB gain push-pull amplifier

1 GHz, 25 dB gain high output power doubler